HIT 2SK2959 Datasheet
Features
e
• Low on-resistance
R
= 7mΩ typ.
DS(on)
• 4V gate drive devices.
• High speed switching
Outline
2SK2959
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-569C (Z)
4th. Edition
Aug 1998
TO–220AB
G
D
1
2
S
1. Gate
2. Drain(Flang
3. Source
3
2SK2959
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs|2545—S ID = 25A, VDS = 10V
Input capacitance Ciss — 2000 — pF VDS = 10V
Output capacitance Coss — 1500 — pF VGS = 0
Reverse transfer capacitance Crss — 350 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
30——V I
±20——V I
——10µAVDS = 30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
1.0 — 2.0 V ID = 1mA, VDS = 10V
— 7.0 10 mΩ ID = 25A, VGS = 10V
—1218mΩID = 25A, VGS = 4V
— 20 — ns VGS = 10V, ID = 25A
— 330 — ns RL = 0.4Ω
— 190 — ns
— 190 — ns
— 0.95 — V IF = 50A, VGS = 0
— 60 — ns IF = 50A, VGS = 0
30 V
±20 V
50 A
200 A
50 A
75 W
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note3
Note3
Note3
2
Main Characteristics
2SK2959
100
Power vs. Temperature Derating
75
50
25
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10 V
50
5 V
4 V
40
D
3.5 V
30
Pulse Test
3 V
1000
Maximum Safe Operation Area
300
100
D
30
10
Operation in
3
this area is
Drain Current I (A)
limited by R
1
0.3
Ta = 25°C
0.1
0.1 0.3 1
Drain to Source Voltage V (V)
Typical Transfer Characteristics
50
V = 10 V
DS
Pulse Test
40
D
30
10 µs
PW = 10 ms (1 shot)
DC Operation
(Tc = 25°C)
DS(on)
100 µs
1 ms
3
10
DS
30
100
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
2.5 V
V = 2 V
GS
DS
20
75°C
Drain Current I (A)
10
0
12345
Gate to Source Voltage V (V)
25°C
Tc = –25°C
GS
3
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