Page 1
MM54HC34/MM74HC34 Non-Inverter
General Description
The MM54HC34/MM74HC34 are logic functions fabricated
by using advanced silicon-gate CMOS technology which
provides the inherent benefits of CMOSÐlow quiescent
power and wide power supply range, but are functionally as
well as pin-out compatible with standard DM54LS/74LS devices. The MM54HC34/MM74HC34 feature low power dis-
Connection Diagram
Dual-In-Line Package
sipation and fast switching times. All inputs are protected
from static discharge by internal diodes to V
Features
Y
Fast switching: t
Y
High fanout:t10 LS loads
PLH,tPHL
e
10 ns (typ)
January 1988
and ground.
CC
MM54HC34/MM74HC34 Non-Inverter
Top View
Order Number MM54HC34 or MM74HC34
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/9389
TL/F/9389– 1
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Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
ICC
)
)
b
0.5V toa7.0V
b
1.5V to V
b
0.5V to V
b
65§Ctoa150§C
CC
CC
a
a
g
g
g
1.5V
0.5V
20 mA
25 mA
50 mA
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
DC VCCor GND Current, per pin (I
Storage Temperature Range (T
STG
)
Power Dissipation (PD)
Supply Voltage (V
DC Input or Output Voltage 0 V
(V
IN,VOUT
Operating Temp. Range (T
)26V
CC
)
MM74HC
MM54HC
Input Rise or Fall Times
)V
V
V
e
2.0V 1000 ns
CC
e
4.5V 500 ns
CC
e
6.0V 400 ns
CC
(t
r,tf
(Note 3) 600 mW
S.O. Package only 500 mW
Lead Temperature (T
(Soldering 10 seconds) 260
)
L
C
§
DC Electrical Characteristics (Note 4)
e
T
25§C
Symbol Parameter Conditions V
CC
A
Typ Guaranteed Limits
V
Minimum High Level 2.0V 1.5 1.5 1.5 V
IH
Input Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
Maximum Low Level 2.0V 0.5 0.5 0.5 V
IL
Input Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
Minimum High Level V
OH
Output Voltage
e
V
IN
IL
s
I
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
l
OUT
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
V
IN
IL
s
I
4.0 mA 4.5V 4.2 3.98 3.84 3.7 V
l
l
OUT
s
I
5.2 mA 6.0V 5.7 5.48 5.34 5.2 V
l
l
OUT
V
Maximum Low Level V
OL
Output Voltage
e
V
IN
IH
s
I
20 mA 2.0V 0 0.1 0.1 0.1 V
l
l
OUT
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
V
IN
IH
s
I
4.0 mA 4.5V 0.2 0.26 0.33 0.4 V
l
l
OUT
s
I
5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
l
l
OUT
I
IN
I
CC
Maximum Input V
Current
Maximum Quiescent V
Supply Current I
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature deratingÐplastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
OZ
**V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
and VILoccur at V
IH
e
VCCor GND 6.0V
IN
e
VCCor GND 6.0V 2.0 20 40 mA
IN
e
0 mA
OUT
g
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICCand
CC
b
g
0.1
12 mW/§C from 65§Cto85§C, ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
74HC 54HC
eb
T
40 toa85§CT
A
g
1.0
Min Max Units
)
A
b40a
b55a
eb
55 toa125§C Units
A
g
1.0 mA
CC
85§C
125§C
V
2
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AC Electrical Characteristics V
Symbol Parameter Conditions Typ
t
PHL,tPLH
Maximum Propagation
Delay
CC
e
5V, T
e
A
25§C, C
L
e
15 pF, t
e
e
t
r
f
Guaranteed
Limit
6ns
Units
10 ns
AC Electrical Characteristics V
Symbol Parameter Conditions V
t
PHL, tPLH
t
TLH,tTHL
C
PD
C
IN
Note 5: CPDdetermines the no load dynamic power consumption, P
ICC.
Minimum Propagation 2.0V 30 80 100 120 ns
Delay 4.5V 10 16 20 24 ns
Maximum Output Rise 2.0V 50 75 95 110 ns
and Fall Time 4.5V 10 75 19 22 ns
Power Dissipation (per gate)
Capacitance (Note 5)
Maximum Input
Capacitance
CC
CC
e
2.0V to 6.0V, C
e
T
25§C
A
e
L
50 pF, t
e
e
t
r
f
74HC 54HC
eb
T
40§Ctoa85§CT
A
6 ns (unless otherwise specified)
eb
55§Ctoa125§C Units
A
Typ Guaranteed Limits
6.0V 8 14 17 20 ns
6.0V 8 13 16 19 ns
26 pF
510 10 10 pF
2
e
CPDV
D
faICCVCC, and the no load dynamic current consumption, I
CC
e
S
CPDVCCf
a
3
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Physical Dimensions inches (millimeters)
MM54HC34/MM74HC34 Non-Inverter
Order Number MM54HC34J or MM74HC34J
NS Package Number J14A
14 Lead Molded Dip (N)
Order Number MM74HC34N
14 Lead Cerdip (J)
LIFE SUPPORT POLICY
NS Package Number N14A
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
Arlington, TX 76017 Email: cnjwge@tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408
Tel: 1(800) 272-9959 Deutsch Tel: (
Fax: 1(800) 737-7018 English Tel: (
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
a
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