Fairchild Semiconductor KSH41CI Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
KSH41C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 100 V
V
CEO
Collector-Emitter Voltage 100 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 6 A
I
CP
Collector Current (Pulse) 10 A
I
B
Base Current 2 A
PC
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
a
=25°C) 1.75 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
I
CEO
Collector Cut-off Current V
CE
= 60V, IB = 0 50 µA
I
CES
Collector Cut-off Current VCE = 100V, V
BE
= 0 10 uA
I
EBO
Emitter Cut-off Current V
BE
= 5V, IC = 0 0.5 mA
hFE
* DC Current Gain VCE = 4V , IC = 0.3A
V
CE
= 4V, IC = 3A
30
15 75
V
CE
(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 6A, IC = 4A 2 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 500mA 3 MHz
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2002 Fairchild Semiconductor Corporation
KSH41C
Rev. A4, October 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.01 0.1 1 10
1
10
100
1000
VCE = 2V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
C
ob
[pF], CAPACITANC E
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.01
0.1
1
10
t
R
VCC = 30V
IC = 10.I
B
tD. VBE(off)=5V
t
R
, t
D
[
µ
s], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
t
STG
t
F
t
F
, t
STG
[
µ
s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
5ms
100
µ
s
500
µ
s
1ms
DC
ICP(max)
IC(max)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Loading...