PRODUCT INFORMATION
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12604.11 1995-10-26
1320nm
1A353
High-Performance Duplex
Half-Duplex Communication
The diode chip is isolated from the case.
TO-46 Package With Lens
All dimensions in mm
This single-chip device operates as
both an Emitter and Detector, and
transmits data over a single fiber in
half-duplex mode—thus reducing
both fiber and component costs when
compared with traditional approaches.
RECEIVING MODE
Thermal Characteristics
Absolute Maximum Ratings
Fiber:
62.5/125
mm
Graded
Index
NA=0.275
Fiber:
62.5/125mm
Graded
Index
NA=0.275
Optical and Electrical Characteristics
(25°C Case Temperature)
EMITTING MODE
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance- Infinite Heat Sink R
thjc
200 8C/W
Thermal Resistance- No Heat Sink R
thja
500 8C/W
Temperature Coefficient- Optical Power dP/dT
j
-0.8 %/8C
Temperature Coefficient-Wavelength dl/dT
j
0.55 nm/8C
T emperature Coefficient-Responsivity dR/dT
j 0.2
%/8C
T emperature Coefficient-Dark Current dLd/dT
j5
%/8C
Note 1: Measured at the exit of 100 meters of fiber.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Fiber-Coupled Power P
fiber
50 55 mW IF=80 mA
(Fig.1,2,&3) (Table1) (Note 1)
Rise and Fall Time tr,t
f
4nsI
F
=80 mA
(10-90%)
(no bias)
Bandwidth f
c
50 MHz IF=80 mA
(3dBel)
Peak Wavelength l
p
1280 1320 1350 nm IF=80 mA
Spectral Width(FWHM) Dl 140 nm IF=80 mA
Forward Voltage (Fig.5) V
F
1.7 1.9 V IF=80 mA
Responsivity R 0.25 0.3 A/W VR=1V
(Fig.1,2) (Table2) l=1320nm
Rise and Fall Time tr,t
f
4nsV
R
=1V
(10-90%)
RL=50V
(no bias)
Bandwidth f
c
50 MHz VR=1V
RL=50V
Capacitance C 300 pF VR=1V, f=1MHz
Dark Current I
d
20 100 nA VR=1V
PARAMETER SYMBOL LIMIT
Storage Temperature T
stg
-55 to +1258C
Operating Temperature (derating: Fig.4) T
op
-55 to +1258C
Electrical Power Dissipation(derating: Fig.4) P
tot
160 mW
Continuous Forward Current (f<10 kHz) I
F
110 mA
Peak Forward Current (duty cycle<50%, f>1 MHz) I
FRM
150 mA
Reverse Voltage V
R
2.0 V
Soldering Temperature (2mm from the case for 10 sec) T
sld
2608C