HP HSDL-4220, HSDL-4230 Datasheet

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
H
Technical Data

Features

• Very High Power TS AlGaAs Technology
• 875 nm Wavelength
• T-13/4 Package
• Low Cost
• Very High Intensity:
HSDL-4220 - 38 mW/sr HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
HSDL-4220 - 30° HSDL-4230 - 17°
• Low Forward Voltage for Series Operation
• High Speed: 40 ns Rise Times

Package Dimensions

8.70 ± 0.20
(0.343 ± 0.008)
1.27
NOM.
(0.050)
(0.228 ± 0.008)
(0.045 ± 0.008)
31.4
MIN.
(1.23)
5.80 ± 0.20
1.14 ± 0.20
• Copper Leadframe for Improved Thermal and Optical Characteristics

Applications

• Compatible with IrDA SIR Standard
• IR Audio
• IR Telephones
• High Speed IR Communications
IR LANs IR Modems IR Dongles
• Industrial IR Equipment
5.00 ± 0.20
(0.197 ± 0.008)
2.35
MAX.
(0.093)
0.70
MAX.
(0.028)
CATHODE
0.50 ± 0.10
(0.020 ± 0.004)
2.54
(0.100)
SQUARE
CATHODE
NOM.
HSDL-4220 30° HSDL-4230 17°
• IR Portable Instruments
• Interfaces with Crystal Semiconductor CS8130 Infrared Transceiver

Description

The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gal­lium Arsenide (TS AlGaAs) LED technology. These devices are optimized for speed and efficiency at emission wavelengths of 875 nm. This material produces high radiant efficiency over a wide range of currents up to 500 mA peak current. The HSDL-4200 series of emitters are available in a choice of viewing angles, the HSDL-4230 at 17° and the HSDL-4220 at 30°. Both lamps are packaged in clear T-13/4 (5 mm) packages.
4-48
5964-9642E
The package design of these emitters is optimized for efficient power dissipation. Copper leadframes are used to obtain better thermal performance than
The wide angle emitter, HSDL­4220, is compatible with the IrDA SIR standard and can be used with the HSDL-1000 integrated SIR transceiver.
the traditional steel leadframes.

Absolute Maximum Ratings

Parameter Symbol Min Max Unit Reference
Peak Forward Current I
Average Forward Current I DC Forward Current I Power Dissipation P Reverse Voltage (IR = 100 µA) V Transient Forward Current (10 µs Pulse) I Operating Temperature T Storage Temperature T LED Junction Temperature T
FPK
FAVG
FDC
DISS
R
FTR
O
S
J
5V
070°C
-20 85 °C
Lead Soldering Temperature 260 for °C [1.6 mm (0.063 in.) from body] 5 seconds
500 mA [2], Fig. 2b
100 mA [2] 100 mA [1], Fig. 2a 260 mW
1.0 A [3]
110 °C
Duty Factor = 20%
Pulse Width = 100 µs
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and the wire bonds.

Electrical Characteristics at 25°C

Parameter Symbol Min Typ Max Unit Condition Reference
Forward Voltage V
F
Forward Voltage V/T -2.1 mV/°CI Temperature Coefficient -2.1 I
Series Resistance R Diode Capacitance C Reverse Voltage V Thermal Resistance, Rθ
S
O
R
jp
Junction to Pin
1.30 1.50 1.70 V I
1.40 1.67 1.85 I
2.15 I
2.8 ohms I
FDC
= 100 mA
FDC
= 250 mA Fig. 2b
FPK
FDC
= 100 mA
FDC
= 100 mA
FDC
40 pF 0 V, 1 MHz
520 V I
= 100 µA
R
110 °C/W
= 50 mA Fig. 2a
= 50 mA Fig. 2c
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