Fairchild Semiconductor KSH41C Datasheet
KSH41C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH41C
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PC
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
Collector Current (Pulse) 10 A
Base Current 2 A
Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (T
=25°C) 1.75 W
a
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
CEO
I
CEO
I
CES
I
EBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V
V
CE
(on) * Base-Emitter On Voltage V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Collector Cut-off Current VCE = 100V, V
Emitter Cut-off Current V
= 60V, IB = 0 50 µA
CE
= 5V, IC = 0 0.5 mA
BE
BE
* DC Current Gain VCE = 4V , IC = 0.3A
V
= 4V, IC = 3A
CE
= 6A, IC = 4A 2 V
CE
Current Gain Bandwidth Product V
= 10V, IC = 500mA 3 MHz
CE
= 0 10 uA
30
15 75
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH41C
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITAN CE
ob
C
VCE = 2V
VCE(sat)
IC = 10 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
s], TURN ON TIME
µ
[
0.1
D
, t
R
t
tD. VBE(off)=5V
VCC = 30V
IC = 10.I
B
t
R
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance Figure 4. Turn On Time
10
1
s], TURN OFF TIME
µ
[
0.1
STG
, t
F
t
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
100
ICP(max)
t
STG
t
F
10
IC(max)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
100
µ
s
500
µ
s
1ms
5ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A4, October 2002
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