MOTOROLA MAC24A Technical data
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional 40 Amperes RMS
Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting systems,
heater controls, motor controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
• Gate Triggering Guaranteed in Four Modes
Order this document
by MAC224A/D
MAC224A
Series
TRIACs
40 AMPERES RMS
200 thru 800 VOL TS
MT2
MT1
G
MT2
MT1
MT2
G
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
Peak Repetitive Off-State Voltage
(TJ = –40 to 125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
On-State RMS Current (TC = 75°C)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing (t = 8.3 ms) I2t 500 A2s
Peak Gate Current (t p 2 µs) I
Peak Gate Voltage (t p 2 µs) V
Peak Gate Power (t p 2 µs) P
Average Gate Power (TC = 75°C, t p 8.3 ms) P
Operating Junction Temperature Range T
Storage Temperature Range T
Mounting Torque — 8 in. lb.
1. V
2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source (cont.)
DRM
such that the voltage ratings of the devices are exceeded.
is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.)
(TJ = 25°C unless otherwise noted.)
Rating
(1)
(2)
MAC224A4
MAC224A6
MAC224A8
MAC224A10
Symbol Value Unit
V
DRM
I
T(RMS
I
TSM
GM
GM
GM
G(AV)
J
stg
200
400
600
800
40 Amps
350 Amps
±2 Amps
±10 Volts
20 Watts
0.5 Watts
–40 to 125 °C
–40 to 150 °C
Volts
Motorola Thyristor Device Data
Motorola, Inc. 1999
1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
ELECTRICAL CHARACTERISTICS (T
Characteristic
Peak Blocking Current
(Rated V
Peak On-State Voltage
(ITM = 56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(–); MT2(+), G(–)
MT2(–), G(+)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+)
Gate Non-Trigger Voltage
(VD = Rated V
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+)
Holding Current (VD = 12 Vdc, Gate Open) I
Gate Controlled Turn-On Time
(VD = Rated V
Critical Rate of Rise of Off-State V oltage
(VD = Rated V
Critical Rate of Rise of Commutation Voltage
(VD = Rated V
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)
, Gate Open) TJ = 25°C
DRM
, TJ = 125°C, RL = 10 k)
DRM
, ITM = 56 A Peak, IG = 200 mA)
DRM
, Exponential Waveform, TC = 125°C)
DRM
, ITM = 56 A Peak, Commutating
DRM
TJ = 125°C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Symbol Min Typ Max Unit
I
DRM
V
TM
I
GT
V
GT
V
GD
H
t
gt
dv/dt — 50 — V/µs
dv/dt(c) — 5 — V/µs
θJC
θJA
—
—
— 1.4 1.85 Volts
—
—
—
—
0.2
0.2
— 30 75 mA
— 1.5 — µs
1 °C/W
60 °C/W
—
—
25
40
1.1
1.3
—
—
10
50
75
2.5
—
—
2
2
µA
mA
mA
Volts
Volts
°
FIGURE 1 – RMS CURRENT DERATING
125
120
115
110
105
100
95
90
85
80
75
C
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
*This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is
to be used at high sustained currents.
10015
I
, RMS ON-STATE CURRENT (AMPS)*
T(RMS)
30 35 40
25205.0
FIGURE 2 – ON-STATE POWER DISSIPATION
60
54
48
42
36
30
24
18
12
6.0
D
P , AVERAGE POWER DISSIPATION (WATTS)
0
02520
10
5.0 15
I
, RMS ON-STATE CURRENT (AMPS)*
T(RMS)
30 35 40
2 Motorola Thyristor Device Data
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