Fairchild Semiconductor MMPQ6700 Datasheet
MMPQ6700
B
E
4
B
3
E
3
B
2
E
2
B
1
E
1
C
1
C
SOIC-16
C1 B1 E1 & C2 B2 E
C3 B3 E3 & C4 B4 E
1
TRANSISTTRANSIST
TRANSIST
TRANSISTTRANSIST
4
C
C
2
OR OR
OR
OR OR
MMPQ6700
4
C
C
4
C
3
C
3
2
TYPETYPE
TYPE
TYPETYPE
NPN
2
PNP
4
Quad NPN & PNP General Purpose Amplifier
These complimentary devices can be used in switches with collector currents of 10
µA to 100 mA. These devices are best used when space is the primary consideration.
Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
θ
JA
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base V ol tage 5.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
MMPQ6700
Total Device Dissipation
Derate above 25°C
1000
8.0
mW
mW/°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
125
240
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
Quad NPN & PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 40 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base B reakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
40 V
5.0 V
Collector-Cutoff Current VCB = 30 V, IE = 0 50 nA
Emitter-Cutoff Current VEB = 4.0 V, IC = 0 50 nA
DC Current Gain VCE = 1.0 V, IC = 0.1 mA
= 1.0 V, IC = 1.0 mA
V
CE
= 1.0 V, IC = 10 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.90 V
)
CE
30
50
70
MMPQ6700
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
f
T
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF
Input Capacitance VBE = 0.5 V, f = 1.0 kHz 10 pF
Current-Gain Bandwidth Product IC = 10 mA, VCE = 20 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
200 MHz
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