INFINEON BC807W, BC808W User Manual

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BC807W, BC808W

PNP Silicon AF Transistors

3



For general AF applications



High collector current



High current gain



Low collector-emitter saturation voltage



Complementary types: BC817W, BC818W (NPN)

1

Type Marking Pin Configuration Package

2

VSO05561

BC807-16W
BC807-25W
BC807-40W
BC808-16W
BC808-25W
BC808-40W

5As
5Bs
5Cs
5Es
5Fs
5Gs

1 = B
1 = B
1 = B
1 = B
1 = B
1 = B

Maximum Ratings
Parameter

Collector-base voltage V
Emitter-base voltage V

DC collector current I
Peak collector current I
Base current mA100I
Peak base current

2 = E
2 = E
2 = E
2 = E
2 = E
2 = E

3 = C
3 = C
3 = C
3 = C
3 = C
3 = C

Symbol UnitBC 808WBC 807W

CEO
CBO
EBO

C
CM

B
BM

45Collector-emitter voltage 25V
50 30

5 5

SOT323
SOT323
SOT323
SOT323
SOT323
SOT323

V

500 mA

A1

200I

Total power dissipation, T
Junction temperature °C
Storage temperature T

= 130 °C mW250P

S

tot
j
st

150T

-65 ... 150

Thermal Resistance

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

R

thJS



80 K/W

Nov-29-20011

BC807W, BC808W

A

)

Electrical Characteristics at T

= 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector cutoff current

V

= 25 V, IE = 0

CB

Collector cutoff current

V

= 25 V, IE = 0 , TA = 150 °C

CB

BC807W
BC808W

BC807W
BC808W

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

45
25

50
30

-

-

-

-

-

-

-

-

5 - -

- - 100 nA

- - 50 µA

V

Emitter cutoff current

V

= 4 V, IC = 0

EB

DC current gain 1)

I

= 100 mA, VCE = 1 V

C

DC current gain 1)

I

= 500 mA, VCE = 1 V

C

Collector-emitter saturation voltage1

I

= 500 mA, IB = 50 mA

C

Base-emitter saturation voltage 1)

I

= 500 mA, IB = 50 mA

C

h

FE

h

FE

h

FE

-grp. 16

-grp. 25

-grp. 40

I

EBO

h

FE

h

FE

V

CEsat

V

BEsat

- - 100 nA

100
160
250

160
250
350

250
400
630

40 - -

- - 0.7 V

- - 1.2

-

1) Pulse test: t ≤ 300µs, D = 2%

Nov-29-20012