MITSUBISHI Nch POWER MOSFET
FY7AAJ-03A
HIGH-SPEED SWITCHING USE
FY7AAJ-03A
● 4V DRIVE
DSS ..................................................................................30V
● V
● r
DS (ON) (MAX) ............................................................. 30mΩ
D........................................................................................... 7A
● I
OUTLINE DRAWING Dimensions in mm
➄➇
6.0
4.4
➃➀
➁➂
➄➅➆➇
1.8 MAX.
SOURCE
GATE
➃
DRAIN
No-contact
➀
5.0
0.4
1.27
➄➅➆➇
➃
➁➂
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 10µH
Typical value
30
±20
7
49
7
1.8
7.2
1.7
–55 ~ +150
–55 ~ +150
0.07
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
ID = 3.5A, VGS = 4V
ID = 7A, VGS = 10V
ID = 7A, VDS = 10V
VDS = 10V , VGS = 0V, f = 1MHz
VDD = 15V, ID = 3.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.8A, VGS = 0V
Channel to ambient
IS = 1.8A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY7AAJ-03A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
22
34
0.154
10.0
760
270
125
15
25
50
40
0.75
—
40
—
±0.1
0.1
2.0
30
55
0.210
—
—
—
—
—
—
—
—
1.10
73.5
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
50
40
30
20
(TYPICAL)
VGS = 10V
C (°C)
8V 6V
TC = 25°C
Pulse Test
5V
4V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
2
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 10V
8V
6V
16
12
8
1
5V
tw = 100µs
1ms
10ms
100ms
DC
357
DS (V)
TC = 25°C
Pulse Test
4V
3V
2
2
10
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 1.7W
3V
4
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 1.7W
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY7AAJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
(V)
0.6
DS (ON)
0.4
VOLTAGE V
0.2
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
V
DS
= 10V
Pulse Test
40
(A)
D
30
20
10
DRAIN CURRENT I
ID = 15A
10A
5A
3A
GS
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
TC = 25°C
Pulse Test
40
(mΩ)
30
DS (ON)
20
10
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
10
–1
2
0
10
357 2
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
4
(S)
3
fs
2
1
10
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
TC = 25°C
75°C
125°C
VGS = 4V
1
10
357 2
D
(A)
10V
357
10
2
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
TCh = 25°C
3
f = 1MH
2
V
GS
= 0V
1
10
–1
10
2
357 2
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Ciss
Coss
Crss
Z
0
10
357 2
10
1
GS
(V)
357
DS
(V)
10
0
10
0
10
23457 234577
DRAIN CURRENT I
10
1
D
(A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10
7
t
d(off)
5
4
t
f
3
2
t
d(on)
1
10
t
r
7
5
4
3
TCh = 25°C
SWITCHING TIME (ns)
V
DD
= 15V
2
V
GS
= 10V
R
GEN
= RGS = 50Ω
0
2
10
10
0
23457 234577
10
1
DRAIN CURRENT ID (A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY7AAJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
10
TCh = 25°C
I
D
(V)
GS
= 7A
8
VDS = 15V
20V
25V
6
4
2
GATE-SOURCE VOLTAGE V
0
0246810
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
1
10
VGS = 10V
7
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
I
D
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
= 7A
5
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
VGS = 0V
Pulse Test
40
(A)
S
30
20
10
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
I
D
= 1mA
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
D = 1.0
(ch–a)
5
th
3
0.5
2
0.2
1
10
7
0.1
5
3
2
0
10
7
5
3
2
–1
10
–4
–3
23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
–2
23 57
23 57
10
PULSE WIDTH t
10
–1
23 57
10
0
23 57
w
(s)
10
P
DM
tw
D
1
T
tw
=
T
23 57
10
2
23 57
3
10
Sep.1998
Loading...