Fairchild Semiconductor MMPQ2369, MMBT2369A, PN2369A Datasheet
PN2369A MMPQ2369MMBT2369A
C
E
C
B
E
NPN Switching Transistor
This device is designed for high speed saturation switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
TO-92
SOT-23
Mark: 1S
B
Discrete POWER & Signal
Technologies
B
E
B
E
B
E
B
E
SOIC-16
C
C
C
C
C
C
C
C
PN2369A / MMBT2369A / MMPQ2369
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 15 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN2369A MMBT2369A* MMPQ2369
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total De vice Dissip at i on
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient
357 556
Ef fec t ive 4 D ie
Each Die
225
1.8
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
NPN Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
)
V
sat
BE(
)
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V
Collector-Emitter Breakdown Voltage IC = 10 µA, VBE = 0 40 V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
Colle c tor Cu tof f Cu r ren t VCB = 20 V, IE = 0
= 20 V, IE = 0, TA = 125°C
V
CB
DC Cu r re n t Ga in* IC = 10 mA, VCE = 1.0 V
I
= 10 mA,V
C
= 0.35 V, T
CE
IC = 100 mA, VCE = 2.0 V
Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA
= 10 mA, I
I
C
= 30 mA, IB = 3.0 mA
I
C
= 100 mA, IB = 10 mA
I
C
= 1.0 m A, T
B
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
= 10 mA, I
I
C
= 10 mA, I
I
C
= 30 mA, IB = 3.0 mA
I
C
= 100 mA, IB = 10 mA
I
C
= 1.0 m A, T
B
= 1.0 m A, T
B
= -55°C
A
= 125°C
A
= -55°C
A
= 125°C
A
4.5 V
0.4
30
40
120
20
20
0.2
0.3
0.25
0.5
0.7
0.85
1.02
0.59
1.15
1.6
PN2369A / MMBT2369A / MMPQ2369
µ
A
µ
A
V
V
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
= 2.0 kΩ, f = 100 MHz
R
G
5.0
SWITCHING CHARACTERISTICS (except MMPQ2369)
t
s
t
on
t
off
St or age Tim e IB1 = IB2 = IC = 10 mA 13 ns
Turn-On Time VCC = 3.0 V, IC = 10 mA,
= 3.0 mA
I
B1
Turn-Off Time VCC = 3.0 V, IC = 10 mA,
= 3.0 m A, IB2 = 1.5 mA
I
B1
12 ns
18 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
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