INFINEON IPD60R385CP User Manual
IPD60R385CP
CoolMOS® Power Transistor
Features
• Worldwide best R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
ds,on
in TO252
1)
for target applications
Product Summary
V
@ T
DS
j,max
R
DS(on),max
Q
g,typ
0.385
PG-TO252
650 V
Ω
17 nC
Type Package Ordering Code Marking
IPD60R385CP PG-TO252 SP000307381 6R385P
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=3.4 A, VDD=50 V
ID=3.4 A, VDD=50 V
V
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...480 V
DS
Value
9.0
5.7
27
227 mJ
0.3
3
50
±20
±30
83
A
A
V/ns
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Rev. 2.1 page 1 2008-02-29
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPD60R385CP
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
5.2
27
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.5 K/W
SMD version, device
Thermal resistance, junction ambient
Soldering temperature,
reflowsoldering
R
thJA
T
sold
on PCB, minimal
--62
footprint
SMD version, device
on PCB, 6 cm
5)
area
2
cooling
-35-
reflow MSL3 - - 260 °C
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
=25 °C, unless otherwise specified
j
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0.34 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=5.2 A,
T
=25 °C
j
V
=10 V, ID=5.2 A,
GS
T
=150 °C
j
f =1 MHz, open drain - 1.8 -
600 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.35 0.385
Ω
- 0.94 -
Ω
Rev. 2.1 page 2 2008-02-29
IPD60R385CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
6)
related
Effective output capacitance, time
7)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
=400 V,
V
DD
V
=10 V, ID=5.2 A,
GS
=3.3 Ω
R
G
- 790 - pF
-38-
-36-
- 300 -
-10-ns
-5-
-40-
-5-
0
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Q
gs
Q
g(th)
-4-nC
- 4.6 6.2
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
gd
sw
g
plateau
=400 V, ID=5.2 A,
V
DD
V
=0 to 10 V
GS
-6-
-1217
-1722
- 5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD≤ID, di/dt≤400A/µs, V
5)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
DClink
j,max
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
PCB is without blown air.
6)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
7)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
VGS=0 V, IF=5.2 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, Tj<T
, identical low side and high side switch
jmax
- 0.9 1.2 V
- 260 - ns
- 3.1 - µC
-24-A
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
DSS.
DSS.
Rev. 2.1 page 3 2008-02-29
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