INFINEON IPI60R520CP User Manual

IPI60R520CP

CoolMOSTM Power Transistor

Features

• Lowest figure-of-merit R

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

CoolMOS CP is designed for:

• Hard switching SMPS topologies

ON

x Q

g

1)

for target applications

Product Summary

V

@ T

DS

j,max

R

DS(on),max

Q

g,typ

@ Tj = 25°C 0.520

650 V

Ω

24 nC

PG-TO262

Type Package Marking

IPI60R520CP PG-TO262 6R520P

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv /dt ruggedness dv /dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

2)

AR

AR

2),3)

2),3)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=2.5 A, VDD=50 V

ID=2.5 A, VDD=50 V

V

V

GS

static V

AC (f >1 Hz)

P

tot

TC=25 °C

=100 °C

C

=0...480 V

DS

Value

6.8

4.3

17

166 mJ

0.25

2.5

50

±20

±30

66

A

A

V/ns

W

Operating and storage temperature

T

j

stg

-55 ... 150

°C

, T

Rev. 2.0 page 1 2008-02-15

Maximum ratings, at Tj=25 °C, unless otherwise specified

IPI60R520CP

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv /dt

2)

4)

I

S

I

S,pulse

T

C

=25 °C

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

Value

3.8

17

Values

A

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient

Soldering temperature,
wavesoldering only allowed at leads

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

T

sold

leaded - - 62

1.6 mm (0.063 in.)
from case for 10 s

- - 1.9 K/W

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

VDS=VGS, ID=0.34 mA

VDS=600 V, VGS=0 V,
T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=3.8 A,
T

=25 °C

j

V

=10 V, ID=3.8 A,

GS

T

=150 °C

j

600 - - V

2.5 3 3.5

--1µA

-10-

- - 100 nA

- 0.47 0.52

- 1.3 -

f =1 MHz, open drain - 1.3 -

Ω

Ω

Rev. 2.0 page 2 2008-02-15

IPI60R520CP

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

5)

related

Effective output capacitance, time

6)

related

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

C

t

t

t

t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=100 V,

V

GS

f =1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=400 V,

DD

V

=10 V, ID=3.8 A,

GS

=14.7Ω

R

G

- 630 - pF

-32-

-30-

-77-

-17-ns

-12-

-74-

-16-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q

Q

Q

V

gs

gd

g

plateau

V

=400 V, ID=3.8 A,

DD

V

=0 to 10 V

GS

-3-nC

-11-

-2431

- 4.7 - V

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

ISD=ID, di/dt≤400A/µs, V

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

DClink

j,max

=400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, IF=3.8 A,
T

=25 °C

j

VR=400 V, IF=IS,

di

/dt =100 A/µs

F

, Tj<T

, identical low side and high side switch.

jmax

- 0.8 1.2 V

- 230 - ns

- 2.5 - µC

-20-A

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS.

DSS.

Rev. 2.0 page 3 2008-02-15