Infineon BCR142, BCR142F, BCR142FL3, BCR142T, BCR142W Schematic [ru]

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

BCR142...

• Built in bias resistor (R

=22kΩ, R2=47kΩ)

1

BCR142/F/L3
BCR142T/W

C

3

R

1

R

2

21

EB

EHA07184

Type Marking Pin Configuration Package

BCR142

WZs

1=B

2=E

3=C

-

-

-

SOT23

BCR142F

BCR142FL3

BCR142T

BCR142W

WZs

WZ

WZ

WZs

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

-

-

-

-

-

-

-

-

-

-

-

-

TSFP-3

TSLP-3-4

SC75

SOT323

1

2006-05-04

BCR142...

)

)

j

g

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V

Collector-base voltage V

Input forward voltage V

Input reverse voltage V

Collector current I

Total power dissipation-

T

BCR142,

BCR142F,

BCR142L3,

BCR142T,

BCR142W,

≤ 102°C

S

T

≤ 128°C

S

T

≤ 135°C

S

T

≤ 109°C

S

T

≤ 124°C

S

P

Junction temperature T

Storage temperature T

CEO

CBO

i(fwd

i(rev

C

tot

st

50 V

50

60

10

100 mA

200

250

250

250

250

150 °C

-65 ... 150

mW

Thermal Resistance
Parameter Symbol Value Unit

Junction - soldering point1)

BCR142

BCR142F

BCR142L3

BCR142T

BCR142W

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

R

thJS

≤ 240

≤ 90

≤ 60
≤ 165
≤ 105

K/W

2

2006-05-04

BCR142...

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 100 µA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Collector-base cutoff current

V

= 40 V, IE = 0

CB

Emitter-base cutoff current

V

= 10 V, IC = 0

EB

DC current gain-1)

I

= 5 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

V

CEsat

50 - -

50 - -

- - 100 nA

- - 227 µA

70 - - -

- - 0.3 V

V

Input off voltage

I

= 100 µA, VCE = 5 V

C

Input on voltage

I

= 2 mA, VCE = 0.3 V

C

Input resistor R

V

V

i(off)

i(on)

1

Resistor ratio R1/R

AC Characteristics

Transition frequency

= 10 mA, VCE = 5 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

1

Pulse test: t < 300µs; D < 2%

f

C

T

cb

0.5 - 1.2

0.8 - 2.5

15 22 29 kΩ

2

0.42 0.47 0.52 -

- 150 - MHz

- 3 - pF

3

2006-05-04

BCR142...

DC current gain h

= 5V (common emitter configuration)

V

CE

3

10

-

2

10

FE

FE

= ƒ(I

)

C

h

1

10

0

10

10

-1

10

0

10

1

mA

Collector-emitter saturation voltage

V

2

10

I

C

= ƒ(I

CEsat

2

10

mA

C

I

1

10

0

10

0 0.2 0.4 0.6

), hFE = 20

C

V

V

1

CEsat

Input on Voltage Vi

= 0.3V (common emitter configuration)

V

CE

2

10

mA

1

10

C

I

0

10

-1

10

-1

10

10

(on)

0

= ƒ(IC)

10

1

Input off voltage V

= 5V (common emitter configuration)

V

CE

1

10

mA

0

10

C

I

-1

10

-2

10

-3

10

0 0.5 1 1.5

i(on)

10

2

V

V

i(off)

= ƒ(I

)

C

V

V

2.5

i(off)

4

2006-05-04

BCR142...

Total power dissipation P

BCR142

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

= ƒ(T

tot

)

S

Total power dissipation P

= ƒ(T

tot

)

S

BCR142F

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

T

°C

150

S

T

°C

150

S

Total power dissipation P

BCR142L3

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

= ƒ(T

tot

)

S

Total power dissipation P

= ƒ(T

tot

)

S

BCR142T

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

T

°C

150

S

T

°C

150

S

5

2006-05-04