JRC NJG1304E Datasheet
NJG1304E
MEDIUM POWER AMPLIFIER GaAs MMIC
NJG1304E
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1304E is a GaAs MMIC designed mainly for driver
amplifier of PHS base station in Japan.
This is a variable gain type with 20dB dynamic range.
It features very low distortion and Pacp is less than –70dBc.
at 17dBm output power ,and enable low voltage and high
efficiency operation.
Small Plastic mold Package are adopted.
nFEATURES
lVoltage gain under low distortion
lLow voltage operation V
lLow current consumption IDD= 180mA typ. @f= 1.9GHz, P
lHigh gain Gain= 32dB
lLow distortion(ACP) P
lPower Dissipation 1000mW
lReduction of Parasitic oscillation
lInput and output internal matching circuit
lPackage EMP14
= +3.0V typ.
DD
= -70dBc typ. @f= 1.9GHz, P
ACP
= 17dBm
out
= 17dBm
OUT
nPIN CONFIGURATION
1
2
4
5
6
7
E Type
(Top View)
14
13
123
11
10
9
8
Pin Connection
1.GND
2.RF
in
3.V
GG1
4.V
CONT
5.V
GG2
6.GND
7.GND
8.GND
9.RF
OUT
10.V
DD2
11.GND
12.V
DD1
13.GND
14.GND
NJG1304E
nABSOLUTE MAXIMUM RATINGS
DD1,VDD2
GG1,VGG2
cont
cont
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Gate Voltage V
Gain Control Voltage V
Input Power P
Power Dissipation P
Operating Temperature T
Storage Temperature T
CONT
in
D
opr
stg
nELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL CONDITONS MIN TYP MAX UNITS
Operating Frequency freq V
Drain Voltage V
Gate Voltage V
Idle Current *1 I
Operating Current *1 I
Gate Current *2 I
Gain Control Terminal
Current
Gain Control Voltage V
DD1,2
GG1,2
I
CONT
CONT
idle
DD
GG
Small Signal Gain Gain V
Gain Flatness G
Gain Control Range G
Pout at 1dB
Compression point
Adjacent Channel
Leakage Power 1
Adjacent Channel
Leakage Power 2
Adjacent Channel
Leakage Power 1
Adjacent Channel
Leakage Power 2
Harmonics P
P
P
P
P
P
flat
CONT
-1dB
acp
acp
acp
acp
SP
Input VSWR VSWRiV
Load VSWR Tolerance -
(Ta=+25oC, Zs=Zl=50Ω)
V
GG1,VGG2
V
DD1,VDD2
V
DD1,VDD2
V
DD1,VDD2
=-0.9V 6.0 V
=-3.0V -4.0 V
=-3.0V -4.0 V
=-3.0V, V
GG1,VGG2
=-0.9V 3.0 dBm
At on PCB board 1000 mW
-30 ~ +85 °C
-40 ~ +150 °C
(Ta=+25 oC, Zs=Zl=50Ω)
=3.0V 1.89 - 1.92 GHz
DD1,2
2.9 3.0 5.3 V
V
=3.0V, I
DD1,2
V
=3.0V, No RF Signal 175 180 185 mA
DD1,2
V
=3.0V, P
DD1,2
V
=3.0V, P
DD1,2
V
=3.0V, P
DD1,2
-2.0<V
CONT
=170mA -1.25 -0.9 -0.6 V
idle
=21dBm 180 195 205 mA
out
=21dBm -150 -70 - uA
out
=21dBm
out
<0.0V
-5.0 -2.0 - uA
-2.0 - 0 V
V
V
I
idle
V
V
offset=600kHz
1
=3.0V, I
DD1,2
=3.0V, I
DD1,2
=-2~0V, V
CONT
=180mA
=3.0V 22 23 - dBm
DD1,2
=3.0V, P
DD1, 2
=180mA 29 32 35 dB
idle
=180mA 0 0.5 1.0 dB
idle
=3.0V
DD1,2
=17dBm
out
18 20 23 dB
- - -70 dBc
Pin;π/4 DQPSK
V
offset=900kHz
2
DD1, 2
=3.0V, P
=17dBm
out
- - -70 dBc
Pin; π/4 DQPSK
V
1
=3.0V,P
DD1, 2
(Adjust V
=13dBm
out
),offset=600kHz
- - -70 dBc
Pin=-7dBm; π/4 DQPSK
V
2
=3.0V,P
DD1, 2
(Adjust V
=21dBm
out
),offset=900kHz
- - -70 dBc
Pin=-7dBm; π/4 DQPSK
V
=3.0V, P
DD1,2
=3.0V - - 2.2
DD1,2
V
=3.0V, P
DD1,2
Load VSWR=4:1,All Phase
=21dBm - -35 -30 dBc
out
=21dBm
out
Parasitic Oscillation for
Fundamental Signal Level
:=<-60dBc
*1:V
*2:V
Terminal V
DD1
Terminal V
GG1
Terminal Total Current
DD2
Terminal Total Current
GG2
NJG1304E
nTYPICAL CHARACTERISTICS
Loading...