PRODUCT INFORMATION
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11841.12 1994-09-20
880nm
1A212
High-Performance DUPLEX
Half-Duplex Communication
The diode chip is isolated from the case.
TO-46 Package With Lens
All dimensions in mm
This single-chip device operates as
both an Emitter and Detector, and
transmits data over a single fiber in
half- duplex mode—thus reducing
both fiber and component costs when
compared with traditional approaches.
RECEIVING MODE
Thermal Characteristics
Absolute Maximum Ratings
Fiber:
50/125mm
Graded
Index
NA=0.20
Fiber:
50/125mm
Graded
Index
NA=0.20
Optical and Electrical Characteristics
(25°C Case Temperature)
Note 1: Measured at the exit of 100 meters of fiber.
EMITTING MODE
PARAMETER SYMBOL LIMIT
Storage Temperature T
stg
-55 to +1258C
Operating Temperature (derating: Fig.4) T
op
-55 to +1258C
Electrical Power Dissipation(derating: Fig.4) P
tot
160 mW
Continuous Forward Current (f<10 kHz) I
F
80 mA
Peak Forward Current (duty cycle<50%, f>1 MHz) I
FRM
130 mA
Reverse Voltage V
R
2.0 V
Soldering Temperature (2mm from the case for 10 sec) T
sld
2608C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Fiber-Coupled Power P
fiber
25 55 mW IF=60 mA
(Fig.1,2,&3) (Table1) (Note 1)
Rise and Fall Time tr,t
f
710nsIF=60 mA
(10-90%)
(no bias)
Bandwidth f
c
50 MHz IF=60 mA
(3dBel)
Peak Wavelength l
p
870 880 890 nm IF=60 mA
Spectral Width(FWHM) Dl 50 nm IF=60 mA
Forward Voltage (Fig.5) V
F
1.7 1.9 V IF=60 mA
Responsivity R 0.10 0.15 A/W VR=1V
(Fig. 6,7,&8) (Table2) l=880 nm
Rise and Fall Time tr,t
f
710nsV
R
=1V
(10-90%)
RL=50V
(no bias)
Bandwidth f
c
50 MHz VR=1V
RL=50V
Capacitance C 30 pF VR=1V, f=1MHz
Dark Current I
d
510nAV
R
=1V
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance- Infinite Heat Sink R
thjc
200 8C/W
Thermal Resistance- No Heat Sink R
thja
500 8C/W
Temperature Coefficient- Optical Power dP/dT
j
-0.4 %/8C
Temperature Coefficient-Wavelength dl/dT
j
0.3 nm/8C
T emperature Coefficient-Responsivity dR/dT
j 0.2
%/8C
T emperature Coefficient-Dark Current dId/dT
j 2.5
%/8C