These TRI-STATE buffers utilize advanced silicon-gate
CMOS technology and are general purpose high speed noninverting buffers. They possess high drive current outputs
which enable high speed operation even when driving large
bus capacitances. These circuits achieve speeds comparable to low power Schottky devices, while retaining the advantage of CMOS circuitry, i.e., high noise immunity, and
low power consumption. All three devices have a fanout of
15 LS-TTL equivalent inputs.
The MM54HC244/MM74HC244 is a non-inverting buffer
and has two active low enables (1G and 2G). Each enable
independently controls 4 buffers. This device does not have
Schmitt trigger inputs.
All inputs are protected from damage due to static discharge by diodes to V
and ground.
CC
Connection Diagram
Dual-In-Line Package
Features
Y
Typical propagation delay: 14 ns
Y
TRI-STATE outputs for connection to system buses
Y
Wide power supply range: 2 –6V
Y
Low quiescent supply current: 80 mA (74 Series)
Y
Output current: 6 mA
Top View
Order Number MM54HC244 or MM74HC244
TL/F/5327– 1
Truth Table
’HC244
1G1A1Y2G2A2Y
LLLLLL
LHHLHH
HLZHLZ
HHZHHZ
Hehigh level, Lelow level, Zehigh impedance
TRI-STATEÉis a registered trademark of National Semiconductor Corp.
C
1995 National Semiconductor CorporationRRD-B30M105/Printed in U. S. A.
TL/F/5327
Absolute Maximum Ratings (Notes1&2)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (VIN)
DC Output Voltage (V
OUT
)
Clamp Diode Current (IIK,IOK)
DC Output Current, per pin (I
OUT
)
DC VCCor GND Current, per pin (ICC)
Storage Temperature Range (T
STG
b
b
)
b
0.5 toa7.0V
CC
CC
a
a
g
g
g
1.5 to V
0.5 to V
b
65§Ctoa150§C
1.5V
0.5V
20 mA
35 mA
70 mA
Supply Voltage (V
DC Input or Output Voltage0V
(V
IN,VOUT
Operating Temp. Range (T
)26V
CC
)
MM74HC
MM54HC
Input Rise or Fall Times
(t
r,tf
)V
CC
V
CC
V
CC
e
2.0V1000ns
e
4.5V500ns
e
6.0V400ns
Power Dissipation (PD)
(Note 3)600 mW
S.O. Package only500 mW
Lead Temperature (T
)
L
(Soldering 10 seconds)260§C
DC Electrical Characteristics (Note 4)
SymbolParameterConditionsV
CC
A
e
T
25§C
TypGuaranteed Limits
V
Minimum High Level2.0V1.51.51.5V
IH
Input Voltage4.5V3.153.153.15V
6.0V4.24.24.2V
V
Maximum Low Level2.0V0.50.50.5V
IL
Input Voltage**4.5V1.351.351.35V
6.0V1.81.81.8V
V
Minimum High LevelV
OH
Output Voltage
e
VIHor V
l
IN
I
OUT
IL
s
20 mA2.0V2.01.91.91.9V
l
4.5V4.54.44.44.4V
6.0V6.05.95.95.9V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
l
IN
I
OUT
e
V
Maximum Low LevelV
OL
Output Voltage
IL
s
6.0 mA4.5V4.23.983.843.7V
l
s
7.8 mA6.0V5.75.485.345.2V
l
VIHor V
IL
s
20 mA2.0V00.10.10.1V
l
4.5V00.10.10.1V
6.0V00.10.10.1V
e
V
VIHor V
IN
I
l
OUT
I
l
OUT
I
IN
I
OZ
Maximum InputV
Current
Maximum TRI-STATE V
Output LeakageV
CurrentG
I
CC
Maximum QuiescentV
Supply CurrentI
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: Power Dissipation temperature derating Ð plastic ‘‘N’’ package:
Note 4: For a power supply of 5V
with this supply. Worst case V
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
I
OZ
** V
limits are currently tested at 20% of VCC. The above VILspecification (30% of VCC) will be implemented no later than Q1, CY’89.
IL
g
and VILoccur at V
IH
e
IN
e
IN
OUT
e
e
IN
OUT
10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5V. Thus the 4.5V values should be used when designing
IL
s
6.0 mA4.5V0.20.260.330.4V
l
s
7.8 mA6.0V0.20.260.330.4V
l
VCCor GND6.0V
VIH,orV
IL
e
VCCor GND
V
IH
6.0V
g
0.1
g
0.5
VCCor GND6.0V8.080160mA
e
0 mA
b
12 mW/§C from 65§Cto85§C; ceramic ‘‘J’’ package:b12 mW/§C from 100§Cto125§C.
e
5.5V and 4.5V respectively. (The VIHvalue at 5.5V is 3.85V.) The worst case leakage current (IIN,ICC, and
CC
74HC54HC
eb
T
40 to 85§CT
A
g
1.0
g
5
MinMaxUnits
)
A
b
b
40
55
A
eb
55 to 125§C
g
g
a
a
1.0mA
10mA
CC
85
125
V
C
§
C
§
Units
V
2
AC Electrical Characteristics MM54HC244/MM74HC244
e
e
e
5V, T
V
CC
A
25§C, t
e
t
6ns
r
f
SymbolParameterConditionsTyp
t
PHL,tPLH
t
PZH,tPZL
t
PHZ,tPLZ
Maximum PropagationC
Delay
Maximum Enable DelayR
to Active OutputC
Maximum Disable DelayR
from Active OutputC
e
45 pF1420ns
L
e
1kX1728ns
L
e
45 pF
L
e
1kX1525ns
L
e
5pF
L
Guaranteed
Limit
Units
AC Electrical Characteristics V
CC
e
SymbolParameterConditionsV
t
PHL,tPLH
t
PZH,tPZL
t
PHZ,tPLZ
t
TLH,tTHL
C
PD
C
IN
C
OUT
Note 5: CPDdetermines the no load dynamic power consumption, P
Maximum PropagationC
DelayC
Maximum Output EnableR
Time
Maximum Output DisableR
TimeC
Maximum Output2.0V607590ns
Rise and Fall Time4.5V121518ns
Power Dissipation(per buffer)
Capacitance (Note 5)G
Maximum Input5101010pF
Capacitance
Maximum Output10202020pF
Capacitance
e
50 pF2.0V58115145171ns
L
e
150 pF2.0V83165208246ns
L
e
C
50 pF4.5V14232934ns
L
e
C
150 pF4.5V17334249ns
L
e
C
50 pF6.0V10202529ns
L
e
C
150 pF6.0V14283542ns
L
e
1kX
L
e
C
50 pF2.0V75150189224ns
L
e
C
150 pF2.0V100200252298ns
L
e
C
50 pF4.5V15303845ns
L
e
C
150 pF4.5V30405060ns
L
e
C
50 pF6.0V13263238ns
L
e
C
150 pF6.0V17344351ns
L
e
1kX2.0V75150189224ns
L
e
50 pF4.5V15303845ns
L
e
V
IH
e
G
V
IL
D
2.0V-6.0V, C
T
CC
e
L
e
25§C
A
50 pF, t
e
e
t
6 ns (unless otherwise specified)
r
f
74HC54HC
eb
T
40 to 85§CT
A
A
eb
55 to 125§C
TypGuaranteed Limits
6.0V13263238ns
6.0V101315ns
12pF
50pF
2
e
CPDV
faICCVCC, and the no load dynamic current consumption, I
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or2. A critical component is any component of a life
systems which, (a) are intended for surgical implantsupport device or system whose failure to perform can
into the body, or (b) support or sustain life, and whosebe reasonably expected to cause the failure of the life
failure to perform, when properly used in accordancesupport device or system, or to affect its safety or
with instructions for use provided in the labeling, caneffectiveness.
be reasonably expected to result in a significant injury
to the user.
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