1.5/1.9GHz LOW NOISE AMPLIFIER
GaAs MMIC
nGENERAL DESCRIPTION nPACKAGE OUTLINE
NJG1103F1 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular
phone and Japanese PHS handsets.
This amplifier provides low noise figure, high gain
and high IP3 operated by single low positive power supply.
This amplifier can be tuned to wide frequency point.
(Best for 1.5GHz or 1.9GHz)
Small package of MTP6-1 is adopted.
nFEATURES
lLow voltage operation +2.7V typ.
lLow current consumption 3mA typ.
lHigh small signal gain 16dB typ. @f=1.489GHz
14dB typ. @f=1.9GHz
lLow Noise Figure 1.2dB typ. @f=1.489GHz
1.4dB typ. @f=1.9GHz
lHigh Input IP3 -4dBm typ. @f=1.489+1.4891GHz
-3dBm typ. @f=1.9+1.9001GHz
lHigh Output IP3 +12dBm typ. @f=1.489+1.4891GHz
+11dBm typ. @f=1.9+1.9001GHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
1
2
3
Note: is package orientation mark.
F1 TYPE
(Top View)
6
Pin connection
1.LNAOUT
2.EXTIND
5
3.GND
4.GND
5.GND
4
- 1 -
nABSOLUTE MAXIMUM RATINGS
(Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Input Power P
Power Dissipation P
Operating Temperature T
Storage Temperature T
DD
opr
stg
in
D
VDD=2.7V +10 dBm
5.0 V
150 mW
-40~+85 °C
-55~+125 °C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.489GHz, Ta=+25°C, Zs=Zl=50Ω, Circuit: Application 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq1 1.470 1.489 1.520 GHz
Drain Voltage V
Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 14.0 16.0 18.0 dB
Gain Flatness G
flat
f=1.47~1.52GHz - 0.5 1.0 dB
Noise Figure NF - 1.2 1.4 dB
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-6.0 -2.0 - dBm
IIP3 f=1.489+1.4891GHz -7.0 -4.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.9GHz, Ta=+25°C, Zs=Zl=50Ω, Circuit: Application 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq2 1.89 1.90 1.92 GHz
Drain Voltage V
Operating Current I
DD
DD
RF OFF - 3.0 3.8 mA
2.5 2.7 4.5 V
Small Signal Gain Gain 12.0 14.0 16.0 dB
Gain Flatness G
flat
f=1.89~1.92GHz - 0.5 1.0 dB
Noise Figure NF - 1.4 1.6 dB
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
LNAIN Port VSWR VSWR
LNAOUT Port VSWR VSWR
P
-1dB
-4.5 -0.5 - dBm
IIP3 f=1.9+1.9001GHz -6.0 -3.0 - dBm
i
o
- 2.0 3.0
- 2.0 3.0
- 2 -
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NF,Gain vs.frequency
(VDD=2.7V,IDD=3.0mA)
2.6
2.4
2.2
2
1.8
1.6
NF(dB)
1.4
1.2
1
0.8
0.6
1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
NF
Gain
frequency(GHz)
20
18
16
14
12
10
8
6
4
2
0
Gain(dB)
S21,S11,S22,S12 vs. frequency
25
20
15
10
5
0
-5
-10
S21,S11,S22(dB)
-15
-20
-25
0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
(VDD=2.7V,IDD=3.0mA)
S21
S12
frequency(GHz)
S22
S11
50
40
30
20
10
0
-10
-20
-30
-40
-50
S12(dB)
Pin vs. Pout
(VDD=2.7V,IDD=3.0mA,freq=1.489GHz)
10
5
0
-5
-10
-15
Pout(dBm)
-20
-25
-30
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
Gain vs. V
( f=1.489GHz )
17
P-1dB=-1.1dBm
DD
(VDD=2.7V,IDD=3.0mA,f=1489+1489.1MHz)
10
0
-10
-20
-30
-40
Pout
IM3
Pout,IM3(dBm)
-50
-60
IIP3=-3.8dBm
-70
-40 -35 -30 -25 -20 -15 -10 -5 0
Pin(dBm)
NF,IDD vs. V
DD
( f=1.489GHz )
1.2
3.4
16.5
16
15.5
Gain(dB)
15
14.5
14
2.5 3 3.5 4 4.5 5
VDD(V)
1.1
NF
1
NF(dB)
0.9
0.8
I
DD
0.7
2.5 3 3.5 4 4.5 5
VDD(V)
3.3
3.2
3.1
3
2.9
- 3 -
(mA)
DD
I
nTYPICAL CHARACTERISTICS (1.5GHz Band)
- 4 -