HP INA-12063-TR1, INA-12063-BLK Datasheet

1.5 GHz Low Noise Self-Biased Transistor Amplifier

Technical Data

INA-12063

Features

• Integrated, Active Bias Circuit

• Single Positive Supply Voltage (1.5 – 5V)

• Current Adjustable, 1 to 10mA

• 2 dB Noise Figure at 900␣ MHz

• 16 dB Gain at 900 MHz

25 dB Gain at 100 MHz

Applications

• Amplifier Applications for Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN Applications

Equivalent Circuit

(Simplified)

ACTIVE

GND 2

INPUT

BIAS

CIRCUIT

FEEDBACK

GND 1

NETWORK

bias

RF OUTPUT and V

Surface Mount Package SOT-363 (SC-70)

Pin Connections and Package Marking

bias

GND 2

RF INPUT

Note:

Package marking provides orientation and identification.

RF OUTPUT

and V

GND 1

Description

Hewlett-Packard’s INA-12063 is a Silicon monolithic self-biased transistor amplifier that offers excellent gain and noise figure for applications to 1.5 GHz. Packaged in an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package.

The INA-12063 is a unique RFIC that combines the performance flexibility of a discrete transistor

with the simplicity of using an integrated circuit. Using a patented bias circuit, the performance and operating current of the INA-12063 can be adjusted over the 1 to 10␣ mA range.

The INA-12063 is fabricated using HP’s 30 GHz f

ISOSAT™

MAX

Silicon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metalization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.

5965-5365E

6-116

INA-12063 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

STG

Supply Voltage, to Ground V 7 Collector Voltage V 7 Collector Current mA 15 CW RF Input Power dBm 13 Junction Temperature °C 150 Storage Temperature °C -65 to 150

[1]

Thermal Resistance

= 170°C/ W

j-c

[2]

Notes:

1. Operation of this device above any one of these limits may cause permanent damage.

2. TC = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board).

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max. Std.Dev.

NF Noise Figure f = 900 MHz

Power Gain (|S21|2) f = 900 MHz

Output Power at 1 dB Gain Compression f = 900 MHz

1dB

Third Order Intercept Point f = 900 MHz

Device Current

[4]

= 25°C, Vd = 3 V, unless noted

f = 250 MHz

900 MHz LNA

250 MHz IF Amp

[1]

d B 14.5 16 0.36

[2]

[1]

d B 2.0 2.6 0.2

[2]

[1]

dBm 0

[2]

[1]

dBm 15

[2]

[1]

m A 5 7 0.6

[2]

5.0

-7

1.5

[3]

Notes:

1. See Test Circuit in Figure 32.

2. See Test Circuit in Figure 33.

3. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification.

4. Idd is the total current into Pins 1, 4, and 6 of the device, i.e. Idd = Ic + I

bias

+ Id.

6-117

INA-12063 Typical Performance, 900 MHz LNA (900 MHz Test Circuit, see Figure 32)

TC = 25° C, ZO = 50 Ω, Vd = 3 V, IC = 5 mA, unless noted

GAIN (dB)

-5

-10

0.1 0.5 0.7 0.9 1.10.3 1.3 1.71.5 1.9 FREQUENCY (GHz)

Figure 1. Gain vs. Frequency.

17.2 TA = +85°C

= +25°C

16.8

= –40°C

16.4

16.0

GAIN (dB)

15.6

15.2

-5

-10

RETURN LOSS (dB)

-15

-20

0.1 0.5 0.7 0.9 1.10.3 1.3 1.71.5 1.9 FREQUENCY (GHz)

Figure 2. Input Return Loss vs. Frequency.

2.7

2.45

2.2

NOISE FIGURE (dB)

1.95

+85°C

+25°C

–40°C

-5

-10

RETURN LOSS (dB)

-15

-20

0.1 0.5 0.7 0.9 1.10.3 1.3 1.71.5 1.9 FREQUENCY (GHz)

Figure 3. Output Return Loss vs. Frequency.

TA = +85°C

= +25°C

= –40°C

(dBm)

1dB

-1

14.8 12345

(V)

Figure 4. Gain at 900 MHz vs. Voltage and Temperature.

TA = +85°C

= +25°C

= –40°C

SUPPLY CURRENT (mA)

10 2345

Vd (V)

Figure 7. Supply Current vs. Voltage and Temperature.

1.7 12345

(V)

Figure 5. Noise Figure at 900 MHz vs. Voltage and Temperature.

(dBm)

1 dB

-3

-6

Figure 8. Output P Device Current for V

426810

DEVICE CURRENT (mA)

at 900MHz vs.

1 dB

= 3 V.

-2 12345

(V)

Figure 6. Output P

at 900 MHz vs.

1dB

Voltage and Temperature.

6-118

INA-12063 Typical Scattering Parameters

TC=25°C, ZO = 50 Ω, Vd= 3.0 V

[1]

, IC = 1.5 mA

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 0.93 -8 12.6 4.26 172 -42.2 0.01 86 0.99 -3

0.2 0.92 -16 12.5 4.20 164 -36.2 0.02 79 0.99 -7

0.3 0.90 -24 12.3 4.11 157 -32.8 0.02 73 0.98 -10

0.4 0.89 -32 12.0 4.00 149 -30.5 0.03 69 0.96 -13

0.5 0.83 -38 11.7 3.83 141 -29.1 0.04 64 0.94 -16

0.6 0.79 -45 11.3 3.69 135 -27.9 0.04 60 0.93 -19

0.7 0.75 -52 10.9 3.49 128 -26.8 0.05 56 0.91 -21

0.8 0.72 -58 10.4 3.32 122 -26.1 0.05 53 0.89 -23

0.9 0.69 -64 10.1 3.18 116 -25.5 0.05 50 0.87 -26

1.0 0.65 -69 9.6 3.03 111 -24.9 0.06 47 0.86 -28

1.1 0.61 -74 9.2 2.89 106 -24.5 0.06 45 0.84 -30

1.2 0.59 -80 8.7 2.72 102 -24.2 0.06 43 0.83 -32

1.3 0.55 -84 8.4 2.64 97 -23.9 0.06 41 0.82 -34

1.4 0.52 -89 8.1 2.54 92 -23.6 0.07 40 0.81 -35

1.5 0.49 -94 7.7 2.43 88 -23.3 0.07 38 0.80 -37

1.6 0.47 -98 7.3 2.33 84 -23.2 0.07 36 0.79 -39

1.7 0.44 -103 7.0 2.23 80 -22.9 0.07 35 0.78 -40

1.8 0.42 -107 6.6 2.15 77 -22.9 0.07 35 0.77 -42

1.9 0.40 -112 6.4 2.08 73 -22.5 0.07 34 0.77 -44

2.0 0.38 -116 6.0 1.99 69 -22.3 0.08 33 0.76 -45

2.1 0.36 -120 5.7 1.93 66 -22.1 0.08 32 0.75 -47

2.2 0.34 -124 5.3 1.83 63 -22.0 0.08 29 0.74 -49

2.3 0.31 -129 5.2 1.82 59 -21.9 0.08 30 0.74 -51

2.4 0.31 -133 4.7 1.72 57 -22.0 0.08 29 0.73 -52

2.5 0.29 -137 4.6 1.70 54 -21.7 0.08 31 0.73 -54

2.6 0.28 -144 4.3 1.65 50 -21.4 0.08 30 0.73 -56

2.7 0.27 -149 4.1 1.60 47 -21.0 0.09 29 0.72 -58

2.8 0.25 -154 3.7 1.54 44 -20.7 0.09 27 0.71 -60

2.9 0.23 -156 3.5 1.50 41 -20.9 0.09 24 0.70 -61

3.0 0.24 -162 3.5 1.49 39 -21.0 0.09 28 0.71 -63

Note:

1. Reference plane per Figure 31 in Applications Information section.

Typical Noise Parameters @ 900 MHz, I

Fmin (dB) Γ

1.4 0.6 36 23

Mag. Γ

opt

Ang.

= 1.5 mA

6-119

(Ω)

GAIN (dB)

0.1 0.9 1.7 2.5

|S21|

FREQUENCY (GHz)

MSG

MAG

INA-12063 Typical Scattering Parameters

[1]

, IC = 2.5 mA

TC=25°C, ZO = 50 Ω, Vd= 3.0 V

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 0.90 -10 16.0 6.33 171 -42.2 0.01 87 0.99 -4

0.2 0.88 -18 15.8 6.19 161 -36.2 0.02 79 0.98 -8

0.3 0.85 -27 15.5 5.98 153 -33.2 0.02 73 0.96 -11

0.4 0.82 -35 15.2 5.74 144 -31.1 0.03 68 0.94 -15

0.5 0.76 -42 14.6 5.37 135 -29.6 0.03 62 0.91 -18

0.6 0.71 -49 14.1 5.07 128 -28.4 0.04 59 0.90 -20

0.7 0.67 -56 13.5 4.73 122 -27.5 0.04 55 0.87 -23

0.8 0.62 -62 12.9 4.43 116 -26.6 0.05 53 0.85 -25

0.9 0.59 -67 12.4 4.18 110 -26.1 0.05 51 0.83 -27

1.0 0.54 -72 11.9 3.93 104 -25.6 0.05 49 0.82 -29

1.1 0.51 -76 11.4 3.71 100 -25.1 0.06 48 0.80 -30

1.2 0.49 -81 10.8 3.47 95 -24.8 0.06 46 0.79 -32

1.3 0.45 -84 10.4 3.31 91 -24.5 0.06 44 0.77 -34

1.4 0.42 -89 10.0 3.15 87 -24.1 0.06 44 0.76 -35

1.5 0.39 -93 9.5 2.98 83 -23.6 0.07 42 0.76 -37

1.6 0.37 -96 9.1 2.84 79 -23.5 0.07 41 0.74 -39

1.7 0.35 -100 8.7 2.72 76 -23.3 0.07 40 0.73 -40

1.8 0.33 -104 8.3 2.60 72 -23.0 0.07 41 0.73 -42

1.9 0.31 -108 8.0 2.51 69 -22.5 0.07 40 0.72 -43

2.0 0.29 -112 7.6 2.40 66 -22.2 0.08 40 0.72 -45

2.1 0.27 -115 7.3 2.31 62 -22.0 0.08 38 0.72 -47

2.2 0.25 -119 6.8 2.20 59 -21.8 0.08 36 0.71 -49

2.3 0.24 -122 6.6 2.15 56 -21.6 0.08 36 0.70 -50

2.4 0.23 -126 6.2 2.05 54 -21.7 0.08 36 0.69 -52

2.5 0.22 -131 6.1 2.01 51 -21.2 0.09 38 0.69 -53

2.6 0.20 -136 5.8 1.95 48 -20.7 0.09 36 0.69 -55

2.7 0.19 -142 5.5 1.89 45 -20.4 0.10 35 0.68 -57

2.8 0.18 -145 5.2 1.81 42 -20.0 0.10 32 0.68 -60

2.9 0.16 -146 4.9 1.75 39 -20.2 0.10 29 0.66 -60

3.0 0.17 -153 4.8 1.75 37 -20.1 0.10 32 0.68 -62

Note:

1. Reference plane per Figure 31 in Applications Information section.

Typical Noise Parameters @ 900 MHz, I

Fmin (dB) Γ

1.5 0.54 36 20

Mag. Γ

opt

Ang.

= 2.5 mA

6-120

(Ω)

GAIN (dB)

0.1 0.9 1.7 2.5

MSG

MAG

|S21|

FREQUENCY (GHz)

INA-12063 Typical Scattering Parameters

[1]

, IC = 5 mA

TC=25°C, ZO = 50 Ω, Vd= 3.0 V

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 0.86 -11 19.6 9.56 168 -42.2 0.01 79 0.98 -5

0.2 0.82 -22 19.3 9.18 157 -36.8 0.01 73 0.96 -10

0.3 0.78 -31 18.7 8.65 146 -33.8 0.02 71 0.93 -13

0.4 0.73 -40 18.1 8.07 137 -31.7 0.03 68 0.90 -17

0.5 0.65 -46 17.3 7.34 128 -30.4 0.03 62 0.86 -20

0.6 0.59 -53 16.6 6.75 120 -28.7 0.04 61 0.85 -22

0.7 0.55 -59 15.8 6.18 114 -28.0 0.04 59 0.82 -24

0.8 0.50 -64 15.1 5.68 108 -27.2 0.04 56 0.80 -26

0.9 0.46 -68 14.4 5.26 103 -26.9 0.04 55 0.78 -27

1.0 0.43 -72 13.8 4.88 97 -26.3 0.05 52 0.77 -29

1.1 0.40 -76 13.2 4.55 93 -25.8 0.05 52 0.74 -30

1.2 0.37 -79 12.6 4.24 89 -25.3 0.05 52 0.74 -32

1.3 0.35 -81 12.0 3.99 85 -24.8 0.06 51 0.72 -34

1.4 0.33 -85 11.5 3.76 81 -24.3 0.06 50 0.72 -35

1.5 0.30 -87 11.0 3.55 78 -23.9 0.06 48 0.71 -36

1.6 0.28 -90 10.5 3.37 75 -23.5 0.07 48 0.70 -38

1.7 0.27 -94 10.1 3.21 71 -23.2 0.07 47 0.69 -39

1.8 0.25 -95 9.7 3.05 68 -22.9 0.07 48 0.69 -41

1.9 0.23 -99 9.3 2.93 64 -22.2 0.08 46 0.69 -42

2.0 0.22 -101 9.0 2.81 61 -22.0 0.08 45 0.68 -44

2.1 0.20 -104 8.5 2.67 58 -21.6 0.08 43 0.67 -45

2.2 0.18 -104 8.1 2.55 56 -21.3 0.09 41 0.67 -48

2.3 0.17 -107 7.8 2.47 53 -21.1 0.09 41 0.66 -50

2.4 0.17 -109 7.5 2.37 51 -20.8 0.09 41 0.66 -51

2.5 0.15 -114 7.3 2.31 48 -20.5 0.09 42 0.65 -53

2.6 0.14 -118 7.0 2.24 45 -20.0 0.10 40 0.66 -55

2.7 0.13 -123 6.7 2.17 42 -19.6 0.11 39 0.64 -56

2.8 0.12 -125 6.4 2.08 39 -19.3 0.11 36 0.63 -59

2.9 0.11 -126 6.1 2.02 37 -19.3 0.11 33 0.62 -59

3.0 0.11 -133 6.0 2.00 35 -19.3 0.11 35 0.64 -61

Note:

1. Reference plane per Figure 31 in Applications Information section.

Typical Noise Parameters @ 900 MHz, I

Fmin (dB) Γ

1.8 0.41 38 16

Mag. Γ

opt

Ang.

= 5 mA

6-121

(Ω)

GAIN (dB)

0.1 0.9 1.7 2.5

MSG

MAG

|S21|

FREQUENCY (GHz)

INA-12063 Typical Scattering Parameters

[1]

, IC = 8 mA

TC=25°C, ZO = 50 Ω, Vd= 3.0 V

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 0.80 -13 22.3 12.97 166 -41.9 0.01 73 0.98 -5

0.2 0.76 -24 21.7 12.17 152 -37.4 0.01 72 0.94 -11

0.3 0.69 -35 20.9 11.10 141 -33.9 0.02 75 0.90 -15

0.4 0.63 -44 20.1 10.06 130 -32.2 0.02 69 0.86 -18

0.5 0.55 -49 19.0 8.89 121 -30.6 0.03 64 0.83 -21

0.6 0.50 -55 18.1 8.00 114 -29.6 0.03 64 0.80 -23

0.7 0.45 -59 17.1 7.20 107 -28.9 0.04 59 0.77 -24

0.8 0.41 -64 16.3 6.56 102 -28.0 0.04 59 0.76 -25

0.9 0.37 -67 15.6 6.02 97 -26.9 0.05 58 0.73 -26

1.0 0.34 -69 14.9 5.53 92 -26.5 0.05 58 0.71 -29

1.1 0.32 -72 14.1 5.08 88 -25.9 0.05 57 0.71 -30

1.2 0.30 -76 13.5 4.72 84 -25.4 0.05 56 0.70 -31

1.3 0.28 -76 12.9 4.40 81 -24.7 0.06 55 0.69 -33

1.4 0.26 -79 12.4 4.18 77 -24.1 0.06 53 0.68 -34

1.5 0.24 -82 11.7 3.86 74 -23.5 0.07 53 0.67 -36

1.6 0.23 -81 11.4 3.71 71 -23.4 0.07 52 0.65 -38

1.7 0.21 -84 10.8 3.48 68 -22.8 0.07 52 0.66 -39

1.8 0.20 -85 10.5 3.34 65 -22.7 0.07 51 0.66 -41

1.9 0.19 -89 9.9 3.14 62 -22.0 0.08 50 0.67 -42

2.0 0.17 -88 9.6 3.01 59 -21.5 0.08 48 0.66 -44

2.1 0.17 -91 9.2 2.89 56 -21.2 0.09 47 0.64 -45

2.2 0.15 -91 8.8 2.77 53 -21.0 0.09 44 0.63 -47

2.3 0.14 -93 8.6 2.68 51 -20.6 0.09 43 0.64 -49

2.4 0.14 -94 8.3 2.59 48 -20.4 0.09 43 0.64 -49

2.5 0.13 -98 8.0 2.51 47 -19.9 0.10 43 0.63 -51

2.6 0.12 -102 7.7 2.42 43 -19.5 0.11 42 0.61 -53

2.7 0.11 -103 7.3 2.32 40 -19.0 0.11 41 0.61 -56

2.8 0.10 -107 7.1 2.25 37 -18.6 0.12 38 0.61 -58

2.9 0.10 -101 6.7 2.17 36 -18.7 0.12 34 0.58 -60

3.0 0.09 -110 6.8 2.18 34 -18.7 0.12 35 0.61 -60

Note:

1. Reference plane per Figure 31 in Applications Information section.

Typical Noise Parameters @ 900 MHz, I

Fmin (dB) Γ

2.0 0.30 41 15

Mag. Γ

opt

Ang.

= 8 mA

6-122

(Ω)

GAIN (dB)

0.1 0.9 1.7 2.5

MAG

|S21|

FREQUENCY (GHz)

MSG

INA-12063 Applications Information

Introduction

The INA-12063 is a unique RFIC configuration that combines the performance flexibility of a discrete transistor with the simplicity of using an integrated circuit.

The INA-12063 is an integrated circuit that combines three functions: (1) a silicon bipolar RF transistor, (2) an RF feedback network, and (3) a patented bias regulation circuit. A simplified schematic diagram of the INA-12063 is shown in Figure 9. The result is a versatile gain stage that can be operated from a single +1.5 to +5 volt power supply with the device current set by the user.

The INA-12063 is designed for use in battery powered equipment demanding high performance with low supply voltages and minimal current drain. Typical applications for the INA-12063 include low noise RF amplifiers, IF amplifiers, gain and buffer stages through 2 GHz. The INA-12063 is an excellent choice for use in cellular and cordless telephones, PCS, W/LAN’s, RF modems and other commercial wireless equipment.

ACTIVE

GND 2

INPUT

Figure 9. INA-12063 Schematic.

BIAS

CIRCUIT

TRANSISTOR

FEEDBACK

GND 1

NETWORK

[1]

bias

RF OUTPUT and V

Description

The active bias circuit solves three problems normally encountered with traditional approaches for biasing discrete transistors. First, as an active bias circuit, the emitter of the RF transistor is DC grounded. This permits the collector current to be controlled without the need for resistors and/or bypass capacitors in the emitter that may degrade RF performance.

Second, the internal bias circuit greatly simplifies the design tasks commonly associated with biasing transistors, such as accurately regulating the collector current, allowing for variations in hFE, making a non-intrusive DC connection to the base of the transistor, and stabilizing current over temperature.

And, third, the integrated bias circuit eliminates the cost, parts count, and associated PCB space required for as many as 8 additional DC components.

The integrated bias control circuit is very easy to use. For most applications, the collector current for the RF transistor can be set with a single resistor.

The geometry of the integrated RF transistor is designed to provide an excellent balance between low noise figure, high gain, and good dynamic range while retaining practical impedance matching levels. The operating current is typically in the 1 to 10 mA range.

The integrated RF feedback contains an inductive element in the emitter circuit of the RF transistor. This series feedback

configuration is of the type often implemented in discrete transistor designs for the purpose of improving stability and bringing the optimum noise match at the input of the transistor closer to 50␣ Ω. The result is that for many applications, a simple, series inductor is often all that is needed to adequately match the input of the INA-12063 to 50 Ω.

In contrast to amplifiers that use resistive feedback to achieve broadband 50 Ω input and output matches, the INA-12063 leaves the designer with the flexibility of optimizing performance for a particular frequency band. For example, frequency selective input and output impedance matching circuits can be used to tune for optimum NF, maximum output power, low input VSWR, or to tailor the passband response to eliminate undesirable gain responses.

Setting the Bias Current

The integrated, active bias circuit is a 10:1 current mirror. The current mirror forces the collector current in the RF transistor to be approximately 10 times the current supplied to the I

In normal use, a voltage between +1.5 and +5 volts, is applied to both the Vd and Vc terminals of the INA-12063. Although normally connected to the same supply voltage, it is not necessary that both Vd and Vc be at the same voltage.

The collector current of the RF transistor is then set by injecting a small control current into the I

pin that is approximately

bias

1/10 of the desired collector current.

bias

pin.

U.S. Patent Number 5436595

6-123

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