HP INA-52063-TR1, INA-52063-BLK Datasheet
1.5 GHz Low Noise Silicon
MMIC Amplifier
Technical Data
INA-52063
Features
• Ultra-Miniature Package
• Single 5 V Supply (30 mA)
• 22 dB Gain
• 8 dBm P
1dB
• Unconditionally Stable
Applications
• Amplifier for Cellular,
Cordless, Special Mobile
Radio, PCS, ISM, Wireless
LAN, DBS, TVRO, and TV
Tuner Applications
Equivalent Circuit
(Simplified)
Surface Mount SOT-363 (SC-70) Package
Pin Connections and Package Marking
GND
2
GND
1
INPUT
3
Note: Package marking provides
orientation and identification.
52
OUTPUT
6
and V
GND 3
5
4V
CC
Description
Hewlett-Packard’s INA-52063 is a
Silicon monolithic amplifier that
offers excellent gain and power
output for applications to
1.5 GHz. Packaged in an ultraminiature SOT-363 package, it
requires half the board space of a
SOT-143 package.
The INA-52063 is fabricated using
HP’s 30 GHz f
MAX
ISOSAT
Silicon bipolar process which
CC
uses nitride self-alignment submicrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
TM
GROUND 2
5965-9681E
V
CC
RF
INPUT
6-156
RF
OUTPUT
& V
CC
GROUND 1
GROUND 3
Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
CC
P
in
T
j
T
STG
Supply Voltage, to Ground V 12
CW RF Input Power dBm +13
Junction Temperature ° C 150
Storage Temperature °C - 65 to 150
[1]
Thermal Resistance
θ
= 170°C/W
j-c
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
= 25°C (T
C
temperature at the package pins where
contact is made to the circuit board)
is defined to be the
C
[2]
:
INA-52063 Electrical Specifications, T
= 25°C, ZO = 50 Ω, V
C
= 5 V, unless noted
CC
Symbol Parameters and Test Conditions Units Min. Typ. Max.
G
p
Power Gain (|S21|2) f = 900 MHz dB 20 22
NF Noise Figure f = 900 MHz dB 4.0
P
1dB
IP
3
IP
3
Output Power at 1 dB Gain Compression f = 900 MHz dBm +8
Third Order Intercept Point f = 900 MHz dBm +20
Third Order Intercept Point f = 2100 MHz dBm +15
VSWR Input VSWR f = 900 MHz 1.4
Output VSWR f = 900 MHz 1.3
I
CC
ι
d
Device Current mA 30 38
Group Delay f = 900 MHz ps 238
6-157
INA-52063 Typical Performance, T
= 25°C, ZO = 50 Ω, V
C
= 5 V, unless noted
CC
24.0
23.0
22.0
21.0
20.0
19.0
GAIN (dB)
18.0
17.0
16.0
15.0
0.05
0.65
1.25 1.85
FREQUENCY (GHz)
5.5 V
5.0 V
4.5 V
Figure 1. Gain vs. Frequency and
Voltage.
24.0
23.0
22.0
21.0
20.0
19.0
GAIN (dB)
18.0
17.0
16.0
15.0
0.05
0.60
1.20 1.80
FREQUENCY (GHz)
-40 °C
+25 °C
+85 °C
6.0
5.5 V
5.0 V
4.5 V
0.2
0.5 1.1 1.7
FREQUENCY (GHz)
2.45
5.5
5.0
4.5
NOISE FIGURE (dB)
4.0
3.5
0.09 2.6
Figure 2. Noise Figure vs. Frequency
and Voltage.
2.40
7.0
6.5
6.0
5.5
5.0
4.5
4.0
NOISE FIGURE (dB)
3.5
3.0
0.05
-40 °C
+25 °C
+85 °C
0.80
0.40
FREQUENCY (GHz)
1.20
1.60 2.00
12.0
11.0
10.0
9.0
8.0
7.0
6.0
P1dB (dBm)
5.0
4.0
3.0
2.0
2.30.8 1.4 2.0
0.05
5.5 V
5.0 V
4.5 V
0.30
FREQUENCY (GHz)
2.400.60 1.20 1.80
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
2.40
12
11
10
9
8
7
P1dB (dBm)
6
5
4
0.05
0.60
0.30
FREQUENCY (GHz)
1.20 1.80
-40 °C
+25 °C
+85 °C
2.40
Figure 4. Gain vs. Frequency and
Temperature.
2.2
2.0
1.8
1.6
VSWR (dB)
1.4
1.2
1.0
0.0
5
VSWR IN
VSWR OUT
0.7
0.4
0
1.1
5
0
FREQUENCY (GHz)
1.4
5
5
0
2.1
1.8
Figure 7. Input and Output VSWR vs.
Frequency.
Figure 5. Noise Figure vs. Frequency
and Temperature.
60
-40 °C
+25 °C
+85 °C
1.0 3.0 5.0
VCC (V)
2.5
50
40
30
(mA)
CC
I
20
10
0
0
0.0
Figure 8. Supply Current vs. Voltage
and Temperature.
6-158
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
7.02.0 4.0 6.0
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