JRC NJG1107KB2 Datasheet

NJG1107KB2

1.5/1.9GHz LNA GaAs MMIC

PIN Connection

nGENERAL DESCRIPTION nPACKAGE OUTLINE

NJG1107KB2 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellular phone and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply.

This amplifier includes internal self-bias circuit and input

DC blocking capacitor.

An ultra small and thin package of FLP6 is adopted.

nFEATURES

lLow voltage operation +2.7V typ. lLow current consumption 3.0mA typ. lHigh small signal gain 17dB typ. @f=1.49GHz

15dB typ. @f=1.96GHz

lLow noise figure 1.2dB typ. @f=1.49GHz

1.2dB typ. @f=1.96GHz

lHigh Input IP3 -4.0dBm typ. @f=1.4900+1.4901GHz

-2.0dBm typ. @f=1.9600+1.9601GHz

lUltra small & ultra thin package FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)

NJG1107KB2

l This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)

nPIN CONFIGURATION

KB2 Type

(Top View)

4

5

6

AMP

3

1.RFout

2.GND

2

1

3.EXTCAP

4.GND

5.GND

6.RFin

Orientation Mark

Note: Specifications and description listed in this catalog are subject to change without prior notice.

- 1 -

NJG1107KB2

nABSOLUTE MAXIMUM RATINGS

(Ta=+25°C, Zs=Zl=50Ω)

PARAMETER SYMBOL CONDITIONS RATINGS UNIT

Drain Voltage V

DD

6.0 V Input Power Pin VDD=2.7V +15 dBm Power Dissipation P Operating Temp. T Storage Temp. T

D

opr

stg

450 mW

-40~+85 °C

-55~+125 °C

nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)

(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq1 1.47 1.49 1.51 GHz Drain Voltage V Operating Current I

DD

RF OFF - 3.0 3.8 mA

2.5 2.7 5.5 V

Small Signal Gain Gain 15.0 17.0 19.0 dB Gain Flatness G

flat

f=1.47~1.51GHz - 0.5 1.0 dB

Noise Figure NF - 1.2 1.4 dB Pout at 1dB Gain

Compression point Input 3rd Order

Intercept Point RF Input Port

VSWR RF Output Port

VSWR

P

-1dB

IIP3

VSWR

f=1.49+1.4901GHz RFin=-35dBm

i

o

-6.0 -2.0 - dBm

-6.0 -4.0 - dBm

- 1.6 2.2

1.6 2.2

nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)

(VDD=2.7V, f=1.96GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq2 1.89 1.96 1.99 GHz Drain Voltage V Operating Current I

DD

RF OFF - 3.0 3.8 mA

2.5 2.7 5.5 V

Small Signal Gain Gain 13.0 15.0 17.0 dB Gain Flatness G

flat

f=1.89~1.99GHz - 0.5 1.0 dB

Noise Figure NF - 1.2 1.4 dB Pout at 1dB Gain

Compression point Input 3rd order

Intercept Point RF Input Port

VSWR RF Output Port

VSWR

P

-1dB

IIP3

VSWR

f=1.96+1.9601GHz RFin=-30dBm

i

o

-3.0 +1.0 - dBm

-6.0 -2.0 - dBm

- 1.6 2.2

- 2 -

NJG1107KB2

nELECTRICAL CHARACTERISTICS 3 (1.8GHz Band)

(VDD=2.7V, f=1.76GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq3 1.75 1.76 1.78 GHz Drain Voltage V Operating Current I

DD

RF OFF - 3.0 3.8 mA

2.5 2.7 5.5 V

Small Signal Gain Gain - 16.0 - dB Gain Flatness G

flat

f=1.75~1.78GHz - 0.5 - dB Noise Figure NF - 1.2 - dB Pout at 1dB

Compression point Input 3rd order

Intercept Point RF Input Port

VSWR RF Output Port

VSWR

P

-1dB

IIP3

VSWR

f=1.76+1.7601GHz

RFin=-35dBm

i

o

- 1.1 - dBm

- -2.0 - dBm

- 1.6 - -

nELECTRICAL CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version)

(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT2)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq4 1.47 1.49 1.51 GHz Drain Voltage V Operating Current I

DD

RF OFF - 3.0 3.8 mA

2.5 2.7 5.5 V

Small Signal Gain Gain - 14.0 - dB Gain Flatness G

flat

f=1.47~1.51GHz - 0.5 - dB

Noise Figure NF - 1.2 - dB Pout at 1dB

Compression point Input 3rd order

Intercept Point RF Input Port

VSWR RF Output Port

VSWR

P

-1dB

IIP3

VSWR

f=1.49+1.4901GHz RFin=-35dBm

i

o

- 0.0 - dBm

- -3.0 - dBm

- 1.6 -

- 3 -

NJG1107KB2

nPIN CONFIGURATION

Pin Function Description

RF output and voltage supply pin. External matching circuits and a bypass capacitor

1 RFout

2,4,5 GND

3 EXTCAP An external bypass capacitor is required. (Please refer to “TEST CIRCUIT”) 6 RFin

is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer to “TEST CIRCUIT”) Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.

RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. (Please refer to “TEST CIRCUIT”)

- 4 -

NJG1107KB2

nTYPICAL CHARACTERISTICS (1.5GHz Band)

NF,Gain vs. frequency

2.6

2.2

1.8

NF (dB)

1.4

1

0.6

1.4 1.44 1.48 1.52 1.56 1.6 frequency (GHz)

(VDD=2.7V,IDD=3mA)

Pout vs. Pin

(VDD=2.7V,f=1.49GHz)

10

0

-10

Pout (dBm)

-20

P-1dB

+1.17dBm

20

16

12

8

4

0

10

5

0

-5

-10

-15

-20

-25

Gain (dB)

S21,S11,S22,S12 vs. frequency

25 20 15 10

5 0

-5

S21,S11,S22 (dB)

-10

-15 S12

-20

-25

0.5 1 1.5 2 2.5 frequency (GHz)

(VDD=2.7V,IDD=3mA)

S21

S11

S22

Pout, IM3 vs. Pin

(VDD=2.7V,IDD=3mA,f=1.49+1.4901GHz)

10

0

Pout

-10

-20

-30

-40

Pout,IM3 (dBm)

-50

-60

-70

IM3

IIP3

-3.15dBm

50 40 30 20 10 0

-10

-20

-30

-40

-50

S12 (dB)

-30

-40 -30 -20 -10 0

19

18.5

18

17.5

Gain (dB)

17

16.5

16

2.5 3 3.5 4 4.5 5 5.5

Pin (dBm)

Gain vs. V

VDD (V)

DD

(f=1.49GHz)

-30

-80

-40 -30 -20 -10 0

Pin (dBm)

NF, IDD vs. V

1.3

1.2

1.1

NF (dB)

1

0.9

0.8

2.5 3 3.5 4 4.5 5 5.5

VDD (V)

DD

(f=1.49GHz)

3.4

3.3

3.2

3.1

3

2.9

(mA)

DD

I

- 5 -

NJG1107KB2

nTYPICAL CHARACTERISTICS (1.5GHz Band)

Equations of OIP3 and IIP3

P-1dB vs. V

8

6

4

2

0

P-1dB (dBm)

-2

-4

-6

2.5 3 3.5 4 4.5 5 5.5 VDD (V)

DD

(f=1.49GHz)

Gain, IDD vs. Temperature

20

19

(VDD=2.7V, f=1.49GHz)

3.25

3

IIP3, OIP3 vs. V

5 4 3 2 1 0

-1

IIP3 (dBm)

-2

-3

-4

-5

2.5 3 3.5 4 4.5 5 5.5

(f=1.49+1.4901GHz, Pin=-35dBm)

DD

VDD (V)

NF, P-1dB vs. Temperature

2.4

2

(VDD=2.7V, f=1.49GHz)

20 19 18 17 16 15 14 13 12 11 10

2

1

OIP3 (dBm)

18

Gain (dB)

17

16

-40 -20 0 20 40 60 80 100

Temperature ( )

o

C

IIP3, OIP3 vs. Temperature

0

-1

-2

-3

-4

IIP3 (dBm)

-5

-6

(VDD=2.7V, f=1.49+1.4901GHz, Pin=-35dBm)

2.75

2.5

2.25

21

20

19

18

17

16

15

(mA)

DD

I

NF (dB)

OIP3 (dBm)

1.6

1.2

0.8

0.4

-40 -20 0 20 40 60 80 100 Temperature ( )

=3OIP

3IM-Pout×3

2

Gain-3OIP=3IIP

o

C

@ Pin=-35dBm

0

-1

-2

-3

P-1dB (dBm)

-7

-8

-40 -20 0 20 40 60 80 100

- 6 -

Temperature ( )

o

14

13

C

JRC NJG1107KB2 Datasheet

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