The MCF523x is a family of highly-integrated 32-bit
microcontrollers based on the V2 ColdFire
microarchitecture. Featuring a 16 or 32 channel eTPU,
64 Kbytes of internal SRAM, a 2-bank SDRAM
controller, four 32-bit timers with dedicated DMA, a 4
channel DMA controller, up to 2 CAN modules, 3
UARTs and a queued SPI, the MCF523x family has been
designed for general purpose industrial control
applications. It is also a high-performance upgrade for
users of the MC68332. This document provides an
overview of the MCF523x microcontroller family, as
well as detailed descriptions of the mechanical and
electrical characteristics of the devices.
The MCF523x family is based on the Version 2 ColdFire
reduced instruction set computing (RISC)
microarchitecture operating at a core frequency of up to
150 MHz and bus frequency up to 75 MHz.
ColdFire V2 Core with EMAC
(Enhanced Multiply-Accumulate
Unit)
Enhanced Time Processor Unit
with memory (eTPU)
System Clockup to 150 MHz
Performance (Dhrystone/2.1 MIPS)up to 144
Instruction/Data Cache8 Kbytes
Static RAM (SRAM)64 Kbytes
Interrupt Controllers (INTC)2222
Edge Port Module (EPORT)xxxx
External Interface Module (EIM)xxxx
4-channel Direct-Memory Access
(DMA)
SDRAM Controllerxxxx
Fast Ethernet Controller (FEC)——xx
Cryptography - Security module for
data packets processing
Watchdog Timer (WDT)xxxx
xxxx
16-ch
6K
xxxx
——— x
32-ch
6K
16-ch
6K
32-ch
6K
Four Periodic Interrupt Timers (PIT)xxxx
32-bit DMA Timers4444
QSPIxxxx
UART(s)3333
2
Cxxxx
I
FlexCAN 2.0B - Controller-Area
Network communication module
General Purpose I/O Module
(GPIO)
JTAG - IEEE 1149.1 Test Access
Por t
Package160 QFP
1212
xxxx
xxxx
196
MAPBGA
256
MAPBGA
256
MAPBGA
256
MAPBGA
2Block Diagram
The superset device in the MCF523x family comes in a 256 mold array process ball grid array (MAPBGA)
package. Figure shows a top-level block diagram of the MCF5235, the superset device.
This section describes signals that connect off chip, including a table of signal properties. For a more
detailed discussion of the MCF523x signals, consult the MCF5235 Reference Manual (MCF5235RM).
4.1Signal Properties
Table 2 lists all of the signals grouped by function. The “Dir” column is the direction for the primary
function of the pin. Refer to Section 6, “Mechanicals/Pinouts and Part Numbers,” for package diagrams.
NOTE
In this table and throughout this document a single signal within a group is
designated without square brackets (i.e., A24), while designations for
multiple signals within a group use brackets (i.e., A[23:21]) and is meant to
include all signals within the two bracketed numbers when these numbers
are separated by a colon.
NOTE
The primary functionality of a pin is not necessarily its default functionality.
Pins that are muxed with GPIO will default to their GPIO functionality.
Table 2. MCF523x Signal Information and Muxing (continued)
Design Recommendations
MCF5232
Signal NameGPIOAlternate 1 Alternate 2 Dir.
TEST———I18F5J4J4J4
PLL_TEST———I—R14R14R14
VDDPLL———I87M13P15
VSSPLL———I84L14R15
OVDD———I1, 9, 17, 32,
VSS———I8, 16, 25, 31,
1
160
QFP
Test
Power Supplies
41, 55, 62,
69, 81, 90,
95, 105, 114,
128, 132,
138, 146
40, 54, 61,
67, 80, 88,
94, 104, 113,
127, 131,
137, 145,
153, 160
MCF5232
196
MAPBGA
E5, E7,
E10, F7, F9,
G6, G8, H7,
H8, H9, J6,
J8, J10, K5,
K6, K8
A1, A14,
E6, E9, F6,
F8, F10,
G7, G9, H6,
J5, J7, J9,
K7, P1, P14
MCF5233
256
MAPBGA
E6:11, F5, F7:10, F12, G5, G6, G11,
G12, H5, H6, H11, H12, J5, J6, J11,
J12, K5, K6, K11, K12, L5, L7:10,
A1, A16, E5, E12, F6, F11, F16,
G7:10, H7: 10, J1, J7:10, K7:10, L6,
L11, M5, M12, N16, T1, T6, T16
MCF5234
256
MAPBGA
L12, M6:M11
MCF5235
256
MAPBGA
VDD———I15, 53, 103,
144
1
Refers to pin’s primary function. All pins which are configurable for GPIO have a pullup enabled in GPIO mode with the exception
of PBUSCTL[7], PBUSCTL[4:0], PADDR, PBS, PSDRAM.
2
If JTAG_EN is asserted, these pins default to Alternate 1 (JTAG) functionality. The GPIO module is not responsible for assigning
these pins.
D6, F11,
G4, L4
A8, G16, H1, T5
5Design Recommendations
5.1Layout
•Use a 4-layer printed circuit board with the VDD and GND pins connected directly to the power
and ground planes for the MCF523x.
•See application note AN1259, System Design and Layout Techniques for Noise Reduction in Processor-Based Systems.
•Match the PC layout trace width and routing to match trace length to operating frequency and board
impedance. Add termination (series or therein) to the traces to dampen reflections. Increase the
PCB impedance (if possible) keeping the trace lengths balanced and short. Then do cross-talk
analysis to separate traces with significant parallelism or are otherwise "noisy". Use 6 mils trace
and separation. Clocks get extra separation and more precise balancing.
•33µF, 0.1 µF, and 0.01 µF across each power supply
5.2.1Supply Voltage Sequencing and Separation Cautions
Figure 1 shows situations in sequencing the I/O VDD (OVDD), PLL VDD (PLLVDD), and Core VDD (VDD).
OVDD is specified relative to VDD.
OV
3.3V
Supplies Stable
2.5V
DD
1.5V
DC Power Supply Voltage
0
Notes:
1.
2.
3.
4.
Figure 1. Supply Voltage Sequencing and Separation Cautions
1
2
VDD should not exceed OVDD or PLLVDD by more than 0.4 V
at any time, including power-up.
Recommended that VDD/PLLVDD should track OVDD up to
0.9 V, then separate for completion of ramps.
Input voltage must not be greater than the supply voltage (OVDD,
VDD, or PLLVDD) by more than 0.5 V at any time, including during power-up.
Use 1 ms or slower rise time for all supplies.
VDD, PLLV
DD
Time
5.2.1.1Power Up Sequence
If OVDD are powered up with VDD at 0 V, then the sense circuits in the I/O pads will cause all pad output
drivers connected to the OV
powers up before V
must powered up. VDD should not lead the OVDD or PLLVDD by more than 0.4 V
DD
during power ramp-up, or there will be high current in the internal ESD protection diodes. The rise times
on the power supplies should be slower than 1 µs to avoid turning on the internal ESD protection clamp
diodes.
to be in a high impedance state. There is no limit on how long after OVDD
DD
The recommended power up sequence is as follows:
1. Use 1 µs or slower rise time for all supplies.
2. V
/PLLVDD and OVDD should track up to 0.9 V, then separate for the completion of ramps with
DD
OV
going to the higher external voltages. One way to accomplish this is to use a low drop-out
If VDD/PLLVDD are powered down first, then sense circuits in the I/O pads will cause all output drivers to
be in a high impedance state. There is no limit on how long after VDD and PLLVDD power down before
OV
power down or there will be undesired high current in the ESD protection diodes. There are no
requirements for the fall times of the power supplies.
The recommended power down sequence is as follows:
must power down. VDD should not lag OVDD or PLLVDD going low by more than 0.4 V during
DD
1. Drop V
/PLLVDD to 0 V.
DD
2. Drop OVDD supplies.
5.3Decoupling
•Place the decoupling caps as close to the pins as possible, but they can be outside the footprint of
the package.
•0.1 µF and 0.01 µF at each supply input
5.4Buffering
•Use bus buffers on all data/address lines for all off-board accesses and for all on-board accesses
when excessive loading is expected. See Section 7, “Preliminary Electrical Characteristics.”
5.5Pull-up Recommendations
•Use external pull-up resistors on unused inputs. See pin table.
5.6Clocking Recommendations
•Use a multi-layer board with a separate ground plane.
•Place the crystal and all other associated components as close to the EXTAL and XTAL (oscillator
pins) as possible.
•Do not run a high frequency trace around crystal circuit.
•Ensure that the ground for the bypass capacitors is connected to a solid ground trace.
•Tie the ground trace to the ground pin nearest EXTAL and XTAL. This prevents large loop currents
in the vicinity of the crystal.
•Tie the ground pin to the most solid ground in the system.
•Do not connect the trace that connects the oscillator and the ground plane to any other circuit
element. This tends to make the oscillator unstable.
•Tie XTAL to ground when an external oscillator is clocking the device.
5.7.1.1SDRAM Controller Signals in Synchronous Mode
Table 3 shows the behavior of SDRAM signals in synchronous mode.
Table 3. Synchronous DRAM Signal Connections
SignalDescription
SD_SRAS
SD_SCAS
DRAMW
SD_CS
SD_CKE Synchronous DRAM clock enable. Connected directly to the CKE (clock enable) signal of
BS
CLKOUTBus clock output. Connects to the CLK input of SDRAMs.
Synchronous row address strobe. Indicates a valid SDRAM row address is present and can be
latched by the SDRAM. SD_SRAS should be connected to the corresponding SDRAM
SD_SRAS
be interfaced to the SDRAM SD_SRAS signals.
Synchronous column address strobe. Indicates a valid column address is present and can be
latched by the SDRAM. SD_SCAS
SD_SCAS on the SDRAM.
DRAM read/write. Asserted for write operations and negated for read operations.
[1:0]Row address strobe. Select each memory block of SDRAMs connected to the MCF523x. One
SD_CS signal selects one SDRAM block and connects to the corresponding CS signals.
SDRAMs. Enables and disables the clock internal to SDRAM. When CKE is low, memory can
enter a power-down mode where operations are suspended or they can enter self-refresh mode.
SD_CKE functionality is controlled by DCR[COC]. For designs using external multiplexing,
setting COC allows SD_CKE to provide command-bit functionality.
[3:0] Column address strobe. For synchronous operation, BS[3:0] function as byte enables to the
SDRAMs. They connect to the DQM signals (or mask qualifiers) of the SDRAMs.
. Do not confuse SD_SRAS with the DRAM controller’s SD_CS[1:0], which should not
should be connected to the corresponding signal labeled
5.7.1.2Address Multiplexing
See the SDRAM controller module chapter in the MCF5235 Reference Manual for details on address
multiplexing.
5.7.2Ethernet PHY Transceiver Connection
The FEC supports both an MII interface for 10/100 Mbps Ethernet and a seven-wire serial interface for 10
Mbps Ethernet. The interface mode is selected by R_CNTRL[MII_MODE]. In MII mode, the 802.3
standard defines and the FEC module supports 18 signals. These are shown in Table 4.
The serial mode interface operates in what is generally referred to as AMD mode. The MCF523x
configuration for seven-wire serial mode connections to the external transceiver are shown in Table 5.
Table 5. Seven-Wire Mode Configuration
Signal DescriptionMCF523x Pin
Transmit clockETXCLK
Transmit enableETXEN
Transmit dataETXD[0]
CollisionECOL
Receive clockERXCLK
Receive enableERXDV
Receive dataERXD[0]
Unused, configure as PB14ERXER
Unused input, tie to groundECRS
Unused, configure as PB[13:11]ERXD[3:1]
Unused output, ignoreETXER
Unused, configure as PB[10:8]ETXD[3:1]
Unused, configure as PB15EMDC
Input after reset, connect to groundEMDIO
Refer to the M523xEVB evaluation board user’s manual for an example of how to connect an external
PHY. Schematics for this board are accessible at the MCF5235 site by navigating to:
The FlexCAN module interface to the CAN bus is composed of 2 pins: CANTX and CANRX, which are
the serial transmitted data and the serial received data. The use of an external CAN transceiver to interface
to the CAN bus is generally required. The transceiver is capable of driving the large current needed for the
CAN bus and has current protection, against a defective CAN bus or defective stations.
5.7.4BDM
Use the BDM interface as shown in the M523xEVB evaluation board user’s manual. The schematics for
this board are accessible at the Freescale website at: http://www.freescale.com/coldfire.
6Mechanicals/Pinouts and Part Numbers
This section contains drawings showing the pinout and the packaging and mechanical characteristics of
the MCF523x devices. See Table 2 for a list the signal names and pin locations for each device.
6.1Pinout—196 MAPBGA
The following figure shows a pinout of the MCF5232CVMxxx package.
1. DIMENSIONING AND TOLERINCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER
T
3. DATUM PLAN -H- IS LOCATED AT BOTTOM OF
R
Q
LEAD AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
BOTTOM OF THE PARTING LINE.
×
4. DATUMS -A-, -B-, AND -D- TO BE DETERMINED AT
DATUM PLANE -H-.
5. DIMENSIONS S AND V TO BE DETERMINED AT
SEATING PLANE -C-.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS 0.25
(0.010) PER SIDE. DIMENSIONS A AND B DO
INCLUDE MOLD MISMATCH AND ARE DETERMINED
AT DATUM PLANE -H-.
7. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT.
This chapter contains electrical specification tables and reference timing diagrams for the MCF5235
microcontroller unit. This section contains detailed information on power considerations, DC/AC
electrical characteristics, and AC timing specifications of MCF5235.
The electrical specifications are preliminary and are from previous designs or design simulations. These
specifications may not be fully tested or guaranteed at this early stage of the product life cycle, however
for production silicon these specifications will be met. Finalized specifications will be published after
complete characterization and device qualifications have been completed.
NOTE
The parameters specified in this processor document supersede any values
found in the module specifications.
Instantaneous Maximum Current
Single pin limit (applies to all pins)
3,4,5
Operating Temperature Range (Packaged)T
I
D
A
25mA
– 40 to 85°C
(TL - TH)
Storage Temperature RangeT
1
Functional operating conditions are given in DC Electrical Specifications. Absolute Maximum
stg
– 65 to 150°C
Ratings are stress ratings only, and functional operation at the maxima is not guaranteed.
Continued operation at these levels may affect device reliability or cause permanent damage
to the device.
2
This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid application of
any voltages higher than maximum-rated voltages to this high-impedance circuit. Reliability of
operation is enhanced if unused inputs are tied to an appropriate logic voltage level (e.g.,
either V
3
Input must be current limited to the value specified. To determine the value of the required
or OVDD).
SS
current-limiting resistor, calculate resistance values for positive and negative clamp voltages,
then use the larger of the two values.
4
All functional non-supply pins are internally clamped to VSS and OVDD.
5
Power supply must maintain regulation within operating OVDD range during instantaneous
and operating maximum current conditions. If positive injection current (V
than IDD, the injection current may flow out of OV
and could result in external power supply
DD
> OVDD) is greater
in
going out of regulation. Insure external OVDD load will shunt current greater than maximum
injection current. This will be the greatest risk when the processor is not consuming power
(ex; no clock).Power supply must maintain regulation within operating OV
range during
DD
instantaneous and operating maximum current conditions.
7.2Thermal Characteristics
The below table lists thermal resistance values.
CharacteristicSymbol
Junction to ambient, natural convectionFour layer board (2s2p)θ
Junction to ambient (@200 ft/min)Four layer board (2s2p)θ
Junction to boardθ
Junction to caseθ
Junction to top of packageΨ
Maximum operating junction temperatureT
1
θ
and Ψjt parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale
JMA
recommends the use of θ
and power dissipation specifications in the system design to prevent device junction
JmA
temperatures from exceeding the rated specification. System designers should be aware that device junction
temperatures can be significantly influenced by board layout and surrounding devices. Conformance to the device
junction temperature specification can be verified by physical measurement in the customer’s system using the Ψ
parameter, the device power dissipation, and the method described in EIA/JESD Standard 51-2.
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
4
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
5
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written in conformance with Psi-JT.
6
At 100MHz.
The average chip-junction temperature (TJ) in °C can be obtained from:
= Power Dissipation on Input and Output Pins — User Determined
I/O
is neglected) is:
I/O
< P
and can be ignored. An approximate relationship between PD
INT
PDKTJ273° C+()÷=
(2)
Solving equations 1 and 2 for K gives:
2
K = PD × (TA + 273 °C) + Θ
JMA
× P
(3)
D
where K is a constant pertaining to the particular part. K can be determined from equation (3)
by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and
TJ can be obtained by solving equations (1) and (2) iteratively for any value of TA.
Table 9. DC Electrical Specifications1 (continued)
CharacteristicSymbolMinTypicalMaxUnit
Output High Voltage (All input/output and all output pins)
= –5.0 mA
I
OH
Output Low Voltage (All input/output and all output pins)
I
= 5.0mA
OL
Weak Internal Pull Up Device Current, tested at V
Input Capacitance
3
Max.
IL
2
All input-only pins
All input/output (three-state) pins
Load Capacitance
4
Low drive strength
High drive strength
Core Operating Supply Current
5
Master Mode
Pad Operating Supply Current
Master Mode
Low Power Modes
DC Injection Current
V
NEGCLAMP
3, 6, 7, 8
=VSS– 0.3 V, V
POSCLAMP
= VDD + 0.3
Single Pin Limit
Total processor Limit, Includes sum of all stressed pins
1
Refer to Table 10 for additional PLL specifications.
2
Refer to the MCF5235 signals section for pins having weak internal pull-up devices.
3
This parameter is characterized before qualification rather than 100% tested.
4
pF load ratings are based on DC loading and are provided as an indication of driver strength. High speed interfaces require
V
V
I
APU
C
I
OI
C
DD
I
OH
OL
DD
IC
OV
- 0.5——V
DD
——0.5V
–10—– 130µA
in
—
—
L
—
—
—
7
7
25
50
—135150mA
—
—
–1.0
–10
100
TBD
—
—
1.0
10
transmission line analysis to determine proper drive strength and termination. See High Speed Signal Propagation:
Advanced Black Magic by Howard W. Johnson for design guidelines.
5
Current measured at maximum system clock frequency, all modules active, and default drive strength with matching load.
6
All functional non-supply pins are internally clamped to VSS and their respective VDD.
7
Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
8
Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If positive injection current (V
> VDD) is greater than IDD, the injection current may flow out of V
in
and could
DD
result in external power supply going out of regulation. Insure external VDD load will shunt current greater than maximum
injection current. This will be the greatest risk when the processor is not consuming power. Examples are: if no system
clock is present, or if clock rate is very low which would reduce overall power consumption. Also, at power-up, system clock
is not present during the power-up sequence until the PLL has attained lock.
This specification applies to the period required for the PLL to relock after changing the MFD frequency
control bits in the synthesizer control register (SYNCR).
8
Assuming a reference is available at power up, lock time is measured from the time VDD and V
valid to RSTOUT
crystal start up time must be added to the PLL lock time to determine the total start-up time.
9
t
= (64 * 4 * 5 + 5 × τ) × T
lpll
τ = 1.57x10
10
PLL is operating in 1:1 PLL mode.
11
Jitter is the average deviation from the programmed frequency measured over the specified interval at
maximum f
stable external clock signal. Noise injected into the PLL circuitry via V
crystal oscillator frequency increase the Cjitter percentage for a given interval.
12
Values are with frequency modulation disabled. If frequency modulation is enabled, jitter is the sum of
Cjitter+Cmod.
13
Modulation percentage applies over an interval of 10µs, or equivalently the modulation rate is 100KHz.
14
Modulation rate selected must not result in f
Modulation range determined by hardware design.
15
f
= f
sys/2
ico
negating. If the crystal oscillator is being used as the reference for the PLL, then the
, where T
-6
× 2(MFD + 2).
. Measurements are made with the device powered by filtered supplies and clocked by a
sys/2
RFD
/ (2 * 2
ref
)
ref
= 1/F
sys/2
ref_crystal
= 1/F
value greater than the f
ref_ext
= 1/F
DDSYN
7.5External Interface Timing Characteristics
Table 11 lists processor bus input timings.
NOTE
All processor bus timings are synchronous; that is, input setup/hold and
output delay with respect to the rising edge of a reference clock. The
reference clock is the CLKOUT output.
, and
ref_1:1
and V
maximum specified value.
sys/2
and variation in
SSSYN
DDSYN
are
All other timing relationships can be derived from these values.
Table 11. Processor Bus Input Timing Specifications
NameCharacteristic
1
freqSystem bus frequency f
B0CLKOUT periodt
Control Inputs
B1aControl input valid to CLKOUT high
B1b BKPT
B2a
B2b
valid to CLKOUT high
CLKOUT high to control inputs invalid
CLKOUT high to asynchronous control input BKPT invalid
2
3
2
3
Data Inputs
B4
Data input (D[31:0]) valid to CLKOUT hight
B5
CLKOUT high to data input (D[31:0]) invalidt
1
Timing specifications are tested using full drive strength pad configurations in a 50ohm transmission line
environment..
2
TEA and TA pins are being referred to as control inputs.
3
Refer to figure A-19.
SymbolMinMax Unit
sys/2
cyc
t
CVCH
t
BKVCH
t
CHCII
t
BKNCH
DIVCH
CHDII
5075MHz
—1/75ns
9—ns
9—ns
0—ns
0—ns
4—ns
0—ns
Timings listed in Table 11 are shown in Figure 10 & Figure A-3.
Table 16 lists specifications for the I2C input timing parameters shown in Figure 18.
Table 16. I2C Input Timing Specifications between I2C_SCL and I2C_SDA
NumCharacteristicMinMaxUnits
I1Start condition hold time2—t
I2Clock low period8—t
I3I2C_SCL/I2C_SDA rise time (VIL= 0.5 V to VIH= 2.4 V)—1ms
I4Data hold time0—ns
I5I2C_SCL/I2C_SDA fall time (VIH= 2.4 V to VIL= 0.5 V)—1ms
I6Clock high time4—t
I7Data setup time0—ns
I8Start condition setup time (for repeated start condition only)2—t
I9Stop condition setup time2—t
Table 17 lists specifications for the I2C output timing parameters shown in Figure 18.
1
2
3
Tabl e 17. I2C Output Timing Specifications between I2C_SCL and I2C_SDA
NumCharacteristicMinMaxUnits
1
I1
I2 1Clock low period10—t
I3
I4
I5
I6
I7 1Data setup time2—t
I8 1Start condition setup time (for repeated start condition only)20—t
I9 1Stop condition setup time10—t
Note: Output numbers depend on the value programmed into the IFDR; an IFDR programmed with
the maximum frequency (IFDR = 0x20) results in minimum output timings as shown in Ta b l e 1 7 . The
I
I2C_SCL low period. The actual position is affected by the prescale and division values programmed
into the IFDR; however, the numbers given in Ta bl e 1 7 are minimum values.
Because I2C_SCL and I2C_SDA are open-collector-type outputs, which the processor can only
actively drive low, the time I2C_SCL or I2C_SDA take to reach a high level depends on external
signal capacitance and pull-up resistor values.
Specified at a nominal 50-pF load.
Start condition hold time6—t
2
I2C_SCL/I2C_SDA rise time (V
1
Data hold time7—t
3
I2C_SCL/I2C_SDA fall time (V
1
Clock high time10—t
2
C interface is designed to scale the actual data transition time to move it to the middle of the
= 0.5 V to VIH= 2.4 V)——µs
IL
= 2.4 V to VIL= 0.5 V)—3ns
IH
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
cyc
Figure 18 shows timing for the values in Table 16 and Table 17.
7.10.2MII Transmit Signal Timing (ETXD[3:0], ETXEN, ETXER, ETXCLK)
Table 19 lists MII transmit channel timings.
The transmitter functions correctly up to a ETXCLK maximum frequency of 25 MHz +1%. The processor
clock frequency must exceed twice the ETXCLK frequency.
Table 19. MII Transmit Signal Timing
NumCharacteristicMinMaxUnit
M5ETXCLK to ETXD[3:0], ETXEN, ETXER invalid5—ns
M6ETXCLK to ETXD[3:0], ETXEN, ETXER valid—25ns
M7ETXCLK pulse width high35%65%ETXCLK period
M8ETXCLK pulse width low35%65%ETXCLK period
Figure 20 shows MII transmit signal timings listed in Table 19.
M7
ETXCLK (input)
M5
ETXD[3:0] (outputs)
ETXEN
ETXER
M6
M8
Figure 20. MII Transmit Signal Timing Diagram
7.10.3MII Async Inputs Signal Timing (ECRS and ECOL)
Table 20 lists MII asynchronous inputs signal timing.
Table 20. MII Async Inputs Signal Timing
NumCharacteristicMinMaxUnit
M9ECRS, ECOL minimum pulse width1.5—ETXCLK period
Figure 21 shows MII asynchronous input timings listed in Table 20.
Documentation regarding the MCF523x and their development support tools is available from a local
Freescale distributor, a Freescale semiconductor sales office, the Freescale Literature Distribution Center,
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9Document Revision History
The below table provides a revision history for this document.
Table 26. Document Revision History
Rev. No.Substantive Change(s)
0Preliminary release.
1 • Updated Signal List table
1.1 • Removed duplicate information in the module description sections. The information is all in the
Signals Description Table.
1.5 • Removed Overview, Features, Modes of Operation, and Address Multiplexing sections. This
information can be found in the MCF5235 Reference Manual.
• Removed list of documentation table in Section 8, “Documentation.”. An up-to-date list is
always available on our web site.
1.6 • Ta bl e 9 : Changed core supply voltage (V
1.7 • Ta bl e 1 0: Changed max f
frequency from “75 MHz” to “150 MHz”.
ICO
) from 1.35-1.65 to 1.4-1.6.
DD
1.8 • Added Section 5.2.1, “Supply Voltage Sequencing and Separation Cautions.”
• Updated 196MAPBGA package dimensions, Figure 3.
2 •Ta b le 2 : Changed SD_CKE pin location from 139 to “—” for the 160QFP device. Changed
QSPI_CS1 pin location from “—” to 139 for the 160QFP device.
• Figure 8: Changed pin 139 label from “SD_CKE/QSPI_CS1” to “QSPI_CS1/SD_CKE”.
• Removed second sentence from Section 7.10.1, “MII Receive Signal Timing (ERXD[3:0],
ERXDV, ERXER, and ERXCLK),” and Section 7.10.2, “MII Transmit Signal Timing (ETXD[3:0],
ETXEN, ETXER, ETXCLK),” regarding no minimum frequency requirement for TXCLK.
• Removed third and fourth paragraphs from Section 7.10.2, “MII Transmit Signal Timing
(ETXD[3:0], ETXEN, ETXER, ETXCLK),” as this feature is not supported on this device.
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Document Number: MCF5235EC
Rev. 2
08/2006
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