INFINEON IPI60R125CP User Manual

IPI60R125CP

CoolMOSTM Power Transistor

Features

• Lowest figure-of-merit R

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies, for Server and Telecom

Type Package Marking

ONxQg

1)

for target applications

Product Summary

V

@ T

DS

j,max

R

DS(on),max

Q

g,typ

PG-TO220

PG-TO262

650 V

0.125

53 nC

Ω

IPI60R125CP PG-TO262 6R125P

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

MOSFET dv /dt ruggedness dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

2)

AR

AR

2),3)

2),3)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=11 A, VDD=50 V

ID=11 A, VDD=50 V

V

V

GS

static V

AC (f >1 Hz)

P

tot

, T

T

j

TC=25 °C

stg

=100 °C

C

=0...480 V

DS

Value

25

16

82

708 mJ

1.2

11

50

±20

±30

208

-55 ... 150

A

A

V/ns

W

°C

Rev. 2.0 page 1 2007-11-20

Maximum ratings, at Tj=25 °C, unless otherwise specified

IPI60R125CP

Parameter Symbol Conditions Unit

Continuous diode forward current

Diode pulse current

Reverse diode dv /dt

2)

4)

I

S

I

S,pulse

T

C

=25 °C

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

Value

16

82

Values

A

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient

Soldering temperature,
wavesoldering only allowed at leads

R

thJC

R

thJA

T

sold

leaded - - 62

1.6 mm (0.063 in.)
from case for 10 s

- - 0.6 K/W

- - 260 °C

Electrical characteristics, at T

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

=25 °C, unless otherwise specified

j

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

VDS=VGS, ID=1.1 mA

VDS=600 V, VGS=0 V,
T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=16 A,
T

=25 °C

j

V

=10 V, ID=16 A,

GS

T

=150 °C

j

f =1 MHz, open drain - 2.1 -

600 - - V

2.5 3 3.5

--2µA

-20-

- - 100 nA

- 0.11 0.125

Ω

- 0.30 -

Ω

Rev. 2.0 page 2 2007-11-20

IPI60R125CP

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Effective output capacitance, energy

5)

related
Effective output capacitance, time

6)

related

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

C

t

t

t

t

iss

oss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=100 V,

V

GS

f =1 MHz

V

=0 V, VDS=0 V

GS

to 480 V

=400 V,

V

DD

V

=10 V, ID=16 A,

GS

=3.3 Ω

R

G

- 2500 - pF

- 120 -

- 110 -

- 300 -

-15-ns

-5-

-50-

-5-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=400 V, ID=16 A,

DD

V

=0 to 10 V

GS

-12-nC

-18-

-5370

Gate plateau voltage

V

plateau

- 5.0 - V

Reverse Diode

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

1)

J-STD20 and JESD22

2)

Pulse width tp limited by T

3)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

4)

ISD=ID, di/dt<=200A/µs, V

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

j,max

DClink

=400V, V

V

SD

t

rr

Q

rr

I

rrm

peak<V(BR)DSS

VGS=0 V, IF=16 A,
T

=25 °C

j

VR=400 V, IF=IS,

di

/dt =100 A/µs

F

, Tj<T

, identical low side and high side switch.

jmax

oss

oss

- 0.9 1.2 V

- 430 - ns

-9-µC

-42-A

while VDS is rising from 0 to 80% V

while VDS is rising from 0 to 80% V

DSS.

DSS.

Rev. 2.0 page 3 2007-11-20