Motorola BAS40LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by BAS40LT1/D
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
MAXIMUM RATINGS (T
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range TJ, T
= 150°C unless otherwise noted)
J
Rating
Symbol Value Unit
DEVICE MARKING
BAS40LT1 = B1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(IR = 10 µA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
Forward Voltage
(IF = 0.1 mAdc)
Forward Voltage
(IF = 30 mAdc)
Forward Voltage
(IF = 100 mAdc)
= 25°C unless otherwise noted)
A
3
CATHODE
R
P
F
stg
40 Volts
225
1.8
–55 to +150 °C
ANODE
mW
mW/°C
V
1
(BR)R
C
I
V
V
V
Motorola Preferred Device
SCHOTTKY BARRIER DIODES
40 — Volts
T
R
F
F
F
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc
40 VOLTS
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAS40LT1
100
1.0
, FORWARD CURRENT (mA)
F
I
0.1
10
0 0.1
100
TA = 150°C
125°C
85°C
25°C
150°C
–40°C
0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)
–55°C
0.5
0.6 0.7
0.8
A)
µ
, REVERSE CURRENT (
R
I
0.001
10
1.0
0.1
0.01
125°C
85°C
25°C
0
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse
V oltage
3.5
3.0
2.5
2.0
25
, CAPACITANCE (pF)
T
C
1.5
1.0
0.5
0
5.0 10 15 40
0
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 3. T ypical Capacitance
30 35
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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