HP INA-30311-TR1, INA-30311-BLK Datasheet

1 GHz Low Noise Silicon MMIC
Amplifier

Technical Data

INA-30311

Features

• Internally Biased, Single 3 V
Supply (6 mA)

• 3.5 dB NF

• 13 dB Gain

• Unconditionally Stable

SOT-143 Surface Mount Package

Applications

• LNA or IF Amplifier for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications

Pin Connections and Package Marking

Equivalent Circuit (Simplified)

INPUT

V

CC

N30

V

CC

GND

OUTPUT

Description

Hewlett-Packard’s INA-30311 is a
Silicon monolithic amplifier for
applications to 1.0 GHz. Packaged
in a miniature SOT-143 package,
it requires very little board space.

The INA-30311 uses an internally
biased topology which eliminates
the need for external components
and provides decreased sensitiv­ity to ground inductance.

The INA-30311 is designed with
an output impedance that varies

from near 200 Ω at low
frequencies to near 50 Ω at higher

frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.

RF

INPUT

5963-6679E

GROUND

RF

OUTPUT

6-140

The INA-30311 is fabricated using
HP’s 30 GHz f
Silicon bipolar process which
uses nitride self-alignment sub­micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.

MAX

ISOSAT

TM

Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

CC

P

in

T

j

T

STG

Device Voltage, to ground V 12

CW RF Input Power dBm +13

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

θ

= 550°C/W

j-c

Notes:

1. Operation of this device above any one
of these limits may cause permanent
damage.

2. T

= 25°C (T

C

temperature at the package pins where
contact is made to the circuit board).

is defined to be the

C

[2]

:

INA-30311 Electrical Specifications

[3]

, T

= 25°C, ZO = 50 Ω, V

C

CC

= 3 V

Symbol Parameters and Test Conditions Units Min. Typ. Max.

G

p

Power Gain (|S21|2) f = 900 MHz dB 11 13

NF Noise Figure f = 900 MHz dB 3.5

P

1dB

IP

3

Output Power at 1 dB Gain Compression f = 900 MHz dBm -11

Third Order Intercept Point f = 900 MHz dBm -2

VSWR Input VSWR f = 900 MHz 1.7

I

cc

ι

d

INA-30311 Typical Scattering Parameters

Freq. S

Device Current mA 6.3 7.5

Group Delay f = 900 MHz ps 325

[3]

, T

11

= 25°C, ZO = 50 Ω, V

C

S

21

S

12

CC

= 3 V

S

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang Factor

0.05 0.09 -1 16.12 6.40 -6 -38.1 0.012 2 0.57 -1 4.35

0.10 0.09 -2 16.11 6.39 -12 -38.2 0.012 4 0.56 -3 4.43

0.20 0.10 -6 16.12 6.40 -25 -38.4 0.012 8 0.56 -7 4.41

0.30 0.13 -16 16.14 6.41 -38 -38.9 0.011 13 0.55 -11 4.83

0.40 0.16 -29 16.07 6.36 -52 -39.4 0.011 19 0.54 -14 4.88

0.50 0.18 -42 15.90 6.24 -66 -40.1 0.010 27 0.52 -18 5.60

0.60 0.21 -59 15.56 6.00 -81 -40.7 0.009 40 0.50 -20 6.58

0.70 0.22 -75 15.04 5.65 -95 -40.7 0.009 57 0.47 -23 7.26

0.80 0.24 -92 14.34 5.21 -109 -39.6 0.011 74 0.46 -24 6.49

0.90 0.25 -107 13.44 4.70 -122 -37.6 0.013 86 0.44 -24 6.23

1.00 0.26 -122 12.53 4.23 -135 -35.5 0.017 94 0.43 -25 5.35

1.20 0.27 -144 10.50 3.35 -155 -32.3 0.024 100 0.42 -26 4.83

1.40 0.27 -162 8.50 2.66 -173 -29.6 0.033 101 0.42 -27 4.43

1.60 0.27 -177 6.69 2.16 172 -27.5 0.042 100 0.42 -28 4.31

1.80 0.27 173 5.01 1.78 159 -25.7 0.052 99 0.42 -30 4.22

2.00 0.27 163 3.58 1.51 147 -24.1 0.062 97 0.42 -32 4.17

2.20 0.27 156 2.35 1.31 136 -22.5 0.075 95 0.42 -35 3.97

2.40 0.26 150 1.21 1.15 126 -21.4 0.085 92 0.41 -37 4.04

2.50 0.26 147 0.75 1.09 122 -20.9 0.091 91 0.41 -39 3.99

Note:

3. Reference plane per Figure 9 in Applications Information section.

K

6-141