HP HSDL-4220, HSDL-4230 Datasheet
High-Performance T-13/4 (5 mm)
TS AlGaAs Infrared (875 nm)
Lamp
H
Technical Data
Features
• Very High Power TS AlGaAs
Technology
• 875 nm Wavelength
• T-13/4 Package
• Low Cost
• Very High Intensity:
HSDL-4220 - 38 mW/sr
HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
HSDL-4220 - 30°
HSDL-4230 - 17°
• Low Forward Voltage for
Series Operation
• High Speed: 40 ns Rise Times
Package Dimensions
8.70 ± 0.20
(0.343 ± 0.008)
1.27
NOM.
(0.050)
(0.228 ± 0.008)
(0.045 ± 0.008)
31.4
MIN.
(1.23)
5.80 ± 0.20
1.14 ± 0.20
• Copper Leadframe for
Improved Thermal and
Optical Characteristics
Applications
• Compatible with IrDA SIR
Standard
• IR Audio
• IR Telephones
• High Speed IR
Communications
IR LANs
IR Modems
IR Dongles
• Industrial IR Equipment
5.00 ± 0.20
(0.197 ± 0.008)
2.35
MAX.
(0.093)
0.70
MAX.
(0.028)
CATHODE
0.50 ± 0.10
(0.020 ± 0.004)
2.54
(0.100)
SQUARE
CATHODE
NOM.
HSDL-4200 Series
HSDL-4220 30°
HSDL-4230 17°
• IR Portable Instruments
• Interfaces with Crystal
Semiconductor CS8130
Infrared Transceiver
Description
The HSDL-4200 series of emitters
are the first in a sequence of
emitters that are aimed at high
power, low forward voltage, and
high speed. These emitters utilize
the Transparent Substrate, double
heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED
technology. These devices are
optimized for speed and efficiency
at emission wavelengths of 875
nm. This material produces high
radiant efficiency over a wide
range of currents up to 500 mA
peak current. The HSDL-4200
series of emitters are available in
a choice of viewing angles, the
HSDL-4230 at 17° and the
HSDL-4220 at 30°. Both lamps
are packaged in clear T-13/4
(5 mm) packages.
4-48
5964-9642E
The package design of these
emitters is optimized for efficient
power dissipation. Copper
leadframes are used to obtain
better thermal performance than
The wide angle emitter, HSDL4220, is compatible with the IrDA
SIR standard and can be used
with the HSDL-1000 integrated
SIR transceiver.
the traditional steel leadframes.
Absolute Maximum Ratings
Parameter Symbol Min Max Unit Reference
Peak Forward Current I
Average Forward Current I
DC Forward Current I
Power Dissipation P
Reverse Voltage (IR = 100 µA) V
Transient Forward Current (10 µs Pulse) I
Operating Temperature T
Storage Temperature T
LED Junction Temperature T
FPK
FAVG
FDC
DISS
R
FTR
O
S
J
5V
070°C
-20 85 °C
Lead Soldering Temperature 260 for °C
[1.6 mm (0.063 in.) from body] 5 seconds
500 mA [2], Fig. 2b
100 mA [2]
100 mA [1], Fig. 2a
260 mW
1.0 A [3]
110 °C
Duty Factor = 20%
Pulse Width = 100 µs
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
the wire bonds.
Electrical Characteristics at 25°C
Parameter Symbol Min Typ Max Unit Condition Reference
Forward Voltage V
F
Forward Voltage ∆V/∆T -2.1 mV/°CI
Temperature Coefficient -2.1 I
Series Resistance R
Diode Capacitance C
Reverse Voltage V
Thermal Resistance, Rθ
S
O
R
jp
Junction to Pin
1.30 1.50 1.70 V I
1.40 1.67 1.85 I
2.15 I
2.8 ohms I
FDC
= 100 mA
FDC
= 250 mA Fig. 2b
FPK
FDC
= 100 mA
FDC
= 100 mA
FDC
40 pF 0 V, 1 MHz
520 V I
= 100 µA
R
110 °C/W
= 50 mA Fig. 2a
= 50 mA Fig. 2c
4-49
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