NEC NEL2035F03-24 Datasheet
DATA SHEET
SILICON POWER TRANSISTOR
NEL2035F03-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2035F03-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
offers a high degree of reliability.
FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage VCBO 45 V
Collector to Emitter Voltage
Emitter to Base Voltage VEBO 3V
Collector to Emitter Voltage
Collector Current IC 14 A
Power Dissipation PT 79.5 W
Thermal Resistance Rth(j-c) 2.2 ˚C/W
Junction Temperature Tj 200 ˚C
Storage Temperature Tstg –65 to 150 ˚C
SYMBOL
VCER R = 10 Ω 30 V
VCEO 18 V
SPECIFIED CONDITION RATINGS UNIT
OUTLINE DIMENSIONS (Unit: mm)
2.8 ±0.2
φ
2 × 3.3 ±0.3
+0.05
–0.02
0.1
2.17 ±0.3
2
1
3
18.9 ±0.3
14.2 ±0.3
6.35 ±0.4
1 - EMITTER
2 - BASE
3 - COLLECTOR
6.35 ±0.4
14.35 ±0.4
4.67 ±0.4
1.53 ±0.3
Document No. P11584EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
NEL2035F03-24
PARAMETER
Collector to Emitter Cutoff ICES VCE = 24 V 10 mA
Current
Collector to Emitter Voltage
(Base to Emitter Registor = 10 Ω)
Collector to Emitter Voltage
(Open Base)
Collector to Base Voltage VCBO IC = 20 mA 45 85 V
(Open Emitter)
Emitter to Base Voltage VEBO IC = 25 mA 3 5.3 V
(Open Collector)
DC Forward Current Gain hFE VCE = 5 V, IC = 1 A 30 100 150
Output Capacitance Cob VCE = 24 V, f = 1 MHz 189 pF
SYMBOL
VCER IC = 20 mA, R = 10 Ω 30 85 V
VCEO IC = 20 mA 18 22 V
SPECIFIED CONDITION MIN. TYP. MAX. UNIT
2
NEL2035F03-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 100 mA, 30 33 W
VCC = 24 V, CLASS AB
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 2 W, Iq = 100 mA, 9 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 30 W PEP, –33 dBc
CLASS A OPERATION
PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT
Output Power PIdB f = 1.97 GHz, Iq = 1.5 A, 7 W
Collector Efficiency
Linear Gain GL f = 1.97 GHz, Pin = 0.1 W, Iq = 1.5 A, 10.7 dB
3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 5 W PEP, –33 dBc
η
c f = 1.97 GHz, Pout = PIdB, Iq = 100 mA, 40 50 %
VCC = 24 V, CLASS AB
VCC = 24 V, CLASS AB
VCC = 24 V, Iq = 100 mA, CLASS AB
VCC = 16 V, CLASS A
η
c f = 1.97 GHz, Pout = PIdB, Iq = 1.5 A, 30 %
VCC = 16 V, CLASS A
VCC = 16 V, CLASS A
VCC = 16 V, Iq = 1.5 A, CLASS A
3
NEL2035F03-24
Gain (dB)
11
10
f = 1970 MHz
Class AB, V
I
9
Class A, V
I
cc = 24 V
q = 100 mA
cc = 16 V
q = 1.5 A
8
7
6
50
40
η
c (%)
30
30 W
32 3624 2820
40 44
20
P
out (dBm)
–25
–30
–35
–40
IM (dBc)
–45
–50
f1 = 1970 MHz
IM3
IM5
IM7
f2 = 1970.1 MHz
Class AB, V
I
Class A, V
I
cc = 24 V
q = 100 mA
cc = 16 V
q = 1.5 A
–55
–60
22 26 30 34 38
42
46
Pout (dBm) ··· PEP
4
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