INFINEON IPD20N03L, IPU20N03L User Manual

OptiMOS Buck converter series

IPD20N03L
IPU20N03L

Feature

• N-Channel

• Logic Level

• Low On-Resistance R

• Excellent Gate Charge x R

• Superior thermal resistance

DS(on)

product (FOM)

DS(on)

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Ideal for fast switching buck converters

Type Package Ordering Code

IPD20N03L P- TO252 -3-11 Q67042-S4050
IPU20N03L P- TO251 -3-1 Q67042-S4106

Product Summary

V

DS

R

DS(on)

I

D

P- TO251 -3-1 P- TO252 -3-11

30 V
20 mΩ
30 A

Marking

20N03L
20N03L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

I

D

30

A

30

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=15A, VDD=25V, RGS=25Ω

Repetitive avalanche energy, limited by T

2) E

jmax

Reverse diode dv/dt

IS=30A, VDS=24V, di/dt=200A/µs, T

jmax

=175°C

Gate source voltage V
Power dissipation

TC=25°C

I

D puls

E

AS

AR

dv/dt 6 kV/µs

GS

P

tot

120

15 mJ

6

±20

60 W

V

Operating and storage temperature T

, T

j

stg

-55... +175

IEC climatic category; DIN IEC 68-1 55/175/56

Page 1

°C

2003-01-17

IPD20N03L
IPU20N03L

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R
R

R

thJC

thJA

thJA

- 1.7 2.5 K/W

- - 100

-

-

-

-

75
50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID=25µA

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

-

0.01
10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=15A

Drain-source on-state resistance

VGS=10V, ID=15A

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

= 2.5K/W the chip is able to carry ID= 42A at 25°C, for detailed

thJC

Page 2

I

GSS

R

DS(on)

R

DS(on)

- 1 100 nA

- 22.9 31

- 15.5 20

mΩ

2003-01-17

IPD20N03L
IPU20N03L

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q

Gate charge total Q

fs

iss

oss

rss

G

d(on)

r

d(off)

f

gs

gd

g

VDS≥2*ID*R
ID=30A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

14 28 - S

- 530 700 pF

- 200 275

- 60 90

- 1.3 - Ω

VDD=15V, VGS=10V,

ID=15A,

RG=12.7Ω

- 6.2 9.3 ns

- 11 17

- 23 34

- 18 27

VDD=15V, ID=15A - 2.5 3.1 nC

- 6.4 9.6

VDD=15V, ID=15A,
VGS=0 to 5V

- 8.4 11

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous
forward current

Inv. diode direct current, pulsed
Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

oss

(plateau)

I

S

I

SM

SD

rr

rr

VDS=15V, ID=15A,
VGS=0V

VDD=15V, ID=15A - 3.6 - V

TC=25°C - - 30 A

- 8 10 nC

- - 120

VGS=0V, IF=30A - 1.1 1.4 V

VR=15V, I

diF/dt=100A/µs

F=lS

,

- 15 18 ns

- 2 3 nC

Page 3

2003-01-17