NSC CLC5523IN, CLC5523IMX, CLC5523IM Datasheet

Typical Application

Variable Gain Amplifier

Circuit

CLC5523
Low-Power,Variable Gain Amplifier

March 2000

Features

■

Low power: 135mW

■

250MHz, -3dB bandwidth

■

Slew rate 1800V/ms

■

Gain flatness 0.2dB @ 75MHz

■

Rise & fall times 2.0ns

■

Low input voltage noise 4nV/ÖHz

Applications

■

Automatic gain control

■

Voltage controlled filters

■

Automatic signal leveling for A/D

■

Amplitude modulation

■

Variable gain transimpedance

General Descriptions

The CLC5523 is a low power, wideband, DC-coupled, voltage­controlled gain amplifier. It provides a voltage-controlled gain
block coupled with a current feedback output amplifier. High
impedance inputs and minimum dependence of bandwidth on
gain make the CLC5523 easy to use in a wide range of
applications. This amplifier is suitable as a continuous gain
control element in a variety of electronic systems which benefit
from a wide bandwidth of 250MHz and high slew rate of
1800V/ms, with only 135mW of power dissipation.

Input impedances in the megaohm range on both the signal
and gain control inputs simplify driving the CLC5523 in any
application. The CLC5523 can be configured to use pin 3 as a
low impedance input making it an ideal interface for current
inputs. By using the CLC5523’s inverting configuration in which
RGis driven directly, inputs which exceed the device’s input
voltage range may be used.

The gain control input (VG), with a 0 to 2V input range, and a
linear-in-dB gain control, simplifies the implementation of AGC
circuits. The gain control circuit can adjust the gain as fast as
4dB/ns. Maximum gains from 2 to 100 are accurately and simply
set by two external resistors while attenuation of up to 80dB from
this gain can be achieved.

The extremely high slew rate of 1800V/ms and wide bandwidth
provides high speed rise and fall times of 2.0ns, with settling time
for a 2 volt step of only 22ns to 0.2%. In time domain applications
where linear phase is important with gain adjust, the internal cur­rent mode circuitry maintains low deviation of delay over a wide
gain adjust range.

CLC5523

Low-Power, Variable Gain Amplifier

© 2000 National Semiconductor Corporation http://www.national.com

Printed in the U.S.A.

+

-

CLC5523

R

f

V

o

V

in

R

g

2

3

4

1

V

G

R

L

5

-5V

8

+5V

6

7

25W

Pinout

DIP & SOIC

Frequency Response with Changes in V

30
20
10

0

-10

-20

-30

Magnitude (10dB/div)

-40

-50
1M

10M

Frequency (Hz)

g

100M

V

V

R

GND

G

IN

g

X1

­+

+V
I­V

-V

CC

O

CC

http://www.national.com 2

CLC5523 Electrical Characteristics

(VCC= ±5V, Rf= 1k, Rg= 100W,RL= 100W,VG= 2V; unless specified)

PARAMETERS CONDITIONS TYP MIN/MAX RATINGS UNITS NOTES
Ambient Temperature CLC5523I +25˚C25˚C -40 to 85˚C

FREQUENCY DOMAIN RESPONSE

-3dB bandwidth V

o

< 0.5V

pp

250 150 125 MHz

V

o

< 4.0V

pp

100 45 35 MHz

peaking DC to 200MHz (V

o

= 0.5Vpp) 0 0.8 2.0 dB

rolloff DC to 75MHz (V

o

= 0.5Vpp) 0.2 1.0 1.2 dB

linear phase deviation DC to 75MHz (V

o

= 0.5Vpp) 0.6 1.5 3.0 deg

gain control bandwidth V

in

= 0.2VDC, Vg= 1V

DC

95 70 60 MHz

TIME DOMAIN RESPONSE

rise and fall time 0.5V step 2.0 2.8 3.0 ns
overshoot 0.5V step 6.0 15 20 %
settling time to 0.2% 2V step 22 30 60 ns
non-inverting slew rate 4V step 700 450 400 V/ms
inverting slew rate 4V step 1800 1000 700 V/ms
gain control response rate 4 dB/nS 1

DISTORTION AND NOISE RESPONSE

2

nd

harmonic distortion 1Vpp, 5MHz -65 – – dBc

3

rd

harmonic distortion 1Vpp, 5MHz -80 – – dBc

2

nd

harmonic distortion 1Vpp, 10MHz -57 -52 -40 dBc

3

rd

harmonic distortion 1Vpp, 10MHz -75 -58 -54 dBc

input referred total noise V

g

= 2V 5 6 7 nV/ÖHz
input referred voltage noise 4 5.5 5.5 nV/ÖHz
R

g

referred current noise 36 50 60 pA/ÖHz

STATIC DC PERFORMANCE

output offset voltage 50 120 150 mV A
V

in

signal input

input voltage range R

g

open ±3.8 ±3.6 ±3.3 V

input bias current 3.0 8.0 16 mAA
input resistance 3.0 1.0 0.8 MW
input capacitance 1.0 1.5 1.7 pF
I

R

g

max

0° to 70°C 7.0 5.0 4.0 mA

I

R

g

max

-40° to 85°C 7.0 5.0 2.5 mA

signal ch. non-linearity SGNL V

o

= 2V

pp

0.04 0.1 0.2 %

gain accuracy* 0.3 0.5 0.9 dB A

V

g

gain input

input bias current 0.5 2.0 4.0 mA
input resistance 10 2.0 2.0 MW

input capacitance 1.0 1.5 1.5 pF
ground pin current 40 55 65 mA
power supply rejection ratio input-referred 57 50 46 dB
supply current R

L

= ¥ 13.5 15 16 mA A
output voltage range no load ±3.4 ±3.0 ±2.3 V
output voltage range R

L

= 100W ±3.0 ±2.5 ±2.3 V
output impedance 0.1 0.15 0.15 W
output current 80 65 50 mA
transistor count 146

*maximum gain is defined as Rf/R

g

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.

Absolute Maximum Ratings

supply voltage

±

7V
output current ±80mA
maximum junction temperature +150˚C
storage temperature range -65˚C to +150˚C
lead temperature (soldering 10 sec) +300˚C
ESD rating (human body model) TBD

Notes

A) I-level: spec is 100% tested at +25˚C.

1) See plot

“Gain Control Settling Time”

.

Ordering Information

Model Temp Range Description

CLC5523IN -40°C to +85°C 8-pin DIP
CLC5523IM -40°C to +85°C 8-pin Small outline
CLC5523IMX -40°C to +85°C 8-pin Small outline tape and reel

Contact the factory for other packages.

Pac kage Thermal Resistance

Package q

JC

q

JA

DIP (IN) 65°C/W 115°C/W
Small Outline (IM) 55°C/W 135°C/W

3 http://www.national.com

CLC5523 T ypical Perf ormance

(VG= +2V, Rf=1kW, Rg= 100W, RL= 100W,Vo= 0.5Vpp; unless specified)

Frequency Response (A

25

vmax

=10)

20
15
10

5
0

-5

-10

-15

Magnitude (5dB/div)

-20

-25

-30
1

10

Frequency (MHz)

Frequency Response vs. R

Magnitude

Phase

Magnitude (1dB/div)

1 10 100

L

RL = 50W

RL = 100W

Frequency (MHz)

PSRR & R

60

50

40

Magnitude (dB)

30

20

0.01 0.10 1 10 100

PSRR

R

out

out

Frequency (MHz)

Large Signal Frequency Response

V

= 1V

Inverting

Non-Inverting

Magnitude (1dB/div)

1

10

out

V

= 2V

out

V

= 4V

out

V

= 1V

out

pp

V

= 2V

out

pp

V

= 4V

out

pp

Frequency (MHz)

Gain (V/V) vs. V

10

9.0

8.0

7.0

6.0

5.0

4.0

Gain (V/V)

3.0

2.0

1.0

0

0 0.4 0.8 1.2 1.6 2.0

g

-40¡C

25¡C

85¡C

Vg Voltage (V)

100

100

pp

pp

pp

RL = 1k

Magnitude (5dB/div)

360

Phase (deg)

180

0

-180

-360

-450

100

10

R

out

(W)

1.0

0.1

0.01

Gain (dB)

Frequency Response (A

10

vmax

= 2)

5
0

-5

-10

-15

-20

-25

-30

-35

-40

-45
1

10

100

Frequency (MHz)

Frequency Response vs. R

Magnitude (1dB/div)

1 10 100

g

Rg = 500W

Rg = 10W

Rg = 33W

Rg = 100W

Frequency (MHz)

Feed-Through Isolation (VG = 0, 2)

A

= 100

40

A

= 10

vmax

20

vmax

0

-20

Gain (dB)

-40

-60

-80
1

10

100

Frequency (MHz)

Equivalent Input Noise

100

10

Voltage Noise
Current Noise

Input Voltage Noise (nVÖHz)

1

0.0001 0.001 0.01 0.1 1 10

Frequency (MHz)

Gain (dB) vs. V

20
10

0

-10

25¡C

-20

-30

-40

-50

-60
0 0.4 0.8 1.2 1.6 2.0

g

85¡C

-40¡C

Vg Voltage (V)

Magnitude (5dB/div)

1000

Input Current Noise (pAÖHz)

100

Input Voltage Noise (nVÖHz)

10

-0.5

Amplitude (0.5V/div)

-1.5

-2.5

Frequency Response (A

45

vmax

= 100)

40
35
30
25
20
15
10

5
0

-5

-10
1

10

100

Frequency (MHz)

Frequency Response vs. R

Magnitude (1dB/div)

1 10 100

Rf = 2k
Rf = 5k

f

Rf = 689W

Rf = 1k

Frequency (MHz)

Gain Flatness & Linear Phase Deviation

Vo = 2V

pp

Gain

Phase

Magnitude (0.1dB/div)

0 1530456075

Frequency (MHz)

Input Referred Total Noise

20
18
16
14
12
10

8
6
4
2

0 100 200 300 400 500

RG (W)

Large & Small Signal Pulse Response

2.5

Large

1.5

Small

0.5

Time (5ns/div)

Phase (0.5¡C/div)

0.5

0.4

Amplitude (0.1V/div)

0.3

0.2

0.1
0

-0.1

-0.2

-0.3

-0.4

-0.5

http://www.national.com 4

CLC5523 T ypical Performance

(VG= +2V, Rf=1kW, Rg= 100W,A

vmax

= 10; unless specified)

2nd Harmonic Distortion vs. Frequency

-30

Vo = 1V

-40

-50

-60

-70

-80

Distortion (dBc)

-90

-100

pp

2nd RL = 100W

2nd RL = 1k

1

10

Frequency (MHz)

Harmonic Distortion vs. Gain

-30

-50

-70

Distortion (dBc)

-90

-110

RL = 100

3rd = 10MHz

0.1 1

Vo = 100mV

2nd = 1MHz

3rd = 1MHz

Gain (Av)

Short Term Settling Time

0.2

0.1

0

(% Output Step)

o

-0.1

V

-0.2
1 100

Vo = 2Vstep

Time (ns)

DC Offset vs. Temperature

120

100

80

60

Output Offset (mV)

40

20

-60 -20 20 60 100 140

pp

2nd = 10MHz

10

10000

Input Bias Current

Output Offset Voltage

Temperature (¡C)

3rd Harmonic Distortion vs. Frequency

-40

Vo = 1V

1

pp

3rd RL = 100W

3rd RL = 1k

10

-50

-60

-70

-80

Distortion (dBc)

-90

-100

Frequency (MHz)

Input Harmonic Distortion (Av = 2)

60

VG = 1.04V

50

VG = 0.94V

= 100W

R

g

40

Distortion (dBc)

30

20

0 0.5 1.0 1.5 2.0

R

Input Voltage (V)

Long Term Settling Time

0.15

Vo = 2Vstep

0.1

0.05
0

-0.05

(% Output Step)

-0.1

o

V

-0.15

-0.2

0.001 0.01 0.1 1.0 10

Time (ms)

2.5

Input Bias Current (mA)

2.0

1.5

1.0

Intercept (dBm)

0.5

0

Harmonic Distortion vs. Output Voltage

-50

RL = 100

-60

-70

-80

-90

Distortion (dBc)

-100

-110
0 0.5 1 1.5 2

Differential Gain & Phase (NTSC)

0.05

= 250W

g

0

Gain (%)

-0.05

-0.1

-1.6 -0.8 0.8

Gain Control Settling Time

Amplitude (0.5V/div)

100

2nd Tone, 3rd Order Intermod Intercept

50

45

40

35

30

25

20

10 20 30 40 50 60 70 80

Frequency (MHz)

2nd = 10MHz

2nd = 1MHz

3rd = 10MHz

3rd = 1MHz

Output Voltage (Vpp)

Phase

0

DC Output Voltage

V

o

V

g

Time (10ns/div)

Gain

2.5

1.6

0.05

0

Phase (deg)

-0.05

-0.1

-0.15

-0.2

-0.25