Motorola BAS21LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAS21LT1/D
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
Peak Forward Current I
Peak Forward Surge Current I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BAS21LT1 = JS
3
CATHODE
R
F
P
D
R
q
JA
P
D
R
q
JA
stg
250 Vdc
200 mAdc
625 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
1
ANODE
mW
mW/°C
mW
mW/°C
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol Min Max Unit
V
I
R
(BR)
V
F
C
D
t
rr
—
—
250 — Vdc
—
—
— 5.0 pF
— 50 ns
1.0
100
1000
1250
µAdc
mV
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BAS21LT1
820
Ω
+10 V
0.1 µF
2.0 k
100
I
t
t
r
0.1
µ
I
F
µ
H
F
p
10%
t
F
t
rr
t
50 Ω OUTPUT
PULSE
GENERATOR
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t
rr
V
R
R(peak)
90%
INPUT SIGNAL
is equal to 30 mA.
I
R
Figure 1. Recovery Time Equivalent Test Circuit
i
= 3.0 mA
R(REC)
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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