JRC NJG1102F1 Datasheet

NJG1102F1

LOW NOISE AMPLIFIER GaAs MMIC

6.LNAIN

nGENERAL DESCRIPTION nPACKAGE OUTLINE

NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.

nFEATURES

lLow voltage operation +2.7V typ.

lLow current consumption 3mA typ.
lHigh small signal gain 17dB typ. @f=820MHz
lLow noise figure 1.4dB typ. @f=820MHz
lHigh Input IP3 -3dBm typ. @f=820.0+820.1MHz
lHigh output IP3 14dBm typ. @f=820.0+820.1MHz
lPackage MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)

NJG1102F1

nPIN CONFIGURATION

1

2

3

Note: is package orientation mark.

F1 TYPE

(Top View)

6

Pin connection

1.LNAOUT

2.NC

5

3.GND

4.GND

5.GND

4

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NJG1102F1

nABSOLUTE MAXIMUM RATINGS

(Ta=25°C, Zs=Zl=50Ω)

PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage V
Input Power P
Power Dissipation P
Operating Temperature T

Storage Temperature T

DD

opr

stg

in

D

VDD=2.7V +10 dBm

5.0 V

150 mW

-40~+85 °C

-55~+125 °C

nELECTRICAL CHARACTERISTICS

(VDD=2.7V,f=820MHz,Ta=+25°C, Zs=Zl=50Ω)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq 800 820 1000 MHz
Drain Voltage V
Operating Current I

DD

DD

RF OFF - 3.0 4.0 mA

2.5 2.7 4.5 V

Small Signal Gain Gain 15.0 17.0 19.0 dB
Gain Flatness G

flat

fRF=810~885MHz

- 0.5 1.0 dB
Noise Figure NF - 1.4 1.6 dB
Pout at 1dB Gain

Compression point
Input 3rd Order

Intercept Point
RFIN Port VSWR VSWR
RFOUT Port VSWR VSWR

P

-1dB

-3.0 +1.0 - dBm

IIP3 f=820.0~820.1MHz -7.0 -3.0 - dBm

i

o

- 2.0 3.0

- 2.0 3.0

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NJG1102F1

nTYPICAL CHARACTERISTICS

NF,Gain vs. frequency

(VDD=2.7V,IDD=3mA)

3

2.8

2.6

2.4

2.2
2

NF(dB)

1.8

1.6

1.4

1.2
1

0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98 1

frequency(GHz)

Gain

NF

20
18
16
14
12
10
8
6
4
2
0

S21,S11,S22,S12 vs. frequency

25
20
15
10

5
0

Gain(dB)

-5

-10

S21,S11,S22(dB)

-15

-20

-25
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

(VDD=2.7V,IDD=3mA)

S21

S22

S11

S12

frequency(GHz)

50
40
30
20
10
0

-10

-20

-30

-40

-50

S12(dB)

Pin vs. Pout

(VDD=2.7V,IDD=3mA,f=820MHz)

10

5

0

-5

-10

-15

Pout(dBm)

-20

-25

-30

-40 -35 -30 -25 -20 -15 -10 -5 0

Pin(dBm)

Gain vs. V

( f=820MHz )

17.5

P-1dB=+0.8dBm

DD

Pin vs. Pout,IM3

(VDD=2.7V,IDD=3mA,f=820+820.1MHz)

10

0

-10

-20

-30

-40

Pout,IM3(dBm)

-50

-60

-70

-40 -35 -30 -25 -20 -15 -10 -5 0

NF,IDD vs. V

1.7

Pout

IM3

IIP3=-3.5dBm

Pin(dBm)

DD

( f=820MHz )

3

17

16.5

16

Gain(dB)

15.5

15

14.5

2.5 3 3.5 4 4.5 5

VDD(V)

1.6

1.5

NF(dB)

1.4

1.3

1.2

2.5 3 3.5 4 4.5 5

NF

VDD(V)

I

DD

2.9

2.8

(mA)

DD

I

2.7

2.6

2.5

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