• Low Power Consumption
(60␣ mA in Transmit Mode,
39 mA in Receive Mode
Typical)
• 2 dBm Typical Transmit
Power at 1900 MHz
• Half-Frequency VCO with
Frequency Doubler
• 32/33 Dual-Modulus
Prescaler
• Flexible Chip Biasing,
Including Standby Mode
• TQFP-32 Surface Mount
Package
• Operation to 2.5 GHz
• Use with Companion
HPMX-5002 IF chip
Applications
• DECT, UPCS and ISM Band
Handsets and Basestations
Functional Block Diagram
RX IF OUT
Plastic TQFP-32 Package
General Description
The HPMX-5001 Upconverter/
Downconverter provides RF
H
HPMX-5001
YYWW
XXXX ZZZ
system designers with all of the
necessary features to perform an
RF-to-IF downconversion for a
receive path, as well as an IF-toRF upconversion for transmit
mode.
Designed to meet the unique
needs of portable applications,
Pin Configuration
the HPMX-5001 combines the
qualities of flexible chip biasing,
32
1
H
HPMX-5001
YYWW
XXXX ZZZ
817
916
25
24
low power consumption, and true
2.7 V minimum supply voltage
operation to provide superior
performance and battery life. By
incorporating the active elements
of the VCO on-chip, as well as a
32/33 dual-modulus prescaler,
overall system component count
and costs are decreased. The
32-TQFP package insures that
this high level of integration
occupies a small amount of
POWER DOWN
CONTROL
printed circuit board space.
RX RF IN
TX RF OUT
5965-9105E
X2
32/33
TX IF INPRESCALER
OUT
7-90
EXT.
VCO
TANK
RATIO
SELECT
The HPMX-5001 can be used in
either dual-conversion systems
(with the HPMX-5002 IF
Demodulator/Modulator) or
single-conversion systems. The
HPMX-5001 is manufactured
using Hewlett-Packard’s HP-25
Silicon Bipolar Process with
25␣ GHz fT and 30 GHz f
Max
.
HPMX-5001 Absolute Maximum Ratings
[1]
ParameterMin.Max.
VCC Supply Voltage-0.2 V8 V
Voltage at Any Pin
Power Dissipation
1. Operation of this device in excess of
any of these parameters may cause
permanent damage.
2. T
= 25°C.
CASE
3. Derate at 10 mW/°C for T
4. Except CMOS logic inputs–see
Summary Characterization Information
table.
[2]
CASE
:
>90°C.
HPMX-5001 Guaranteed Electrical Specifications
Unless otherwise noted, all parameters are guaranteed under the following conditions: VCC = 3.0 V. Test
results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical
values are for VCC = 3.0 V, TA = 25°C.
SymbolParameters and Test ConditionsUnitsMin.Typ.Max.
G
P
out
I
CC
V
DIV
Notes:
1. 50 Ω RF source, 100 MHz < IF < 300 MHz, 1.89 GHz RF. There is a 750 Ω resistor on chip between RXIF and RXIFB (pins 3 and 4). A
matching network from 750 Ω to 50 Ω is used for this measurement. Insertion loss of the matching network is included in the net
conversion gain figure. See Figure 28.
2. Signal injected into P3 in Figure 28 is -12.5 dBm.
3. DIV output AC coupled into a 2 kΩ || 10 pF load. See test board schematic diagram, Figure 28.
Receive Conversion Gain
C
Transmitter Power OutputInput
Device Supply CurrentTransmit ModemA6480
DIV Single-Ended Swing
[1]
[2]
d B1214
2:1 output VSWRdBm02
Receive ModemA4354
Synth ModemA1519
Standby Mode (with DIVMC Set High)µA150
[3]
V
PP
0.71
7-91
HPMX-5001 Summary Characterization Information
Typical values measured on test board shown in Figure 28 at VCC = 3.0 V, TA = 25°C, RXIF = 110.592 MHz,
TXRF = 1.89 GHz, unless otherwise noted.
SymbolParameters and Test ConditionsUnitsTypical
V
IH
V
IL
I
IH
IILCMOS Input Low CurrentµA> -300
t
s
t
h
t
pd
Receive Mode1.89 GHz2.45 GHz
GcReceive Conversion Gain
NFNoise Figure
I
IP3
I
P1dB
VSWR
in
Transmit Mode
PIM
3
O
P1dB
VSWR
out
F
IFIF 3 dB BandwidthMHz500500
3dB
Synth Mode
CMOS Input High Voltage (Can Be PulledV≥ V
up as High as VCC + 7 V)
[1]
CMOS Input Low VoltageV≤ V
CC
CC
- 0.8
- 1.9
CMOS Input High CurrentµA< 10
[4]
[2,8]
[2,8]
[3]
[2,8]
[9]
ns4
ns0
ns< 7
µs< 1
dB1413.5
dB1010
DIVMC Setup Time
DIVMC Hold Time
DIV Propagation Delay
Mode Switching Time
Input Third Order Intercept PointdBm-8-9
Input 1 dB Gain Compression PointdBm-18-18
LO Leakage (2 x f
Input VSWR
[6]
[5]
Power Output Level for >35 dB IM3 Suppression
) at IF PortdBm-57—
VCO
1.3:11.3:1
[10]
dBm—-5
Output 1 dB Gain Compression PointdBm00
Output VSWR1.8:11.8:1
LO Suppression (2 x f
Transmitter C/N @ 2 x f
1LO Frequency Range
)d B c2530
VCO
VCO
[7]
+ 4 MHz
[11]
dBc/Hz+137+134
MH z750-1200
Notes:
1. All CMOS logic inputs are internally pulled up to logic high level.
2. See Figure 2 for detailed timing diagram.
3. Between any two different biasing modes. This switching time does not include PLL lock-up time.
4. Single sideband noise figure.
5. In modes other than receive, the VSWR may be as high as 10:1.
6. Single-ended 50 Ω RF load, 300 Ω series IF terminations (600 Ω differential), 100 MHz < IF < 300 MHz, 1.89 GHz RF.
7. The LO is followed by a frequency doubler which raises the LO range to 1500-2400 MHz.
8. DIV output AC coupled into a 2 kΩ || 10 pF load. See test diagram, Figure 28.
9. 50 Ω RF source, 110 MHz < IF < 300 MHz, 1.89 GHz or 2.45 GHz RF. There is a 750 Ω resistor on chip between RXIF and RXIFB
(pins 3 and 4). A matching network from 750 Ω to 50␣ Ω is used for this measurement. Insertion loss of the matching network is
included in the net conversion gain figure.
10. PIM3 is the maximum SSB output power for at least 35 dB IM3 spur suppression.
11. Measured at saturated output power for 1.89 GHz. Measured at -5 dBm SSB output power for 2.45␣ GHz.
7-92
Table 1 - HPMX-5001 Pin Description
No.MnemonicI/O Type Description
1TXCTRLCMOS I/PControls biasing of transmit mixer, amplifiers, and doubler
3RXIFBAnalog O/PInverted single-ended downconverted receiver output,
normally tied to VCC (internal 750 Ω resistor connects to RXIF)
filter (internal 750 Ω resistor connects to RXIFB)
5TXIFAnalog I/PTransmit non-inverting IF input
6TXIFBAnalog I/PTransmit inverting IF input
7LNAREFAnalog DC I/PReference input for receive input amplifier
8RXRFAnalog I/PReceive RF input
10TXRXVCCDC SupplySupply voltage for transmit path, receive front-end and mixer
11, 15TXRXGNDGroundGround for transmit path, receive front-end and mixer
12TXRFBAnalog O/PInverting output of transmit path (see test diagram for
matching network)
14TXRFAnalog O/PNon-inverting output of transmit path (see test diagram for
matching network)
16DBLVCCDC SupplySupply voltage for LO frequency doubler
17DBLGNDGroundGround for LO frequency doubler
20VCOTNKSAnalog I/PSense line from external tank circuit to on-chip VCO amplifier
21VCOTNKFAnalog O/PForce line from on-chip VCO amplifier to external tank circuit
22VCOVCCDC SupplySupply voltage for on-chip VCO amplifier
23VCOGNDGroundGround for on-chip VCO amplifier
26DIVVCCDC SupplySupply voltage for 32/33 dual-modulus prescaler
27DIVGNDGroundGround for 32/33 dual-modulus prescaler
28DIVAnalog O/POutput from 32/33 dual-modulus prescaler
30DIVMCCMOS I/PModulus control signal for 32/33 dual-modulus prescaler
31LOCTRLCMOS I/PControls biasing for VCO and 32/33 dual modulus prescaler
32RXCTRLCMOS I/PControls biasing for receive mixer, amplifiers, and doubler
2, 9, 13,VSUBGroundSubstrate bias voltage
18, 19, 24,
25, 29
Table 2 - HPMX-5001 Mode Control
(CMOS Logic Levels - all pins internally pulled up to high level)