Page 1
MM54HC03/MM74HC03 Quad 2-Input
Open Drain NAND Gate
MM54HC03/MM74HC03 Quad 2-Input Open Drain NAND Gate
January 1988
General Description
These NAND gates utilize advanced silicon-gate CMOS
technology to achieve operating speeds similar to LS-TTL
gates with the low power consumption of standard CMOS
integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the ability to drive 10
LS-TTL loads. The 54HC/74HC logic family is functionally
as well as pin-out compatible with the standard 54LS/74LS
logic family. All inputs are protected from damage due to
static discharge by internal diode clamps to V
ground.
As with standard 54HC/74HC push-pull outputs there are
diodes to both V
not be pulled above V
diode voltage above V
electrostatic protection.
and ground. Therefore the output should
CC
as it would be clamped to one
CC
. This diode is added to enhance
CC
CC
and
Connection and Logic Diagrams
Dual-In-Line Package
Features
Y
Typical propagation delay: 12 ns
Y
Wide power supply range: 2–6V
Y
Low quiescent current: 20 mA maximum (74HC Series)
Y
Low input current: 1 mA maximum
Y
Fanout of 10 LS-TTL loads
Top View
Order Number MM54HC03 or MM74HC03
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/5295
TL/F/5295– 1
TL/F/5295– 2
Page 2
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
DC Input Voltage (V
DC Output Voltage (V
Clamp Diode Current (I
DC Output Current, per pin (I
or GND Current, per pin (ICC)
DC V
CC
Storage Temperature Range (T
Power Dissipation (P
(Note 3) 600 mW
CC
IN
)
)
OUT
D
IK,IOK
)
)
)
)
OUT
STG
b
b
)
b
0.5 toa7.0V
1.5 to V
CC
0.5 to V
CC
g
g
b
g
65§Ctoa150§C
a
1.5V
a
0.5V
20 mA
25 mA
50 mA
S.O. Package only 500 mW
Lead Temp. (T
) (Soldering 10 seconds) 260§C
L
Supply Voltage (V
)26V
CC
DC Input or Output Voltage 0 V
(V
IN,VOUT
)
Operating Temp. Range (T
MM74HC
MM54HC
Input Rise or Fall Times
e
2.0V(tr,tf) 1000 ns
V
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
DC Electrical Characteristics (Note 4)
Symbol Parameter Conditions V
CC
A
e
T
25§C
Typ Guaranteed Limits
V
Minimum High Level 2.0V 1.5 1.5 1.5 V
IH
Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
Maximum Low Level 2.0V 0.5 0.5 0.5 V
IL
Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
I
LKG
I
IN
I
CC
Minimum Low Level V
OL
Output Voltage
Maximum High Level V
Output Leakage Current V
Maximum Input V
Current
Maximum Quiescent V
Supply Current I
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
OZ
**V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
g
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
and VILoccur at V
IH
e
V
IN
IH
s
I
20 mA 2.0V 0 0.1 0.1 0.1 V
l
l
OUT
e %
R
L
e
V
V
IN
IH
s
I
4.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
l
OUT
s
I
5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
l
l
OUT
e
VIHor V
IN
e
V
OUT
CC
e
VCCor GND 6.0V
IN
e
VCCor GND 6.0V 2.0 20 40 mA
IN
e
0 mA
OUT
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
6.0V 0.5 5 10 mA
IL
g
0.1
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
Min Max Units
)
A
b
b
40
55
A
eb
55 to 125§C
g
a
a
1.0 mA
CC
85
125
V
C
§
C
§
Units
2
Page 3
AC Electrical Characteristics V
CC
Symbol Parameter Conditions Typ
t
PZL,tPLZ
Maximum Propagation R
Delay
e
1KX 10 20 ns
L
AC Electrical Characteristics
e
V
2.0V to 6.0V, C
CC
Symbol Parameter Conditions V
t
PLZ,tPZL
t
THL
C
PD
C
IN
Note 5: CPDdetermines the no load dynamic power consumption, P
The power dissipated by R
Maximum Propagation R
Delay 4.5V 13 25 32 37 ns
Maximum Output 2.0V 30 75 95 110 ns
Fall Time 4.5V 8 15 19 22 ns
Power Dissipation (per gate) 20 pF
Capacitance (Note 5)
Maximum Input 5 10 10 10 pF
Capacitance
e
50 pF, t
L
is not included.
L
e
e
t
6 ns (unless otherwise specified)
r
f
e
1KX 2.0V 63 125 158 186 ns
L
e
5V, T
CC
e
A
T
25§C, C
Guaranteed
e
25§C
A
e
L
Limit
e
15 pF, t
e
t
6ns
r
f
Units
74HC 54HC
eb
T
40 to 85§CT
A
eb
A
55 to 125§C
Typ Guaranteed Limits
6.0V 11 21 27 32 ns
6.0V 7 13 16 19 ns
2
e
CPDV
D
faICCVCC, and the no load dynamic current consumption, I
CC
e
CPDVCCfaICC.
S
Units
3
Page 4
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number MM54HC03J or MM74HC03J
NS Package Number J14A
MM54HC03/MM74HC03 Quad 2-Input Open Drain NAND Gate
Molded Dual-In-Line Package (N)
Order Number MM74HC03N
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
Arlington, TX 76017 Email: cnjwge@tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408
Tel: 1(800) 272-9959 Deutsch Tel: (
Fax: 1(800) 737-7018 English Tel: (
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Fran3ais Tel: (
Italiano Tel: (
a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
a
49) 0-180-530 85 85 Tsimshatsui, Kowloon
a
49) 0-180-532 78 32 Hong Kong
a
49) 0-180-532 93 58 Tel: (852) 2737-1600
a
49) 0-180-534 16 80 Fax: (852) 2736-9960
Loading...