HP MSA-0736 User Manual

查询MSA-0735供应商

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0735, -0736

Features

• Cascadable 50 Ω Gain Block

• Low Operating Voltage:

4.0 V Typical V

• 3 dB Bandwidth:

DC to 2.4 GHz

d

microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica­tions.

• 13.0 dB Typical Gain at

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Cost Effective Ceramic
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and

Description

The MSA-0735 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit

reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

(MMIC) housed in a cost effective,

Typical Biasing Configuration

R

bias

35 micro-X Package

,

MAX

V

> 5 V

CC

Note:

1. Short leaded 36 package available upon
request.

[1]

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

= 4.0 V

d

C

block

5965-9591E

6-394

MSA-0735, -0736 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 6.5 mW/° C for T

4. Storage above +150°C may tarnish the leads of this package making it

5. Ths small spot size of this technique results in a higher, though more

= 25°C.

CASE

difficult to solder into a circuit.

accurate determination of θ
MENTS section “Thermal Resistance” for more information.

[2,3]

275 mW

> 157° C.

C

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 155°C/W

[2,5]

:

Electrical Specifications

[1]

, T

= 25° C

A

Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Units Min. Typ. Max.

G

P

∆G

P

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5
Gain Flatness f = 0.1 to 1.3 GHz dB ±0.6 ± 1.0
3 dB Bandwidth GHz 2.4
Input VSWR f = 0.1 to 2.5 GHz 2.0:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5
P
IP
t
V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 3.6 4.0 4.4

dV/dT Device Voltage Temperature Coefficient mV/°C –7.0

Note:

1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.

Part Number Ordering Information

Part Number No. of Devices Container

MSA-0735 10 Strip
MSA-0736-BLK 100 Antistatic Bag
MSA-0736-TR1 1000 7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-395

MSA-0735, -0736 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 22 mA)

d

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .13 –3 13.5 4.71 175 –19.0 .112 2 .29 –7

0.2 .13 –6 13.4 4.69 170 –18.5 .119 3 .29 –12

0.4 .14 –13 13.4 4.68 160 –18.6 .118 6 .29 –24

0.6 .16 –20 13.3 4.64 150 –18.4 .120 7 .28 –35

0.8 .19 –29 13.2 4.60 140 –18.1 .125 8 .28 –47

1.0 .21 –40 12.9 4.42 129 –17.6 .131 10 .27 –58

1.5 .27 –71 12.2 4.07 104 –16.5 .149 10 .24 –83

2.0 .32 –107 11.5 3.74 79 –15.6 .165 7 .19 –103

2.5 .37 –134 10.3 3.26 62 –15.3 .173 5 .15 –113

3.0 .43 –160 8.8 2.76 44 –15.4 .171 0 .14 –120

3.5 .47 –179 7.5 2.37 27 –15.3 .173 –4 .16 –120

4.0 .49 167 6.2 2.05 12 –15.2 .168 –6 .21 –121

5.0 .51 134 4.0 1.59 –15 –15.2 .173 –11 .28 –135

6.0 .60 96 2.1 1.27 –42 –14.6 .185 –16 .29 –167

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

14

Gain Flat to DC

12

10

8

(dB)

p

G

6

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, Id = 22 mA.

14
13

(dB)

p

G

12

6
5

(dBm)

4

1 dB

P

3

–25–55 +25 +85 +125

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=22mA.

G

P

NF

P

1 dB

= 25° C

A

6
5

NF (dB)

4

40

30

20

(mA)

d

I

10

TC = +125°C
TC = +25°C
TC = –55°C

0

102345

V

(V)

d

16

14

12

10

(dB)

p

G

8

6

4

10 20 30 40

Id (mA)

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.

15

Id = 40 mA

12

9

Id = 22 mA

(dBm)

6

1 dB

P

3

0

Id = 15 mA

–3

0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

6.0
Id = 15 mA

Id = 22 mA
Id = 40 mA

5.5

5.0

NF (dB)

4.5

4.0

0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-396

35 micro-X Package Dimensions

4

GROUND

RF OUTPUT
AND BIAS

A07

2

GROUND

Notes:
(unless otherwise specified)

1. Dimensions are

.100

2.54

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.057 ± .010

1.45 ± .25

.085

2.15

RF INPUT

13

.020
.508

.083

2.11

in

mm

DIA.

.022

.56

.455 ± .030

11.54 ± .75
.006 ± .002

.15 ± .05

6-397