HP INA-02186-BLK, INA-02184-TR1, INA-02184-BLK, INA-02186-TR1 Datasheet
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02184
INA-02186
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
Circuit (MMIC) feedback amplifiers housed in low cost plastic
packages. They are designed for
narrow or wide bandwidth
commercial applications that
require high gain and low noise IF
or RF amplification.
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 0.8 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
Description
The INA-02184 and INA-02186 are
low-noise silicon bipolar Monolithic Microwave Integrated
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
RFC (Optional)
Package 84
, ISOSAT™-I silicon
MAX
Package 86
V
CC
R
bias
C
block
RF IN RF OUT
4
3
1
2
V
= 5.5 V
d
C
block
5965-9675E
6-96
INA-02184, -02186 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature +150°C
Storage Temperature –65 to 150° C
[2,3,4]
400 mW
[1]
Thermal Resistance
[2]
:
θjc = 90°C/W — INA-02184
θjc = 100° C/W — INA-02186
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 11.1 mW/° C for T
4. Derate at 10 mW/° C for T
= 25°C.
CASE
144°C for INA-02184.
for INA-02186.
>
C
> 110° C
C
INA-02184, -02186 Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
∆G
f
3 dB
P
Power Gain (|S21|2) f = 0.5 GHz dB 29.0 31.0 29.0 31.0
Gain Flatness f = 0.01 to 1.0 GHz dB ±2.0 ± 2.0
P
3 dB Bandwidth
[2]
[1]
, T
= 25° C
A
= 50 Ω Units Min. Typ. Max. Min. Typ. Max.
O
INA-02184 INA-02186
GH z 0.8 0.8
ISO Reverse Isolation (|S12|2) f = 0.01 to 1.0 GHz dB 39 39
VSWR
Input VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.5 2.0
Output VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.7 1.7
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11 11
Third Order Intercept Point f = 0.5 GHz dBm 23 23
Group Delay f = 0.5 GHz psec 330 350
Device Voltage V 4.0 5.5 7.0 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient mV/°C +10 +10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (G
).
P
INA-02184, -02186 Part Number Ordering Information
Part Number No. of Devices Container
INA-02184-TR1 1000 7" Reel
INA-02184-BLK 100 Antistatic Bag
INA-02186-TR1 1000 7" Reel
INA-02186-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-97
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