National Semiconductor MM54HC30, MM74HC30 Service Manual
MM54HC30/MM74HC30 8-Input NAND Gate
MM54HC30/MM74HC30 8-Input NAND Gate
January 1988
General Description
This NAND gate utilizes advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates
with the low power consumption of standard CMOS integrated circuits. This device has high noise immunity and the
ability to drive 10 LS-TTL loads. The 54HC/74HC logic family is functionally as well as pin-out compatible with the standard 54LS/74LS logic family. All inputs are protected from
damage due to static discharge by internal diode clamps to
V
and ground.
CC
Connection and Logic Diagrams
Dual-In-Line Package
Top View
Order Number MM54HC30 or MM74HC30
Features
Y
Typical propagation delay: 20 ns
Y
Wide power supply range: 2– 6V
Y
Low quiescent current: 20 mA maximum (74HC Series)
Y
Low input current: 1 mA maximum
Y
Fanout of 10 LS-TTL loads
TL/F/5133– 1
YeABCDEFGH
TL/F/5133– 2
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
TL/F/5133
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (ICD)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
b
b
)
b
0.5 toa7.0V
1.5 to V
CC
0.5 to V
CC
g
g
b
g
65§Ctoa150§C
a
1.5V
a
0.5V
20 mA
25 mA
50 mA
Power Dissipation (PD)
(Note 3) 600 mW
DC Supply Voltage (V
)2 6 V
CC
DC Input or Output Voltage
(VIN,V
)0V
OUT
Operating Temp. Range (T
MM74HC
MM54HC
Input Rise/Fall Times
e
2.0V(tr,tf) 1000 ns
V
CC
e
V
4.5V 500 ns
CC
e
V
6.0V 400 ns
CC
S.O. Package only 500 mW
Lead Temp. (T
) (Soldering, 10 seconds) 260§C
L
DC Electrical Characteristics (Note 4)
e
T
25§C
Symbol Parameter Conditions V
CC
A
Typ Guaranteed Limits
V
Minimum High Level Input 2.0V 1.5 1.5 1.5 V
IH
Voltage 4.5V 3.15 3.15 3.15 V
6.0V 4.2 4.2 4.2 V
V
Maximum Low Level Input 2.0V 0.5 0.5 0.5 V
IL
Voltage** 4.5V 1.35 1.35 1.35 V
6.0V 1.8 1.8 1.8 V
V
Minimum High Level Output V
OH
Voltage
e
VIHor V
l
I
IN
OUT
IL
s
20 mA 2.0V 2.0 1.9 1.9 1.9 V
l
4.5V 4.5 4.4 4.4 4.4 V
6.0V 6.0 5.9 5.9 5.9 V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
I
IN
OUT
e
V
Maximum Low Level Output V
OL
Voltage
IL
s
4.0 mA 4.5V 4.2 3.98 3.84 3.7 V
l
s
5.2 mA 6.0V 5.7 5.48 5.34 5.2 V
l
V
IH
s
20 mA 2.0V 0 0.1 0.1 0.1 V
l
4.5V 0 0.1 0.1 0.1 V
6.0V 0 0.1 0.1 0.1 V
e
V
V
IN
IH
s
I
4 mA 4.5V 0.2 0.26 0.33 0.4 V
l
l
OUT
s
I
5.2 mA 6.0V 0.2 0.26 0.33 0.4 V
l
l
OUT
I
IN
I
CC
Maximum Input Current V
Maximum Quiescent Supply V
Current I
Note 1: Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
OZ
**V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
g
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
and VILoccur at V
IH
e
VCCor GND 6.0V
IN
e
VCCor GND 6.0V 2.0 20 40 mA
IN
e
0 mA
OUT
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
g
0.1
74HC 54HC
eb
T
40 to 85§CT
A
g
1.0
Min Max Units
)
A
b
b
40
55
eb
A
a
a
55 to 125§C
g
1.0 mA
CC
85
125
V
C
§
C
§
Units
2
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