Fairchild Semiconductor MMPQ2222A Datasheet
Discrete POWER & Signal
Technologies
FFB2222A / FMB2222A / MMPQ2222A
FFB2222A
E2
B2
C1
E1
B1
pin #1
SC70-6
Mark: .1P
C2
FMB2222A
C2
E1
C1
E2
B1
pin #1
SuperSOT-6
Mark: .1P
B2
MMPQ2222A
B4
E4
B3
E3
B2
E2
B1
E1
C3
C2
C2
C1
SOIC-16
C1
C3
C4
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings* T
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 75 V
Emitter-Base V ol tage 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
= 25°C unless otherwise noted
A
°C
C4
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FFB2222A FMB2222A MMPQ2222A
P
D
R
θ
JA
1998 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
300
2.4
700
5.6
415 180
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
I
BL
Collector-Emitt er Breakdown
IC = 10 mA, IB = 0 40 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current V
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
= 60 V, V
CE
Collector Cutoff Current VCB = 60 V, I
= 60 V, I
V
CB
Emitter Cutoff Current VEB = 3.0 V, I
Base Cutoff Current VCE = 60 V, V
75 V
6.0 V
= 3.0 V 10 nA
EB(OFF)
= 0
E
= 0, TA = 125°C
E
= 0 10 nA
C
= 3.0 V 20 nA
EB(OFF)
0.01
10
µA
µA
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
DC Current Gain IC = 0.1 mA, VCE = 10 V
= 1.0 mA, VCE = 10 V
I
C
= 10 mA, VCE = 10 V
I
C
= 10 mA,VCE= 10 V,TA= -55°C
I
C
= 150 mA, VCE = 10 V*
I
C
= 150 mA, VCE = 1.0 V*
I
C
= 500 mA, VCE = 10 V*
I
Collector-Emitter S at uration Voltage* IC = 150 mA, IB = 15 mA
)
Base-Emitter S aturation Voltage* IC = 150 mA, IB = 1.0 mA
)
C
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
35
50
75
35
100
300
50
40
0.3
1.0
0.6 1.2
2.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure
Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V,
Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 30 V, V
Rise Time IC = 150 mA, IB1 = 15 mA 20 ns
Storage Time VCC = 30 V, IC = 150 mA, 180 ns
Fall Time IB1 = IB2 = 15 mA 40 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
I
= 100 µA, V
C
= 1.0 kΩ, f = 1.0 kHz
R
S
CE
BE(OFF)
300 MHz
= 10 V,
2.0 dB
= 0.5 V, 8 ns
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