Infineon IPD06N03L Schematic [ru]
)
)
)
j
g
=
OptiMOS
=Buck converter series
==
Feature
N-Channel
Logic Level
Low on-resistance R
Excellent Gate Charge x R
Superior thermal resistance
175°C operating temperature
dv/dt rated
Ideal for fast switching buck converters
DS(on
DS(on
product (FOM)
Preliminary data
IPD06N03L
Product Summary
V
DS
R
DS(on
I
D
P-TO252
30 V
5.9 m
50 A
Type Package Ordering Code
IPD06N03L P-TO252 Q67042-S4109
Marking
06N03L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C1)
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25
Reverse diode dv/dt
IS=50A, VDS=24V, di/dt=200A/µs, T
jmax
=175°C
I
I
E
dv/dt 6 kV/µs
Gate source voltage V
Power dissipation
TC=25°C
P
D
D puls
AS
GS
tot
50
50
200
30 mJ
±20
125 W
A
V
Operating and storage temperature T
T
,
st
-55... +175
°C
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
2001-10-18
Preliminary data
IPD06N03L
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
R
R
thJC
thJA
thJA
- - 1.2 K/W
- - 100
-
-
-
-
75
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
I
= 80 µA
D
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
0.01
1
µA
V
=30V, VGS=0V, Tj=125°C
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=30A
Drain-source on-state resistance
VGS=10V, ID=30A
1
Current limited by bondwire and calculated with max. source pin temperature of 85°C;
with a R
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
= 1.2K/W the chip is able to carry ID= 91A.
thJC
Page 2
I
GSS
R
DS(on)
R
DS(on)
-
10
100
- 1 100 nA
- 6.8 8.7
- 4.7 5.9
2001-10-18
m
Preliminary data
(p
)
IPD06N03L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
VDS
2*ID*R
DS(on)max
I
=30A
D
VGS=0V, VDS=25V,
f=1MHz
,
29 58 - S
- 1900 2370 pF
- 750 940
- 170 250
VDD=15V, VGS=10V,
I
=25A, RG=3.6
D
- 7.3 11 ns
- 22 33
- 34 50
- 20.5 30.7
VDD=15V, ID=25A - 6.3 8.4 nC
- 12.3 16.4
VDD=15V, ID=25A,
V
=0 to 5V
GS
- 25.8 34.3
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
S
SM
SD
rr
rr
lateau
VDS=15V, ID=25A,
V
=0V
GS
VDD=15V, ID=25A - 3.1 - V
TC=25°C - - 50 A
- 25.5 31.9
- - 200
VGS=0V, IF=50A - 0.9 1.3 V
VR=15V, I
di
/dt=100A/µs
F
lS,
=
F
- 43 54 ns
- 50 63 nC
Page 3
2001-10-18
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