Infineon BCR148U Schematic [ru]
NPN Silicon Digital Transistor Array
g
BCR148U
4
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
=47k, R2=47k)
1
C1 B2 E2
6 54
R
2
TR1
R
1
R
2
TR2
R
1
321
C2B1E1
EHA07174
Type Marking Pin Configuration Package
BCR148U WEs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
5
6
1
VPW09197
SC74
3
2
Maximum Ratings
Parameter
Collector-emitter voltage 50 V
Emitter-base voltage
Input on Voltage
Total power dissipation, TS = 118 °C
Junction temperature 150 °C
Symbol Value Unit
V
CEO
V
V
V
I
P
T
T
C
CBO
EBO
i(on)
tot
j
st
50Collector-base voltage
10
50
70 mADC collector current
250
mW
-65 ... 150Storage temperature
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
130 K/W
Nov-29-20011
BCR148U
A
Electrical Characteristics at T
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector cutoff current
V
= 40 V, IE = 0
CB
Emitter cutoff current
V
= 10 V, IC = 0
EB
DC current gain 1)
I
= 5 mA, VCE = 5 V
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
50 - - V
50 - -
- - -
- - 100 nA
- - 164 µA
70 - - -
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on Voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor
Resistor ratio
AC Characteristics
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
= 10 V, f = 1 MHz
V
CB
V
CEsat
V
i(off)
V
i(on)
R
1
R1/R
f
T
C
cb
- - 0.3 V
0.8 - 1.5
1 - 3
32 47 62
2
0.9 1 1.1 -
-
-Collector-base capacitance
100 -Transition frequency
3 - pF
k
MHz
1) Pulse test: t < 300s; D < 2%
Nov-29-20012
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