SEMICONDUCTOR TECHNICAL DATA
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by BAS40–06LT1/D
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc
1
ANODE
CATHODE/ANODE
3
2
CATHODE
Motorola Preferred Device
40 VOLTS
SCHOTTKY BARRIER DIODES
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Reverse Voltage V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range TJ, T
ELECTRICAL CHARACTERISTICS (T
Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company .
(TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
R
P
F
stg
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
(BR)R
T
R
F
F
F
40 Volts
225
1.8
–55 to +150 °C
40 — Volts
— 5.0 pF
— 1.0 µAdc
— 380 mVdc
— 500 mVdc
— 1.0 Vdc
mW
mW/°C
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAS40-06LT1
100
1.0
, FORWARD CURRENT (mA)
F
I
0.1
10
0 0.1
100
TA = 150°C
125°C
85°C
25°C
150°C
–40°C
0.2 0.3 0.4
VF, FORWARD VOLTAGE (VOLTS)
–55°C
0.5
0.6 0.7
0.8
A)
µ
, REVERSE CURRENT (
R
I
0.001
10
1.0
0.1
0.01
125°C
85°C
25°C
0
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. T ypical Forward Voltage Figure 2. Reverse Current versus Reverse
V oltage
3.5
3.0
2.5
2.0
25
, CAPACITANCE (pF)
T
C
1.5
1.0
0.5
0
5.0 10 15 40
0
VR, REVERSE VOLTAGE (VOLTS)
2520
Figure 3. T ypical Capacitance
30 35
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data