INFINEON IPB77N06S3-09, IPI77N06S3-09, IPP77N06S3-09 User Manual
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IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
OptiMOS®-T Power-Transistor
Product Summary
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B
Type Package Ordering Code Marking
IPB77N06S3-09 PG-TO263-3-2 SP0000-88715 3N0609
V
DS
R
DS(on),max
I
D
55 V
(SMD version) 8.8
77 A
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
mΩ
IPI77N06S3-09 PG-TO262-3-1 SP0000-88716 3N0609
IPP77N06S3-09 PG-TO220-3-1 SP0000-88717 3N0609
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
1)
2)
Avalanche energy, single pulse
Drain gate voltage
Gate source voltage
2)
4)
3)
I
D
I
D,pulse
E
AS
V
DG
V
GS
TC=25 °C, VGS=10 V
T
=100 °C,
C
V
GS
=10 V
2)
TC=25 °C
ID=38 A
Value
77 A
55
308
170 mJ
55
±20 V
stg
TC=25 °C
107 W
-55 ... +175 °C
Power dissipation
Operating and storage temperature
P
tot
T
, T
j
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 0.9 page 1 2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
2)
R
thJC
R
thJA
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 62
2
cooling area
6 cm
5)
- - 1.4 K/W
--62
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
GS(th)
=0 V, ID=250 µA
VDS=VGS, ID=55 µA
55 - - V
2.1 3 4
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
I
R
DSS
GSS
DS(on)
VDS=25 V, VGS=0 V,
T
=25 °C
j
V
=25 V, VGS=0 V,
DS
T
=125 °C
j
1)
VGS=20 V, VDS=0 V
VGS=10 V, ID=39 A
V
=10 V, ID=39 A,
GS
SMD version
- 0.1 1 µA
- 1 100
- 1 100 nA
- 7.7 9.1
mΩ
- 7.4 8.8
Rev. 0.9 page 2 2005-09-16
IPB77N06S3-09
y
g
IPI77N06S3-09, IPP77N06S3-09
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
2)
C
iss
V
=0 V, VDS=25 V,
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
2)
Q
gs
Q
gd
Q
g
GS
f =1 MHz
V
=27.5 V,
DD
V
=10 V, ID=77 A,
GS
R
=10 Ω
G
=11 V, ID=77 A,
V
DD
V
=0 to 10 V
GS
- 5335 - pF
- 812 -
- 775 -
-29-ns
-51-
-29-
-51-
-41-nC
-17-
- 77 103
Gate plateau voltage
V
plateau
- 7.1 - V
Reverse Diode
Diode continous forward current
I
S
- - 77 A
TC=25 °C
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
1)
Current is limited by bondwire; with an R
2)
2)
2)
2)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
I
S,pulse
V
t
rr
Q
thJC
SD
rr
VGS=0 V, IF=77 A,
T
=25 °C
j
VR=27.5 V, IF=IS,
di
/dt =100 A/µs
F
= 1.4 K/W the chip is able to carry 77A at 25°C. For detailed
- - 308
- 1 1.3 V
-43-ns
-58-nC
Rev. 0.9 page 3 2005-09-16
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