Fairchild Semiconductor KSH340 Datasheet
KSH340
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH340
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage 300 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 3 V
Collector Current (DC) 0.5 A
Collector Current (Pulse) 0.75 A
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector Emitter Sustaining Voltage IC = 1mA, IB = 0 300 V
CEO
I
CEO
I
EBO
h
FE
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
=25°C) 1.56 W
a
TC=25°C unless otherwise noted
= 300V, IE =0 0.1 mA
CB
= 3V, IC = 0 0.1 mA
EB
= 10V, IC = 50mA 30 240
CE
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
Typical Characteristics
KSH340
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
ICP(max)
IC(max)
100
10
[mA], COLLECTOR CURRENT
C
I
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
500
µ
s
µ
1ms
s
DC
VCE = 10V
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
10 100 1000
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
24
21
18
15
12
9
6
[W], POWER DISSIPATION
C
P
3
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
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