National Semiconductor MM54HC151, MM74HC151 Service Manual

MM54HC151/MM74HC151 8-Channel Digital Multiplexer
General Description
This high speed Digital multiplexer utilizes advanced silicon­gate CMOS technology. Along with the high noise immunity and low power dissipation of standard CMOS integrated cir­cuits, it possesses the ability to drive 10 LS-TTL loads. The MM54HC151/MM74HC151 selects one of the 8 data sourc­es, depending on the address presented on the A, B, and C inputs. It features both true (Y) and complement (W) out­puts. The STROBE input must be at a low logic level to enable this multiplexer. A high logic level at the STROBE forces the W output high and the Y output low.
The 54HC/74HC logic family is functionally as well as pin­out compatible with the standard 54LS/74LS logic family.
All inputs are protected from damage due to static dis­charge by internal diode clamps to V
Features
Y
Typical propagation delay data select to output Y: 26 ns
Y
Wide operating supply voltage range: 2–6V
Y
Low input current: 1 mA maximum
Y
Low quiescent supply current: 80 mA maximum (74HC)
Y
High output drive current: 4 mA minimum
November 1995
and ground.
CC
MM54HC151/MM74HC151 8-Channel Digital Multiplexer
Connection and Logic Diagrams
Dual-In-Line Package
TL/F/5313– 1
Top View
Order Number MM54HC151 or MM74HC151
Truth Table
Inputs Outputs
Select
CBA
XXX H L H L L L L D0 D0 L L H L D1 D1 L H L L D2 D2 L H H L D3 D3 H L L L D4 D4 H L H L D5 D5 H H L L D6 D6 H H H L D7 D7
HeHigh Level, LeLow Level, XeDon’t Care
D0, D1...D7
e
the level of the respective D input
Strobe
SYW
TL/F/5313– 2
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/F/5313
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
b
b
)
b
0.5 toa7.0V
1.5 to V
CC
0.5 to V
CC
g
g
b
g
65§Ctoa150§C
a
1.5V
a
0.5V
20 mA
25 mA
50 mA
Supply Voltage (V
)26V
CC
DC Input or Output Voltage 0 V
(V
IN,VOUT
)
Operating Temp. Range (TA)
MM74HC MM54HC
Input Rise or Fall Times
e
V
2.0V(tr,tf) 1000 ns
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
Power Dissipation (PD)
(Note 3) 600 mW S.O. Package only 500 mW
Lead Temp. (T
) (Soldering 10 seconds) 260§C
L
DC Electrical Characteristics (Note 4)
Symbol Parameter Conditions V
CC
A
e
T
25§C
Typ Guaranteed Limits
V
IH
Minimum High Level 2.0V 1.5 1.5 1.5 V Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
IL
Maximum Low Level 2.0V 0.5 0.5 0.5 V Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
OH
Minimum High Level V Output Voltage
e
VIHor V
l
IN
I
OUT
IL
s
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
IN
I
OUT
e
V
OL
Maximum Low Level V Output Voltage
IL
s
4.0 mA 4.5V 4.2 3.98 3.84 3.7 V
l
s
5.2 mA 6.0V 5.7 5.48 5.34 5.2 V
l
VIHor V
IL
s
20 mA 2.0V 0 0.1 0.1 0.1 V
l
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
IN
I
CC
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V I
**V
Maximum Input V Current
Maximum Quiescent V Supply Current I
g
and VILoccur at V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
OZ
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
IH
e
IN
e
IN
OUT
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
IL
s
4.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
s
5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
l
VCCor GND 6.0V
g
0.1
VCCor GND 6.0V 8.0 80 160 mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
Min Max Units
V
§
§
Units
b
40
b
55
eb
A
CC
a
85
a
125
55 to 125§C
g
1.0 mA
C C
2
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