Fairchild Semiconductor MMBTA64, MPSA64, PZTA64 Datasheet
Discrete POWER & Signal
Technologies
MMBTA64MPSA64 PZTA64
MPSA64 / MMBTA64 / PZTA64
C
E
C
B
E
TO-92
SOT-23
Mark: 2V
B
C
C
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA64 *MMBTA64 **PZTA64
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 125
625
5.0
350
2.8
2
1,000
8.0
.
mW
mW/°C
C/W
°
C/W
°
A64, Rev A
(BR)
PNP Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CES
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitte r Breakdown Voltage
I
= 100 µA, IB = 0
C
30 V
Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA
Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA
DC Current Gain IC = 10 mA, VCE = 5.0 V
I
= 100 mA, VCE = 5.0 V
Collector-Emitter Saturation Volta g e IC = 100 mA, IB = 0.1 mA 1.5 V
)
C
10,000
20,000
Base-Em itter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,
125 MHz
f = 100 MHz
MPSA64 / MMBTA64 / PZTA64
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Cu rrent
50
V = 5V
40
30
20
10
FE
h - TYPICAL PULSED CURRENT G AIN (K)
CE
125 °C
25 °C
- 40 °C
0
0.01 0.1 1
I - COLLECTOR CURREN T (A)
C
Collector-Emitter Satur ation
Voltage vs Collector Current
1.6
= 1000
β
1.2
- 40 ºC
0.8
0.4
0
0.001 0.01 0.1 1
CESAT
V - COLLECTOR EMITTER VOLTA GE (V)
I - COLLECTOR CURRENT (A)
C
25 °C
125 ºC
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