Motorola BAS16WT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA
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by BAS16WT1/D
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Motorola Preferred Device
MAXIMUM RATINGS (T
Rating
Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded
TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
Operating and Storage Junction
T emperature Range
= 25°C)
A
I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
DEVICE MARKING
A6
ELECTRICAL CHARACTERISTICS (T
Characteristic
Forward Voltage
(IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA)
Reverse Current
(VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 ) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
= 25°C unless otherwise noted)
A
3
CATHODE
Symbol Max Unit
75 V 200 mA 500 mA
200
1.6
–55 to +150 °C
0.625 °C/mW
P
TJ, T
R
R
R
D
stg
θJA
ANODE
mW
mW/°C
Symbol Min Max Unit
1
3
1
2
CASE 419–02, STYLE 2
SC–70/SOT–323
V
F
I
R
C
D
t
rr
QS 45 PC
V
FR
— — — —
— — —
2.0 pF
6.0 ns
1.75 V
715
866 1000 1250
1.0 50 30
mV
µA
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
BAS16WT1
10%
90%
V
F
10%
1 ns MAX
100 ns
20 ns MAX
t
t
t
if
rr
I
rr
Figure 1. Reverse Recovery Time Equivalent Test Circuit
DUT BAW62
500
V
C
V
CM
t
Qa
+
V
CM
C
500
DUTY CYCLE = 2%
D1 243 pF 100 K
DUT
OSCILLOSCOPE R C ≤ 7 pF
DUTY CYCLE = 2%
10 M
50
90%
V
f
400 ns
t
Figure 2. Recovery Charge Equivalent T est Circuit
120 ns
V
90%
10%
2 ns MAX
t
V
1 K
V
fr
450
DUT
DUTY CYCLE = 2%
50
Figure 3. Forward Recovery V oltage Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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