NEC PA836TF Technical data

PRELIMINARY DATA SHEET

Silicon Transistor

µµµµ

PA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION PACKAGE DRAWINGS (Unit:mm)

The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

•Low noise

Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA

Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

•High gain

Q1 : |S

Q2 : |S

•6-pin thin-type small mini mold package

•2 different transistors on-chip (2SC5193, 2SC4959)

2

21e

|

= 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA

2

21e

|

= 3.5 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

ON-CHIP TRANSISTORS

1.30

2.00±0.2

0.60±0.1

0.65

0.45

2.10±0.1

1.25±0.1

V47

321

0 to 0.1

456

+0.1

−0.05

0.22

0.13±0.05

Q1 Q2

3-pin small mini mold part No. 2SC4959 2SC5193

The µPA833TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE

µ

PA836TF

µ

PA836TF-T1

Caution is required concerning excess input, such as from static electricity, because the high-frequency process is used for this device.

Loose products

(50 pcs)

Taping products

(3 kpcs/reel)

The information in this document is subject to change without notice.

8-mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), and pin 4 (Q2 Base) face perforated side of tape.

PIN CONFIGURATION (Top View)

B1

E2 B2

654

Q1 Q2

321

C1 E1 C2

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Document No. P12728EJ1V0DS00 (1st edition) Date Published August 1997 N Printed in Japan

1997©

µµµµ

PA836TF

ABSOLUTE MAXIMUM RATINGS (TA = 25

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Total power dissipation P

Junction temperature T Storage temperature T

Note

110 mW must not be exceeded for 1 element.

(1) Q1

CBO

CEO

EBO

C

T

j

stg

ELECTRICAL CHARACTERISTICS

°°°°

C)

RATING

Q1 Q2

99V 66V 22V

30 100 mA

150 in 1 element 150 in 1 element mW

200 in 2 elements

Note

150 150

−

65 to +150

UNITSYMBOLPARAMETER

°

C

°

C

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT

Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product f Feedback capacitance C Insertion power gain

CBO

EBO

FE

T

|

21e

S

VCB = 5 V, IE = 0 0.1 VEB = 1 V, IC = 0 0.1 VCE = 3 V, IC = 10 mA

Note 1

75 150 VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 10 mA, f = 2 GHz 7 8.5 dB

Note 2

0.4 0.7 pF

Noise figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

s, Duty cycle ≤ 2%

µ

method), with emitter connected to guard pin of capacitance meter.

µ

A

µ

A

2

µµµµ

PA836TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product (1) f Gain bandwidth product (2) f Feedback capacitance C Insertion power gain (1) Insertion power gain (2) Noise figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.7 2.5 dB Noise figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz 1.5 dB

CBO

EBO

FE

T

|

21e

S

|

21e

S

VCB = 5 V, IE = 0 0.1 VEB = 1 V, IC = 0 0.1 VCE = 1 V, IC = 3 mA

Note 1

100 145 VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz 9.0 GHz VCB = 1 V, IE = 0, f = 1 MHz

re

2

|

VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 dB

2

|

VCE = 3 V, IC = 20 mA, f = 2 GHz 6.5 dB

Note 2

0.75 0.85 pF

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank FB Marking V47 hFE value of Q1 75 to 150 hFE value of Q2 100 to 145

s, Duty cycle ≤ 2%

µ

3

µµµµ

PA836TF

TYPICAL CHARACTERISTICS (TA = 25

Q1 Q2

Total Power Dissipation vs. Ambient Temperature

200

(mW)

T

Q1 when using 1 element

100

Total power dissipation P

0 50 100 150

Ambient temperature T

Collector Current vs. DC Base Voltage

2 elements in total

50

V

CE

= 3 V

40

(mA)

C

30

20

Collector current I

10

0

0.5 1.0

DC base voltage V

Free Air

Q1 when using 2 elements

A

(°C)

BE

(V)

°°°°

C)

Total Power Dissipation vs. Ambient Temperature

Free Air

200

(mW)

T

2 elements in total

Q2 when using 1 element

Q2 when using 2 elements

100

Total power dissipation P

0

50 100 150

A

Ambient temperature T

(°C)

Collector Current vs. DC Base Voltage

100

V

CE

50

= 1 V

20 10

(mA)

5

C

2 1

0.5

0.2

0.1

Collector current I

0.05

0.02

0.01 0 0.5 1

DC base voltage V

BE

(V)

Collector Current vs. Collector to Emitter Voltage

60

µ

500 A

50

(mA)

C

40

30

µ

400 A

µ

300 A

µ

200 A

20

µ

I

B

Collector current I

10

0 246

135

Collector to emitter voltage V

= 100 A

CE

(V)

4

Collector Current vs. Collector to Emitter Voltage

30

µ

200 A

µ

180 A

µ

(mA)

20

C

10

Collector current I

160 A

µ

140 A

µ

120 A

µ

100 A

80 A

µ µ

60 A

µ

40 A

IB = 20 A

0 123456

Collector to emitter voltage V

CE

(V)

µ