INFINEON BC817U User Manual
查询BC817U供应商
NPN Silicon Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
BC817U
4
5
6
3
2
1
C1 B2 E2
6 54
TR1
TR2
321
C2B1E1
EHA07178
VPW09197
Type Marking Pin Configuration Package
BC817U 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I
Base current I
Symbol Value Unit
CEO
CBO
EBO
C
CM
B
45 V
50
5
500 mA
1 A
100 mA
Peak base current I
Total power dissipation, TS = 115 °C
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
BM
P
R
tot
j
stg
thJS
200
330 mW
150 °C
-65 ... 150
105 K/W
Nov-29-20011
Electrical Characteristics at TA=25°C, unless otherwise specified
BC817U
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
= 10 µA, IE = 0
I
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 25 V, IE = 0
V
CB
Collector cutoff current
= 25 V, IE = 0 , TA = 150 °C
V
CB
Emitter cutoff current
= 4 V, IC = 0
V
EB
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
EBO
45 - - V
50 - -
5 - -
- - 100 nA
- - 50 µA
- - 100 nA
DC current gain 1)
= 100 mA, VCE = 1 V
I
C
= 300 mA, VCE = 1 V
I
C
Collector-emitter saturation voltage1)
= 500 mA, IB = 50 mA
I
C
Base-emitter saturation voltage 1)
= 500 mA, IB = 50 mA
I
C
AC Characteristics
Transition frequency
= 50 mA, VCE = 5 V, f = 100 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
h
FE
V
CEsat
V
BEsat
f
T
C
cb
C
eb
160
100
250
-
400
-
- - 0.7 V
- - 1.2
- 170 - MHz
- 6 - pF
- 60 -
-
1) Pulse test: t < 300s; D < 2%
Nov-29-20012
Loading...