Infineon BCR139F, BCR139L3, BCR139T Schematic [ru]

NPN Silicon Digital Transistor

g

g

• Switching circuit, inverter, interface circuit,

driver circuit

BCR139...

• Built in bias resistor (R

=22 kΩ)

1

BCR139F/L3
BCR139T

C

3

R

1

12

BE

EHA07264

Type Markin

BCR139F

WYs

1=B

Pin Configuration Package

2=E

3=C

-

-

-

TSFP-3

BCR139L3

BCR139T

WY

WY

1=B

1=B

2=E

2=E

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

Collector-base voltage V

Input forward voltage V

Input reverse voltage V

Collector current I

Total power dissipation-

BCR139F, T

BCR139L3, T

BCR139T, T

≤ 128°C

S

≤ 135°C

S

≤ 109°C

S

P

Junction temperature T

Storage temperature T

3=C

3=C

CEO

CBO

i(fwd)

i(rev)

C

tot

j

st

-

-

-

-

-

-

TSLP-3-4

SC75

50 V

50

60

5

100 mA

mW

250

250

250

150 °C

-65 ... 150

1

2006-06-01

Thermal Resistance
Parameter

BCR139...

Symbol Value Unit

Junction - soldering point1)

BCR139F

BCR139L3

BCR139T

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 100 µA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Collector-base cutoff current

V

= 40 V, IE = 0

CB

Emitter-base cutoff current

V

= 5 V, IC = 0

EB

DC current gain2)

I

= 5 mA, VCE = 5 V

C

R

thJS

K/W

≤ 90

≤ 60

≤ 165

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

50 - -

50 - -

- - 100 nA

- - 100 nA

120 - 630 -

V

Collector-emitter saturation voltage2)

I

= 10 mA, IB = 0.5 mA

C

Input off voltage

I

= 100 µA, VCE = 5 V

C

Input on voltage

I

= 2 mA, VCE = 0.3 V

C

V

V

V

Input resistor R

AC Characteristics

Transition frequency

= 10 mA, VCE = 5 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

1

For calculation of

2

Pulse test: t < 300µs; D < 2%

R

please refer to Application Note Thermal Resistance

thJA

f

C

CEsat

i(off)

i(on)

1

T

cb

- - 0.3 V

0.4 - 0.8

0.5 - 1.1

15 22 29 kΩ

- 150 - MHz

- 3 - pF

2

2006-06-01

BCR139...

DC current gain h

= 5V (common emitter configuration)

V

CE

3

10

FE

h

2

10

1

10

-4

10

FE

10

= ƒ(I

-3

)

C

-2

10

Collector-emitter saturation voltage

CEsat

10

A

10

C

I

10

10

= ƒ(I

-1

-2

-3

-4

V

A

I

-1

10

C

), hFE = 20

C

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

V

CEsat

1

Input on Voltage Vi

= 0.3V (common emitter configuration)

V

CE

-1

10

A

-2

10

C

I

-3

10

-4

10

-1

10

10

(on)

0

= ƒ(IC)

10

1

Input off voltage V

= 5V (common emitter configuration)

V

CE

-2

10

A

-3

10

C

I

-4

10

-5

10

-6

10

0 0.5 1 1.5 2

i(on)

10

2

V

V

i(off)

= ƒ(I

)

C

V

V

3

i(off)

3

2006-06-01

BCR139...

Total power dissipation P

BCR139F

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

= ƒ(T

tot

)

S

Total power dissipation P

= ƒ(T

tot

)

S

BCR139L3

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

°C

150

T

S

T

°C

150

S

Total power dissipation P

BCR139T

300

mW

250

225

200

tot

P

175

150

125

100

75

50

25

0

0 15 30 45 60 75 90 105 120

= ƒ(T

tot

)

S

°C

150

T

S

4

2006-06-01