JRC NJG1103F1 Datasheet

NJG1103F1
1.5/1.9GHz LOW NOISE AMPLIFIER
NJG1103F1
6.LNAIN
GaAs MMIC
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1103F1 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellular phone and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point. (Best for 1.5GHz or 1.9GHz) Small package of MTP6-1 is adopted.
nFEATURES lLow voltage operation +2.7V typ.
lLow current consumption 3mA typ. lHigh small signal gain 16dB typ. @f=1.489GHz
14dB typ. @f=1.9GHz
lLow Noise Figure 1.2dB typ. @f=1.489GHz
1.4dB typ. @f=1.9GHz
lHigh Input IP3 -4dBm typ. @f=1.489+1.4891GHz
-3dBm typ. @f=1.9+1.9001GHz
lHigh Output IP3 +12dBm typ. @f=1.489+1.4891GHz
+11dBm typ. @f=1.9+1.9001GHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
1
2
3
Note: is package orientation mark.
F1 TYPE
(Top View)
6
Pin connection
1.LNAOUT
2.EXTIND
5
3.GND
4.GND
5.GND
4
- 1 -
NJG1103F1
nABSOLUTE MAXIMUM RATINGS
(Ta=+25°C, Zs=Zl=50)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V Input Power P Power Dissipation P Operating Temperature T Storage Temperature T
DD
opr
stg
in
D
VDD=2.7V +10 dBm
5.0 V
150 mW
-40~+85 °C
-55~+125 °C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.489GHz, Ta=+25°C, Zs=Zl=50, Circuit: Application 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq1 1.470 1.489 1.520 GHz Drain Voltage V Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 14.0 16.0 18.0 dB Gain Flatness G
flat
f=1.47~1.52GHz - 0.5 1.0 dB
Noise Figure NF - 1.2 1.4 dB Pout at 1dB Gain
Compression point Input 3rd Order
Intercept Point LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-6.0 -2.0 - dBm
IIP3 f=1.489+1.4891GHz -7.0 -4.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.9GHz, Ta=+25°C, Zs=Zl=50, Circuit: Application 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq2 1.89 1.90 1.92 GHz Drain Voltage V Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 12.0 14.0 16.0 dB Gain Flatness G
flat
f=1.89~1.92GHz - 0.5 1.0 dB
Noise Figure NF - 1.4 1.6 dB Pout at 1dB Gain
Compression point Input 3rd Order
Intercept Point LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-4.5 -0.5 - dBm
IIP3 f=1.9+1.9001GHz -6.0 -3.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
- 2 -
NJG1103F1
Pin vs. Pout,IM3
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NF,Gain vs.frequency
(VDD=2.7V,IDD=3.0mA)
2.6
2.4
2.2 2
1.8
1.6
NF(dB)
1.4
1.2 1
0.8
0.6
1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
NF
Gain
frequency(GHz)
20 18 16 14 12 10 8 6 4 2 0
Gain(dB)
S21,S11,S22,S12 vs. frequency
25 20 15 10
5 0
-5
-10
S21,S11,S22(dB)
-15
-20
-25
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
(VDD=2.7V,IDD=3.0mA)
S21
S12
frequency(GHz)
S22
S11
50 40 30 20 10 0
-10
-20
-30
-40
-50
S12(dB)
Pin vs. Pout
(VDD=2.7V,IDD=3.0mA,freq=1.489GHz)
10
5
0
-5
-10
-15
Pout(dBm)
-20
-25
-30
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Gain vs. V
( f=1.489GHz )
17
P-1dB=-1.1dBm
DD
(VDD=2.7V,IDD=3.0mA,f=1489+1489.1MHz)
10
0
-10
-20
-30
-40
Pout
IM3
Pout,IM3(dBm)
-50
-60
IIP3=-3.8dBm
-70
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
NF,IDD vs. V
DD
( f=1.489GHz )
1.2
3.4
16.5
16
15.5
Gain(dB)
15
14.5
14
2.5 3 3.5 4 4.5 5
VDD(V)
1.1
NF
1
NF(dB)
0.9
0.8
I
DD
0.7
2.5 3 3.5 4 4.5 5
VDD(V)
3.3
3.2
3.1
3
2.9
- 3 -
(mA)
DD
I
NJG1103F1
nTYPICAL CHARACTERISTICS (1.5GHz Band)
- 4 -
Loading...
+ 9 hidden pages