Fairchild Semiconductor MMPQ2907, MMBT2907A, PN2907A, PZT2907A Datasheet
Discrete POWER & Signal
Technologies
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
PN2907A
C
B
E
TO-92
MMBT2907A
C
SOT-23
Mark: 2F
MMPQ2907
B
E
B
E
B
E
B
E
C
C
C
SOIC-16
C
PNP General Purpose Amplifier
C
C
C
C
E
B
NMT2907
E1
C1
SOT-6
Mark: .2B
C2
PZT2907A
C
SOT-223
E2
B1
B2
B
E
C
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ã 1997 Fairchild Semiconductor Corporation
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
C
°
(BR)
(BR)
(BR)
µ
µ
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
B
I
CEX
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitte r Breakdown Voltage* IC = 10 mA, IB = 060V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Base Cutoff Current VCB = 30 V, V
Collector Cutoff Current VCE = 30 V, V
Collector Cutoff Current VCB = 50 V, IE = 0
= 50 V, IE = 0, TA = 150°C
V
CB
DC Current Gain IC = 0.1 mA, VCE = 10 V
I
= 1.0 mA, VCE = 10 V
C
I
= 10 mA, VCE = 10 V
C
I
= 150 mA, VCE = 10 V*
C
I
= 500 mA, VCE = 10 V*
Collector-Emitte r Saturation Voltage* IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
)
C
= 500 mA, IB = 50 mA
I
C
I
= 500 mA, IB = 50 mA
C
= 0.5 V 50 nA
EB
= 0.5 V 50 nA
BE
60 V
5.0 V
0.02
20
75
100
100
100
300
50
0.4
1.6
1.3
2.6
V
V
V
V
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
A
A
SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907)
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V,
f = 100 MHz
Output Capacitance VCB = 10 V, IE = 0,
f = 100 kHz
Input Capacitance VEB = 2.0 V, IC = 0,
f = 100 kHz
200 MHz
8.0 pF
30 pF
SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907)
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time VCC = 30 V, IC = 150 mA, 45 ns
Delay Time IB1 = 15 mA 10 ns
Rise Time 40 ns
Turn-o ff Time VCC = 6.0 V, IC = 150 mA 100 ns
Storage Time IB1 = IB2 = 15 mA 80 ns
Fall Time 30 ns
*Pulse T est: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=1 15.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
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