NEC PA836TF Technical data

PRELIMINARY DATA SHEET

Silicon Transistor

μPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION

PACKAGE DRAWINGS (Unit:mm)

The μPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

•Low noise

Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

•High gain

Q1 : |S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 3.5 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

•6-pin thin-type small mini mold package

•2 different transistors on-chip (2SC5193, 2SC4959)

ON-CHIP TRANSISTORS

	Q1	Q2
3-pin small mini mold part No.	2SC4959	2SC5193

The μPA833TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

	PART NUMBER	QUANTITY	PACKING STYLE
	μPA836TF	Loose products	8-mm wide embossed tape.
		(50 pcs)	Pin 6 (Q1 Base), pin 5 (Q2
			Emitter), and pin 4 (Q2 Base)
	μPA836TF-T1	Taping products
			face perforated side of tape.
		(3 kpcs/reel)

				2.10±0.1
				1.25±0.1
				7 4 V		+0.1 −0.05
2.00±0.2	1.30	0.65 0.65	2 1		5 6	0.22
			3		4

0.60±0.1	0.45	0.1	0.13±0.05
		0 to

PIN CONFIGURATION (Top View)

B1 E2 B2

6 5 4

			Q1							Q2
	1						2			3
			C1				E1			C2
PIN CONNECTIONS
1.	Collector (Q1)									4.	Base (Q2)
2.	Emitter (Q1)									5.	Emitter (Q2)
3.	Collector (Q2)									6.	Base (Q1)

Caution is required concerning excess input, such as fromcstatielectricity, because the high-frequency

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12728EJ1V0DS00 (1st edition)

Date Published August 1997 N
Printed in Japan	©	1997

						μPA836TF
	ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
	PARAMETER	SYMBOL		RATING			UNIT
			Q1		Q2
	Collector to base voltage	VCBO	9		9		V
	Collector to emitter voltage	VCEO	6		6		V
	Emitter to base voltage	VEBO	2		2		V
	Collector current	IC	30		100		mA
	Total power dissipation	PT	150 in 1 element		150 in 1 element		mW
			200 in 2 elementsNote
	Junction temperature	Tj	150		150		°C
	Storage temperature	Tstg		−65 to +150			°C

Note 110 mW must not be exceeded for 1 element.

(1) Q1

ELECTRICAL CHARACTERISTICS

PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
Collector cutoff current	ICBO	VCB = 5 V, IE = 0				0.1	μA
Emitter cutoff current	IEBO	VEB = 1 V, IC = 0				0.1	μA
DC current gain	hFE	VCE = 3 V, IC = 10 mANote 1		75		150
Gain bandwidth product	fT	VCE = 3	V, IC = 10 mA, f = 2 GHz		12		GHz
Feedback capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2		0.4	0.7	pF
Insertion power gain	|S21e|2	VCE = 3	V, IC = 10 mA, f = 2 GHz	7	8.5		dB
Noise figure	NF	VCE = 3	V, IC = 3 mA, f = 2 GHz		1.5	2.5	dB

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

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μPA836TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
Collector cutoff current	ICBO	VCB = 5 V, IE = 0				0.1	μA
Emitter cutoff current	IEBO	VEB = 1 V, IC = 0				0.1	μA
DC current gain	hFE	VCE = 1 V, IC = 3 mANote 1		100		145
Gain bandwidth product (1)	fT	VCE = 1 V, IC = 3 mA, f = 2 GHz		4.0	4.5		GHz
Gain bandwidth product (2)	fT	VCE = 3 V, IC = 20 mA, f = 2 GHz			9.0		GHz
Feedback capacitance	Cre	VCB = 1 V, IE = 0, f = 1 MHzNote 2			0.75	0.85	pF
Insertion power gain (1)	|S21e|2	VCE = 1	V, IC = 3 mA, f = 2 GHz	2.5	3.5		dB
Insertion power gain (2)	|S21e|2	VCE = 3	V, IC = 20 mA, f = 2 GHz		6.5		dB
Noise figure (1)	NF	VCE = 1	V, IC = 3 mA, f = 2 GHz		1.7	2.5	dB
Noise figure (2)	NF	VCE = 3	V, IC = 7 mA, f = 2 GHz		1.5		dB

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank	FB
Marking	V47
hFE value of Q1	75 to 150
hFE value of Q2	100 to 145

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TYPICAL CHARACTERISTICS (TA = 25°C)

Q1

Total Power Dissipation vs. Ambient Temperature

(mW)			Free Air
	200	2 elements in total
			Q1 when using 1 element
PT
dissipation			Q1 when using
			2 elements
	100
Total power
	0	50	100	150
		Ambient temperature TA (°C)

Collector Current vs. DC Base Voltage

	50
		VCE = 3 V
IC (mA)	40
	30
current
	20
Collector
	10
	0
								0.5									1.0
					DC base voltage VBE (V)
	Collector Current vs. Collector to Emitter Voltage
	60
															500 μ A
(mA)IC	50
															400		μ A
	40
current															300 μ A
	30
Collector															200		μ A
	20
													IB =		100μ A
	10
	0	1			2			3		4			5				6
			Collector to emitter voltage VCE (V)

μPA836TF

Q2

Total Power Dissipation vs. Ambient Temperature

(mW)		2 elements in total		Free Air
	200
			Q2 when using 1 element
PT
dissipation			Q2 when using
			2 elements
	100
Total power
	0	50	100		150
		Ambient temperature TA (°C)

			Collector Current vs. DC Base Voltage
	100
	50		VCE = 1 V
(mA)	20
	10
IC	5
current	2
	1
Collector	0.5
	0.2
	0.1
	0.05
	0.02
	0.01
			0.5										1
	0

DC base voltage VBE (V)

	Collector Current vs. Collector to Emitter Voltage
	30
												200	μ A
(mA)IC	20											180	μ A
												160	μ A
current												140	μ A
												100	μ A
												120	μ A
Collector	10											80	μ A
												60	μ A
												40	μ A
												IB = 20 μ A
	0	1			2		3		4		5		6
			Collector to emitter voltage VCE (V)

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