HIT 2SK2978 Datasheet
Features
• Low on-resistance
R
= 0.09Ω typ. (VGS = 4 V, ID = 1.5 A)
DS(on)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
2SK2978
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-659B (Z)
3rd. Edition
Jun 1998
G
UPAK
1
2
3
D
4
1. Gate
2. Drain
3. Source
4. Drain
S
2SK2978
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 1.5A, VDS = 10V
Input capacitance Ciss — 260 — pF VDS = 10V
Output capacitance Coss — 150 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
4. Marking is “ZY”
20——V I
±10——V I
——10µAVDS = 20 V, VGS = 0
——±10 µAVGS = ±8V, VDS = 0
0.5 — 1.5 V ID = 1mA, VDS = 10V
— 0.09 0.12 Ω ID = 1.5A, VGS = 4V
— 0.12 0.20 Ω ID = 1.5A, VGS = 2.5V
— 15 — ns VGS = 4V, ID = 1.5A
— 70 — ns RL = 6.67Ω
—55—ns
—70—ns
— 0.9 — V IF = 2.5A, VGS = 0
— 75 — ns IF = 2.5A, VGS = 0
20 V
±10 V
2.5 A
5A
2.5 A
1W
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note3
Note3
Note3
2
Main Characteristics
2SK2978
Power vs. Temperature Derating
2.0
Test condition :
When using the alumina ceramic
board (12.5 x 20 x 0.7 mm)
1.5
1.0
0.5
Channel Dissipation Pch (W)
0
10 V
5
4
D
3
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5 V
3 V
2.5 V
Pulse Test
2 V
Maximum Safe Operation Area
10
3
D
1
0.3
Operation in
this area is
0.1
limited by R
Drain Current I (A)
0.03
Ta = 25 °C
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
5
4
D
3
PW = 10 ms (1 shot)
DC Operation
DS(on)
10 µs
100 µs
1 ms
V = 10 V
Pulse Test
DS
DS
2
Drain Current I (A)
1
0
246810
Drain to Source Voltage V (V)
V = 1.5 V
GS
DS
2
75°C
Drain Current I (A)
1
0
12345
Gate to Source Voltage V (V)
25°C
Tc = –25°C
GS
3
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